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Panasonic Electronic Components 2SK11030QL JFET N-CH 20MA MINI3-G1
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2SK1103 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK1103	Panasonic	TRANS JFET N-CH 6A 3MINI3-G1	Original	PDF	75.18KB	3
2SK1103	Panasonic	N-Channel Junction FET	Original	PDF	41.31KB	3
2SK1103	Panasonic	Silicon N-Channel Junction FET	Original	PDF	31.03KB	2
2SK1103	Panasonic	Silicon N-Channel Junction FET	Original	PDF	47.84KB	3
2SK1103	Panasonic	FETs, IPD, IGBTs, GaAs MMICs	Original	PDF	34.02KB	1
2SK1103	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	78.86KB	1
2SK1103	Panasonic	Silicon MOS FETs	Scan	PDF	66.56KB	1
2SK11030QL	Panasonic	JFETs (Junction Field Effect), Discrete Semiconductor Products, JFET N-CH 20MA 150MW MINI-3	Original	PDF		4
2SK1103O	Panasonic	Silicon N-Channel Junction FET	Original	PDF	41.28KB	3
2SK1103O	Panasonic	Silicon N-Channel Junction FET	Original	PDF	47.82KB	3
2SK1103P	Panasonic	TRANS JFET N-CH 1.5A 3MINI3-G1	Original	PDF	75.18KB	3
2SK1103P	Panasonic	Silicon N-Channel Junction FET	Original	PDF	47.82KB	3
2SK1103Q	Panasonic	TRANS JFET N-CH 3A 3MINI3-G1	Original	PDF	75.18KB	3
2SK1103Q	Panasonic	Silicon N-Channel Junction FET	Original	PDF	47.82KB	3

2SK1103R	Panasonic	TRANS JFET N-CH 6A 3MINI3-G1	Original	PDF	75.18KB	3
2SK1103R	Panasonic	Silicon N-Channel Junction FET	Original	PDF	47.82KB	3

2SK1103 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SK1103 Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction Unit : mm For switching Complementary with 2SJ163 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID ±20 mA Gate current IG 10 mA Allowable power dissipation	Original	2SK1103 2SJ163	PDF
analog switching ic Abstract: 2SK1103 UN1213 UNR1213 XN08081 XN8081 Contextual Info: Composite Transistors XN08081 XN8081 Silicon N-channel junction (FET) Silicon NPN epitaxial planer transistor (Tr) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element • 2SK1103 + UNR1213 (UN1213)	Original	XN08081 XN8081) 2SK1103 UNR1213 UN1213) analog switching ic 2SK1103 UN1213 UNR1213 XN08081 XN8081	PDF
2SK1103 Abstract: XN1D873 Contextual Info: Composite Transistors XN1D873 Silicon N-channel junction FET Unit: mm For analog switching +0.2 2.8 -0.3 +0.25 0.65±0.15 +0.1 +0.1 0 to 0.1 2SK1103 x 2 elements • Absolute Maximum Ratings 1 : Gate Tr1 2 : Gate (Tr2) 3 : Source (Tr2) (Ta=25˚C) Parameter	Original	XN1D873 2SK1103 2SK1103 XN1D873	PDF
2SK1103 Abstract: XP1D873 Contextual Info: Composite Transistors XP1D873 Silicon N-channel junction FET Unit: mm 0.2±0.05 For analog switching 2.1±0.1 2.0±0.1 2 5 3 4 0.9± 0.1 • Basic Part Number of Element 2SK1103 x 2 elements 0 to 0.1 ● 0.7±0.1 +0.05 ● 1 0.425 0.12 – 0.02 ● Two elements incorporated into one package.	Original	XP1D873 2SK1103 2SK1103 XP1D873	PDF
2SJ0163 Abstract: 2SJ163 2SK1103 Contextual Info: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation	Original	2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103	PDF
FET121 Abstract: 2SK1103 XN0D873 XN1D873 Contextual Info: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 4 5 1.50+0.25 –0.05 3 1 1.1+0.2 –0.1 10˚ • 2SK1103 x 2 • Absolute Maximum Ratings Ta = 25°C	Original	XN0D873 XN1D873) 2SK1103 SC-74A FET121 2SK1103 XN0D873 XN1D873	PDF
2SJ163 Abstract: 2SK1103 Contextual Info: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS −65 V Drain current ID 20 mA Gate current	Original	2SK1103 2SJ163 2SJ163 2SK1103	PDF
2SK1103 Abstract: UN1213 XP8081 Contextual Info: Composite Transistors XP8081 Silicon N-channel junction FET Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For analog switching (Tr1)/switching (Tr2) 1 6 2 5 3 4 0 to 0.1 2SK1103+UN1213 (transistors with built-in resistor) 0.12 –0.02 0.9±0.1	Original	XP8081 2SK1103 UN1213 UN1213 XP8081	PDF
FET121 Contextual Info: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 4 5 1.50+0.25 –0.05 3 1 • Basic Part Number 0.65±0.15 0.30+0.10 –0.05 10˚ 1.1+0.2 –0.1 • 2SK1103 x 2 Drain current Gate current	Original	XN0D873 XN1D873) 2SK1103 FET121	PDF
Contextual Info: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ0163 (2SJ163) unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 Unit Gate to Drain voltage VGDS −65 V Drain current ID 20 mA Gate current	Original	2SK1103 2SJ0163 2SJ163) O-236 SC-59	PDF
2SJ0163 Abstract: 2SJ163 2SK1103 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET For switching circuits Complementary to 2SK1103 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b	Original	2002/95/EC) 2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103	PDF
Junction-FET Abstract: 2SJ163 2SK1103 Contextual Info: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS −65 V Drain current ID 20 mA Gate current	Original	2SK1103 2SJ163 Junction-FET 2SJ163 2SK1103	PDF
VDSV Abstract: 2SJ163 2SK1103 mini 29 Contextual Info: Silicon Junction FETs Small Signal 2SJ163 Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS 65 V Drain current ID −20	Original	2SJ163 2SK1103 VDSV 2SJ163 2SK1103 mini 29	PDF
2SJ0163 Abstract: 2SJ163 2SK1103 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET M Di ain sc te on na tin nc ue e/ d For switching circuits Complementary to 2SK1103 ue pl d in an c se ed lud	Original	2002/95/EC) 2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103	PDF

