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JRH ELECTRONICS DW-40-12-S-D-595 STACKING BOARD CONNECTOR, DW SER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DW-40-12-S-D-595	Bulk			1	1 $83.45 10 $83.45 100 $83.45 1000 $83.45 10000 $83.45	Buy Now
Samtec Inc DW-40-12-S-D-595 CONN HDR 80POS 0.1 STACK T/H Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DW-40-12-S-D-595	Bulk			1	1 $18.01 10 $18.01 100 $18.01 1000 $18.01 10000 $18.01	Buy Now
Avnet Americas	DW-40-12-S-D-595	Bulk		111 Weeks	1	1 $14.2394 10 $13.87425 100 $9.9648 1000 $9.9648 10000 $9.9648	Buy Now
Newark	DW-40-12-S-D-595	Bulk			1	1 $16.73 10 $15.49 100 $11.91 1000 $10.9 10000 $10.9	Buy Now
Sager	DW-40-12-S-D-595		65		1	1 $14.53 10 $14.23 100 $10.38 1000 $8.69 10000 $8.69	Buy Now
Samtec Inc DW-05-12-S-D-590 FLEXIBLE BOARD STACKING HEADER W Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DW-05-12-S-D-590	Bulk			1	1 $6.16 10 $6.16 100 $6.16 1000 $6.16 10000 $6.16	Buy Now
Master Electronics	DW-05-12-S-D-590					1 - 10 $2.442 100 $1.984 1000 $1.4 10000 $0.948	Buy Now
Samtec Inc DW-25-12-S-D-590 CONN HDR 50POS 0.1 STACK T/H Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DW-25-12-S-D-590	Bulk			1	1 $11.72 10 $11.72 100 $11.72 1000 $11.72 10000 $11.72	Buy Now
Avnet Americas	DW-25-12-S-D-590	Bulk		111 Weeks	1	1 $9.3982 10 $8.99925 100 $6.2208 1000 $6.2208 10000 $6.2208	Buy Now
Newark	DW-25-12-S-D-590	Bulk			1	1 $10.94 10 $9.92 100 $8.27 1000 $6.61 10000 $6.61	Buy Now
Master Electronics	DW-25-12-S-D-590					1 - 10 $9.62 100 $7.25 1000 $4.49 10000 $4.49	Buy Now
Sager	DW-25-12-S-D-590		305		1	1 $9.59 10 $9.23 100 $6.48 1000 $5.43 10000 $5.43	Buy Now
JRH ELECTRONICS DW-25-12-S-D-590 STACKING BOARD CONNECTOR, DW SER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DW-25-12-S-D-590	Bulk			1	1 $55.04 10 $55.04 100 $55.04 1000 $55.04 10000 $55.04	Buy Now

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2SD59 Datasheets (133)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SD59	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	43.86KB	1
2SD59	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	80.62KB	1
2SD59	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	166.47KB	1
2SD59	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	31.43KB	1
2SD59	Unknown	Cross Reference Datasheet	Scan	PDF	38.73KB	1
2SD59	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	30.29KB	1
2SD59	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	88.33KB	1
2SD59	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	104.33KB	2
2SD59	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	38.95KB	1
2SD590	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	25.99KB	1
2SD590	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	79.16KB	1
2SD590	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	161.83KB	1
2SD590	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	165.77KB	1
2SD590	Unknown	Cross Reference Datasheet	Scan	PDF	37.7KB	1

2SD590	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	141.18KB	1
2SD590	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	104.34KB	2
2SD590	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	41.77KB	1
2SD591	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	25.99KB	1
2SD591	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	79.16KB	1
2SD591	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	33.11KB	1

