2SK3539 Search Results
2SK3539 Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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2SK3539 |
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TRANS JFET N-CH 50V 0.001MA SMini3-G1 | Original | 64.1KB | 3 | ||
2SK3539 |
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Silicon N-channel MOSFET | Original | 80.97KB | 3 | ||
2SK3539 |
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FETs, IPD, IGBTs, GaAs MMICs | Original | 32.06KB | 1 | ||
2SK353900L |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 50V .1A S-MINI-3P | Original | 3 | |||
2SK3539G0L |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 50V .1A S-MINI-3P | Original | 4 |
2SK3539 Price and Stock
Panasonic Electronic Components 2SK3539G0LMOSFET N-CH 50V 100MA SMINI3-F2 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SK3539G0L | Reel |
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Buy Now | |||||||
Panasonic Electronic Components 2SK353900LMOSFET N-CH 50V 100MA SMINI3-G1 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SK353900L | Reel |
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Buy Now |
2SK3539 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2SJ0672
Abstract: 2SK3539 UP04979
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Original |
2002/95/EC) UP04979 2SJ0672 2SK3539 OD-723 -20lues, 2SJ0672 2SK3539 UP04979 | |
ON4030Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter |
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2002/95/EC) UP04979 2SJ0672 2SK3539 ON4030 | |
2SK3539GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain Th an W is k y |
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2002/95/EC) 2SK3539G 2SK3539G | |
2SJ0672
Abstract: 2SK3539 UP04979
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Original |
UP04979 2SJ0672 2SK3539 OD-723 2SJ0672 2SK3539 UP04979 | |
2SK3539Contextual Info: Silicon MOSFETs Small Signal 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Wide frequency band • Gate protection diode built-in 0.9±0.1 |
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2SK3539 2SK3539 | |
2SJ0672
Abstract: 2SK3539 UP04979
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Original |
2002/95/EC) UP04979 2SJ0672 2SK3539 OD-723 2SJ0672 2SK3539 UP04979 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 • Features 1 • 2SJ0672 + 2SK3539 ■ Absolute Maximum Ratings Ta = 25°C |
Original |
2002/95/EC) UP04979 2SJ0672 2SK3539 OD-723 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • High-speed switching • Wide frequency band • Gate protection diode built-in ■ Absolute Maximum Ratings Ta = 25°C |
Original |
2002/95/EC) 2SK3539G | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚ 2 0.2±0.1 1 2.1±0.1 M Di ain sc te on na tin nc ue e/ d • High-speed switching |
Original |
2002/95/EC) 2SK3539 | |
2SK3539Contextual Info: Silicon MOSFETs Small Signal 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Wide frequency band • Gate-peotection diode built-in 0.9±0.1 |
Original |
2SK3539 2SK3539 | |
2SK3539Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Wide frequency band |
Original |
2002/95/EC) 2SK3539 2SK3539 | |
2SJ0672
Abstract: 2SK3539 UP04979
|
Original |
2002/95/EC) UP04979 2SJ0672 2SK3539 OD-723 2SJ0672 2SK3539 UP04979 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na |
Original |
2002/95/EC) 2SK3539G | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 3 M Di ain sc te on na tin nc ue e/ d 5˚ • High-speed switching |
Original |
2002/95/EC) 2SK3539 SC-70 | |
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2SK3539G
Abstract: YP diode code marking
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Original |
2002/95/EC) 2SK3539G 2SK3539G YP diode code marking | |
2SK3539Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 2 0.2±0.1 1 5˚ ue pl d in an c |
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2002/95/EC) 2SK3539 2SK3539 | |
MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
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Original |
PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent | |
ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
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respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 | |
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
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Original |
responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01878 Silicon N-channel MOSFET Unit: mm +0.05 (0.30) 4 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 1 |
Original |
2002/95/EC) UP01878 2SK3539 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01878 Silicon N-channel MOSFET Unit: mm +0.05 (0.30) 4 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 1 |
Original |
2002/95/EC) UP01878 2SK3539 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04878G Silicon N-channel MOSFET For switching • Features Package Allowing 2.5 V drive Incorporating a built-in gate protection-diode Reduction of the mounting area and assembly cost by one half |
Original |
2002/95/EC) UP04878G 2SK3539G | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04878 Silicon N-channel MOSFET For switching 5 0.12+0.05 –0.02 4 • Features 5˚ • Allowing 2.5 V drive • Incorporating a built-in gate protection-diode • S-Mini type 6-pin package, reduction of the mounting area and |
Original |
2002/95/EC) XP04878 2SK3539 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04878 Silicon N-channel MOSFET For switching 5 0.12+0.05 –0.02 4 • Features 5˚ • Allowing 2.5 V drive • Incorporating a built-in gate protection-diode • S-Mini type 6-pin package, reduction of the mounting area and |
Original |
2002/95/EC) XP04878 2SK3539 |