2SJ0163 Abstract: 2SK1103 Contextual Info: Silicon Junction FETs Small Signal 2SK1103 Silicon N-channel junction FET Unit: mm For switching circuits Complementary to 2SJ0163 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C Rating Unit VGDS −65 V ID 20 mA	Original	2SK1103 2SJ0163 2SJ0163 2SK1103	PDF
Contextual Info: 2SJ163 Silicon Junction FETs Small Signal 2SJ163 Silicon P-Channel Junction Unit : mm For general use switching Complementary with 2SK1103 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID –20 mA Gate current IG –10	Original	2SJ163 2SK1103	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK1103 Silicon N-channel junction FET For switching circuits Complementary to 2SJ0163 • Package • Low ON resistance • Low-noise characteristics • Code	Original	2002/95/EC) 2SK1103 2SJ0163	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET M Di ain sc te on na tin nc ue e/ d For switching circuits Complementary to 2SK1103 • Package ■ Features	Original	2002/95/EC) 2SJ0163 2SJ163) 2SK1103	PDF
Contextual Info: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation	Original	2SJ0163 2SJ163) 2SK1103 O-236 SC-59	PDF
2SJ0163 Abstract: 2SK1103 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK1103 Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For switching circuits Complementary to 2SJ0163 • Package • Low ON resistance	Original	2002/95/EC) 2SK1103 2SJ0163 2SJ0163 2SK1103	PDF
2SJ0163 Abstract: 2SJ163 2SK1103 Contextual Info: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ0163 (2SJ163) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 1.9±0.1 Unit VGDS −65 V Drain current ID 20 mA Gate current IG 10 mA Allowable power dissipation	Original	2SK1103 2SJ0163 2SJ163) 2SJ0163 2SJ163 2SK1103	PDF
2SJ0163 Abstract: 2SJ163 2SK1103 Contextual Info: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-channel junction FET Unit: mm For switching circuits Complementary to 2SK1103 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C 2.90+0.20 –0.05	Original	2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103	PDF
Junction-FET Abstract: 2SJ0163 2SJ163 2SK1103 Contextual Info: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 3 V Drain current ID −20 mA Gate current	Original	2SJ0163 2SJ163) 2SK1103 Junction-FET 2SJ0163 2SJ163 2SK1103	PDF
2SJ0163 Abstract: 2SJ163 2SK1103 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET For switching circuits Complementary to 2SK1103 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b	Original	2002/95/EC) 2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103	PDF

2SK1103 Search Results

2SK1103 Price and Stock

Panasonic Electronic Components 2SK11030QL

2SK1103 Datasheets (16)

2SK1103 Datasheets Context Search

analog switching ic

2SK1103

2SK1103

2SJ0163

FET121

2SJ163

2SK1103

FET121

2SJ0163

Junction-FET

VDSV

2SJ0163

2SJ0163

2SJ0163

2SJ0163

2SJ0163

Junction-FET

2SJ0163