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2SD59 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SD596 Abstract: D1298 SSA250 transistor dv4 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD596 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM ENSIO NS The 2SD596 is designed for use in small type equipments especially recom mended for hybrid integrated circuit and other applications.	OCR Scan	2SD596 2SD596 D1298 SSA250 transistor dv4	PDF
2SB624 Abstract: 2SB624BV3 2SB624-BV4 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV5 2SD596 2SB624BV2 2SB624BV4 Contextual Info: 2SB624 -0.7A , -30V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES   High DC Current Gain. hFE：200 Typ. (VCE= -1V, IC= -100mA) Complimentary to 2SD596	Original	2SB624 OT-23 hFE200 -100mA) 2SD596 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV4 2SB624-BV5 2SB624 2SB624BV3 2SB624-BV4 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV5 2SD596 2SB624BV2 2SB624BV4	PDF
BV4 pnp Abstract: BV4 transistor 2SB624 2SD596 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 2SB624 OT-23 -100mA) 2SD596. -100mA -700mA -70mA -10mA BV4 pnp BV4 transistor 2SB624 2SD596	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	OT-23 2SD596 OT-23 2SB624 100mA 700mA 700mA, 10MHZ	PDF
2SB621A Abstract: 2SB621 2SD592 2SD592A Contextual Info: 2SD592,A SILICON TRANSISTORS TO-92 2SB621,A P N P & 2SD592,A (NPN) are complementary silicon planar epitaxial transistors designed for AF output amplifiers. •»I ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emittter-Base Voltage	OCR Scan	2SD592 2SB621 2SD592A 2SB621A 750mW /2SD592 2SB621A	PDF
2SB0621 Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A Contextual Info: Transistor 2SB0621, 2SB0621A 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0592 (2SD592) and 2SD0592A (2SD592A) Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). High transition frequency fT.	Original	2SB0621, 2SB0621A 2SB621, 2SB621A) 2SD0592 2SD592) 2SD0592A 2SD592A) 2SB0621 2SB0621 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A	PDF
2SD596 Contextual Info: RECTRON 2SD596 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.7 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range	Original	2SD596 OT-23 OT-23 MIL-STD-202E 2SD596	PDF
2SD596 Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SD596 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 0.4 3 Features 1 0.55 High dc current gain. hFE:200TYP. VCE=1V, IC=100mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1	Original	2SD596 OT-23 200TYP. 100mA) 2SD596	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 TRANSISTOR（NPN ）ＳＯＴ－２３－３Ｌ FEATURES １．ＢＡＳＥ２．ＥＭＩＴＴＥＲ Power dissipation PCM : 0.2 W（Tamb=25℃）	Original	OT-23-3L 2SD596 037TPY 950TPY 700REF 028REF	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 TRANSISTOR NPN SOT-23-3L FEATURES 1. BASE Power dissipation 2. EMITTER W (Tamb=25℃) 3. COLLECTOR 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.7	Original	OT-23-3L 2SD596 OT-23-3L 100mA 700mA	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 2SD596 OT-23 100mA) 2SB624 100mA 700mA 700mA, 10MHZ	PDF
2SB624 Abstract: 2SD596 BV4 transistor Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 SOT-23-3L TRANSISTOR PNP FEATURES 1.BASE High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23-3L 2SB624 OT-23-3L -100mA) 2SD596. -100mA -700mA -700mA, -70mA -10mA 2SB624 2SD596 BV4 transistor	PDF
2SD592 Abstract: 2SD592A transistor 2SD592a 2SB621 2SB621A Contextual Info: Transistor 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB621 and 2SB621A Unit: mm 5.0±0.2 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE sat . • Absolute Maximum Ratings	Original	2SD592, 2SD592A 2SB621 2SB621A 2SD592 2SD592 2SD592A transistor 2SD592a 2SB621A	PDF
2SB624 Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.	Original	2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 2SB624	PDF

