2SD602A Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD602A TRANSISTOR NPN SOT–23 FEATURES  Low Collector to Emitter Saturation Voltage  Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features

2SB710A

Contextual Info: Transistor 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD602 and 2SD602A Unit: mm • Features Collector to 2SB710 emitter voltage 2SB710A –25 –50 VEBO –5 V Peak collector current ICP –1 A Collector current

marking xs

Abstract: Silicon NPN Epitaxial Planar Type 2SD602A
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD602A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Mini type package, allowing downsizing of the equipment and 1 0.55 Low collector to emitter saturation voltage VCE sat . +0.1 1.3-0.1 +0.1 2.4-0.1 0.4

Contextual Info: Transistors 2SB0710 2SB710 , 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2SB0710A Collector-emitter voltage 2SB0710

2SD602

Abstract: WR1 marking code transistor marking wr1 sot-23 WR1 SOT23 2SD602AR 2SD602R marking code WR1 transistor marking wr1 2SD602-S 2SD602AS
Contextual Info: 2SD602 / 2SD602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Low collector to emitter saturation voltage VCE sat A L 3 3 CLASSIFICATION OF hFE (1) C B

2SB0710A

Abstract: 2SB0710 2SB710 2SB710A 2SD0602 2SD0602A 2SD602 2SD602A
Contextual Info: Transistor 2SB0710, 2SB0710A 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0602 (2SD602) and 2SD0602A (2SD602A) Unit: mm • Features Collector to 2SB0710 emitter voltage 2SB0710A –25 –50 VEBO –5 V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0602A (2SD602A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0710A (2SB710A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)

2SB0710A

Abstract: 2SB710A 2SD0602A 2SD602A
Contextual Info: Transistors 2SD0602A 2SD602A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0710A (2SB710A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Low collector-emitter saturation voltage VCE(sat)

2SB0710

Abstract: 2SB0710A 2SB710 2SB710A 2SD0602 2SD0602A 2SD602 2SD602A hfe1
Contextual Info: Transistors 2SB0710 2SB710 , 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2SB0710A Collector-emitter voltage 2SB0710

2SB0710A

Abstract: 2SB710A 2SD0602A 2SD602A
Contextual Info: Transistor 2SD0602A 2SD602A Silicon NPN epitaxial planar type Unit: mm For general amplification Complementary to 2SB0710A (2SB710A) 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Low collector to emitter saturation voltage VCE(sat)

2SD0602A

Abstract: 2SD602A XN04502 XN4502
Contextual Info: Composite Transistors XN04502 XN4502 Silicon NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SD0602A(2SD602A) x 2 elements 0 to 0.1 ●

hFE CLASSIFICATION Marking 24

Abstract: marking DR 2SB0710 2SB0710A marking 25 SC-59 power Transistor hFE CLASSIFICATION Marking CE 2SB710 2SB710A 2SD0602 2SD0602A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features

2SD602

Contextual Info: Transistor 2SD0602, 2SD0602A 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0710 (2SB710) and 2SB0710A (2SB710A) Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d Symbol

2SB710A

Abstract: 2SB0710 2SB0710A 2SB710 2SD0602 2SD0602A 2SD602 2SD602A
Contextual Info: Transistor 2SB0710, 2SB0710A 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0602 (2SD602) and 2SD0602A (2SD602A) Unit: mm 0.40+0.10 ñ0.05 • Absolute Maximum Ratings Parameter 0.4±0.2 2 1 (0.95) (0.95)

2SB0710

Abstract: 2SB0710A 2SB710 2SB710A 2SD0602 2SD0602A 2SD602 2SD602A
Contextual Info: Transistor 2SD0602, 2SD0602A 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0710 (2SB710) and 2SB0710A (2SB710A) Unit: mm • Features 2SD0602 30 VCBO VEBO 5 V Peak collector current ICP 1 A Collector current

2sd649

Abstract: 2SD602 2SB710 2SB710A 2SD602A
Contextual Info: r ~ PANASONIC INDL/ELEKíSEflI} 72C D | b^32ñS4 D O D ^ t a D ^ ^ y V T S P _ 2SD602, 2SD602A 2SD602, 2 S D 6 0 2 A '> ij zq > N P N x + '> 7 JV? \s—±J&/Si N P N E p itax ia l P la n a r —tStiitsffi!/G en era l Amplifier

2SD602

Abstract: 2SB710 2SB710A 2SD602A
Contextual Info: Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB710 and 2SB710A Unit: mm • Features 2SD602 30 VCBO VEBO 5 V ICP 1 A Collector current IC 500 mA Collector power dissipation PC 200 mW Junction temperature

2SB0710A

Abstract: 2SB710A 2SD0602A 2SD602A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0602A (2SD602A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0710A (2SB710A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 2.90+0.20 –0.05 • Absolute Maximum Ratings Ta = 25°C

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC3941A

Abstract: c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737
Contextual Info: - m % tt Type No. € Manuf. 2SC 3718 = * SANYO JK S TOSHIBA fé T 2SC2791 2SC 3720 fé T 0 Sl □-A 2SC3608 2SC 3722 2SC 3723 S± £ 2SC 3724 *± w i 2SC 3725 ^ 2SC 3726 J' =~ = = s s m æ s i à m / m. 2SC 3727 2SC 3728 2SC 37 29 y 2SC 3730 2SC 37 3 ! 2SC 3732

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers