2SD596 Search Results

2SD596

Abstract: D1298 SSA250 transistor dv4
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD596 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM ENSIO NS The 2SD596 is designed for use in small type equipments especially recom­ mended for hybrid integrated circuit and other applications.

2SB624

Abstract: 2SB624BV3 2SB624-BV4 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV5 2SD596 2SB624BV2 2SB624BV4
Contextual Info: 2SB624 -0.7A , -30V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES   High DC Current Gain. hFE：200 Typ. (VCE= -1V, IC= -100mA) Complimentary to 2SD596

BV4 pnp

Abstract: BV4 transistor 2SB624 2SD596
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SD596

Contextual Info: RECTRON 2SD596 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.7 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range

2SD596

Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SD596 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 0.4 3 Features 1 0.55 High dc current gain. hFE:200TYP. VCE=1V, IC=100mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 TRANSISTOR（NPN ） ＳＯＴ－２３－３ Ｌ FEATURES １．ＢＡＳＥ ２．ＥＭＩＴＴＥＲ Power dissipation PCM : 0.2 W（Tamb=25℃）

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 TRANSISTOR NPN SOT-23-3L FEATURES 1. BASE Power dissipation 2. EMITTER W (Tamb=25℃) 3. COLLECTOR 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.7

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB624

Abstract: 2SD596 BV4 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 SOT-23-3L TRANSISTOR PNP FEATURES 1.BASE High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB624

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.

sot-23 bv4

Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.

hFE-200 transistor PNP

Abstract: 2SB624
Contextual Info: 2SB624 SOT-23 Transistor PNP SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features — High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

D1802

Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)

transistor DV3

Abstract: 2sd 596 2sd59
Contextual Info: S IL IC O N T R A N S IS T O R 2SD596 A U D IO FREQ U ENCY PO W ER A M P L IF IE R N P N S IL IC O N E P IT A X IA L T R A N S IS T O R M IN I M O L D D E S C R IP T IO N PACKAGE DIMENSIONS The 2 S D 5 9 6 is designed for use in small type equipm ents especially recom ­

2SD1810

Abstract: 2SD1111 2SD1694 2SC1280A 2SC3565 2SC4350 2SC4574 2SC2618 2SC3145 2SC4210
Contextual Info: 250 - £ m tt T y p e No. £ Manuf. = ft SANYO M SE TOSHIBA B H □— A 2SC4210 2SD596 □— A 2SC4209 2SD780A 2SD 1782K □— A 2SC42Q9 2SD 1783 □— A y 2 S D 1784 X 2SC3145 2SD686 2SD1627 2SD1784 2 S D 1785 X 2SD n _Jj, OC1M 1 C 0 a —A 2 SC 4 4 8 5

mg30g1bl3

Abstract: 2SD472 MG30GIBL3 2SC2603 2SD610 2SC3170 2SC1815 2sc2238 2SC2603 F 2sd882 hitachi
Contextual Info: - 218 - m « Type No. 2SD 602 , 2SD 605 j 2SD 606 2SD 608 rJ 610 612 612K 613 ✓ 614 617 / 2SD 619 2SD 620 2SD 622 2SD 628H 2S0 623 2SD 632 2SD 633 2SD 634 637 638 639 641 643 644 3 2SC3330 2SC1815 2SD776 S £ -y-y'ry v-ytr > = 8 2SD596 B aZ HITACHI 2SC2618

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current 0.7 A ICM: Collector-base voltage

transistor dv4

Abstract: 2SD596 10MHZ 2SB624
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 SOT-23-3L TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: Transistors IC SMD Type Product specification 2SD596 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 0.4 3 Features 1 0.55 High dc current gain. hFE:200TYP. VCE=1V, IC=100mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

2SB624

Abstract: 2SD596 F50450
Contextual Info: NEC Aj Silico n T ra n s is to r m+Tixrx 2SD596 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-ÏÏÆ/ PACKAGE DIMENSIONS Unit:mm ««/FEA TU RES o m J 'B f t - B T t b ’I , ' ^ 7 " U -y K IC ffl t i r m & T t . 2 .8 ± 0 .2 Oh p £ [ wj ^ H p £ - 200 TYP. (V(;£ —1.0 V, Ic~100 rnA)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 SOT-23 TRANSISTOR PNP FEATURES 1.BASE 2.EMITTER 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SB624

Abstract: 2SD596 marking ll
Contextual Info: NEC Silicon T ran sisto r S ïf/ \ T 7 2SB624 P N P i t f f + S s T J U M S s y □> h # it 9 K w m ' , W V ' J v K IC ffl > L - riftilT - T o o h FE* fÎ 5 ^ 0 hpE : 200 T Y P . V 2 .8 ± 0.2 1.5 = - 1 .0 V , I c = -100 mA) c e O 2SD596 t =i > 7 °'l 9 > 9 'J T t o

transistor dv4

Abstract: transistor DV3 2SD596 SOT23-3L
Contextual Info: 2SD596 SOT-23-3L Transistor NPN SOT-23-3L 1.BASE 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features — — 2.80 1.60 High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter