2SJ0672 Search Results

2SJ0672

Abstract: 2SK3539 UP04979
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter

ON4030

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter

Contextual Info: Silicon MOSFETs Small Signal 2SJ0672 Silicon P-channel MOSFET Unit: mm For switching circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5˚ 0.15 min. 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C Rating Unit VDS −30 V Gate-source voltage (Drain open)

2SJ0672

Abstract: 2SK3539 UP04979
Contextual Info: Composite Transistors UP04979 Silicon N-channel MOSFET Tr1 Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter Tr1 Symbol Rating Unit VDSS 50 V Marking Symbol: 4T Gate-source voltage

2SJ0672

Abstract: ON5040
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0672 Silicon P-channel MOSFET Unit: mm For switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 Peak drain current Drain power dissipation Channel temperature

2SJ0672

Abstract: 2SK3539 UP04979
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 For switching • 2SJ0672 + 2SK3539

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 • Features 1 • 2SJ0672 + 2SK3539 ■ Absolute Maximum Ratings Ta = 25°C

2SJ0672

Contextual Info: Silicon MOSFETs Small Signal 2SJ0672 Silicon P-channel MOSFET Unit: mm For switching circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5˚ 0.15 min. 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C Rating Unit VDS −30 V Gate-source voltage (Drain open)

2SJ0672

Abstract: 2SK3539 UP04979
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 For switching • 2SJ0672 + 2SK3539

Contextual Info: Silicon MOSFETs Small Signal 2SJ0672 Silicon P-channel MOSFET Unit: mm For switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 1.20±0.05 0.80±0.05 5˚ M Di ain sc te on na tin nc ue e/ d • Ultra small package switching MOSFETs • SSS-Mini type package, allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0672 Silicon P-channel MOSFET Unit: mm For switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 V Gate-source voltage (Drain open) VGSO Peak drain current IDP

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MS701

Abstract: 2SJ0672 2SK3539G UP04979
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Package  High-speed switching  Incorporating a built-in gate protection-diode

2SJ0672

Abstract: 2SK3539G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Package  High-speed switching  Incorporating a built-in gate protection-diode

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Features  Package  High-speed switching  Incorporating a built-in gate protection-diode

2SJ0672

Abstract: 2SK3539G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Package  High-speed switching  Incorporating a built-in gate protection-diode

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Package  High-speed switching  Incorporating a built-in gate protection-diode