2SB621 Abstract: 2SB621A 2SD592 2SD592A Contextual Info: Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE sat . High transition frequency fT. • Absolute Maximum Ratings	Original	2SB621, 2SB621A 2SD592 2SD592A 2SB621 2SB621 2SB621A 2SD592A	PDF
sot-23 bv4 Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4 Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.	Original	2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 sot-23 bv4 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4	PDF
hFE-200 transistor PNP Abstract: 2SB624 Contextual Info: 2SB624 SOT-23 Transistor PNP SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	2SB624 OT-23 OT-23 -100mA) 2SD596. -700mA -70mA -10mA -100A, hFE-200 transistor PNP 2SB624	PDF
2SB0621 Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A Contextual Info: Transistor 2SD0592, 2SD0592A 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB0621 (2SB621) and 2SB0621A (2SB621A) Unit: mm 5.0±0.2 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat).	Original	2SD0592, 2SD0592A 2SD592, 2SD592A) 2SB0621 2SB621) 2SB0621A 2SB621A) 2SD0592 2SB0621 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A	PDF
D1802 Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)	Original	2SB624A 2SD596A D1802 TRANSISTOR BV3 2SB624A nec marking power amplifier	PDF
2SD596A Abstract: transistor DV3 D1788 2SB624 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)	Original	2SD596A 2SB624 2SD596A transistor DV3 D1788	PDF
transistor DV3 Abstract: 2sd 596 2sd59 Contextual Info: S IL IC O N T R A N S IS T O R 2SD596 A U D IO FREQ U ENCY PO W ER A M P L IF IE R N P N S IL IC O N E P IT A X IA L T R A N S IS T O R M IN I M O L D D E S C R IP T IO N PACKAGE DIMENSIONS The 2 S D 5 9 6 is designed for use in small type equipm ents especially recom	OCR Scan	2SD596 2SD596 transistor DV3 2sd 596 2sd59	PDF
2SD1810 Abstract: 2SD1111 2SD1694 2SC1280A 2SC3565 2SC4350 2SC4574 2SC2618 2SC3145 2SC4210 Contextual Info: 250 - £ m tt T y p e No. £ Manuf. = ft SANYO M SE TOSHIBA B H □— A 2SC4210 2SD596 □— A 2SC4209 2SD780A 2SD 1782K □— A 2SC42Q9 2SD 1783 □— A y 2 S D 1784 X 2SC3145 2SD686 2SD1627 2SD1784 2 S D 1785 X 2SD n _Jj, OC1M 1 C 0 a —A 2 SC 4 4 8 5	OCR Scan	2SC4210 2SD596 2SC2618 2SD1328 2SC4209 2SD780A 1782K 2SC4209 2SD602A 2SD1810 2SD1111 2SD1694 2SC1280A 2SC3565 2SC4350 2SC4574 2SC2618 2SC3145	PDF
mg30g1bl3 Abstract: 2SD472 MG30GIBL3 2SC2603 2SD610 2SC3170 2SC1815 2sc2238 2SC2603 F 2sd882 hitachi Contextual Info: - 218 - m « Type No. 2SD 602 , 2SD 605 j 2SD 606 2SD 608 rJ 610 612 612K 613 ✓ 614 617 / 2SD 619 2SD 620 2SD 622 2SD 628H 2S0 623 2SD 632 2SD 633 2SD 634 637 638 639 641 643 644 3 2SC3330 2SC1815 2SD776 S £ -y-y'ry v-ytr > = 8 2SD596 B aZ HITACHI 2SC2618	OCR Scan	2SD602 2SD602A 2SD603 2SD604 2SD605 2SD606 2SD608 2SD610 2SD612 2SD612K mg30g1bl3 2SD472 MG30GIBL3 2SC2603 2SC3170 2SC1815 2sc2238 2SC2603 F 2sd882 hitachi	PDF
2SB0621A Abstract: 2SB621A 2SD0592A 2SD592A Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C	Original	2002/95/EC) 2SD0592A 2SD592A) 2SB0621A 2SB621A) O-92-B1 2SB0621A 2SB621A 2SD0592A 2SD592A	PDF

2SD59 Search Results

2SD59 Price and Stock

JRH ELECTRONICS DW-40-12-S-D-595

Samtec Inc DW-40-12-S-D-595

Samtec Inc DW-05-12-S-D-590

Samtec Inc DW-25-12-S-D-590

JRH ELECTRONICS DW-25-12-S-D-590

2SD59 Datasheets (133)

2SD59 Datasheets Context Search

2SD596

2SB624

BV4 pnp

2SB621A

2SB0621

2SD596

2SD596

2SB624

2SD592

2SB624

2SB621

sot-23 bv4

hFE-200 transistor PNP

2SB0621

D1802

2SD596A

transistor DV3

2SD1810

mg30g1bl3

2SB0621A