2SK12 Search Results

2SK1277

Contextual Info: 2SK1277 N-channel MOS-FET F-V Series 250V > Features 0,12Ω 30A 150W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

Contextual Info: 2SK1280 N-channel MOS-FET F-V Series 500V > Features 0,5Ω 18A 150W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

2SK1011

Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M

2SK1293

Abstract: MEI-1202 TEA-1035 AK 1034 TEA1035
Contextual Info: DATA SHEET NEC i MOS FIELD EFFECT POWER TRANSISTOR 2SK1293 À SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1293 is N-channel MOS Field Effect Transistor de­ PACKAGE DIMENSIONS in millimeters signed for solenoid, motor and lamp driver.

2SK1275

Abstract: D0135
Contextual Info: MMTbSGS Q0132Ö4 7Tb • H I T 4 2SK1275SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES # Low On-Resistance # High Speed Switching 1. # Low Drive Current # No Secondary Breakdown # Suitable for Switching Regulator and Gate 2. D ra in 3. Source

2SK1258

Abstract: SC-65
Contextual Info: Power F-MOS FET 2SK1258 2SK1258 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON re sistan c e RDb on : RDS (on) l = 0 . 0 2 i l (typ.) • High sw itching ra te : t( = 350ns (typ.) • No secondary breakdow n Unit: mm 25.5max.

251C

Abstract: 2SK1214 H150
Contextual Info: P ow er F-MOS FET 2SK 1214 2SK1214 Silicon N-channel Power F-M O S FET Package Dimensions • Features • • • • Low ON resistan ce RDS on : RDs (on) l = 0 .0 6 il (typ.) High sw itching rate : tf= 110ns (typ.) No secondary breakdow n Low voltage drive is possible (VGs= 4 V ).

2SK1271

Abstract: MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC iff— 2SK1271 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR r SWITCHING N-CHANNEL POWER MOS FET

Contextual Info: 2SK1299 L , 2SK1299(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SK1273

Abstract: IEI-1213 MEI-1202
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1273 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm

2SK1778

Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
Contextual Info: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247

T0220F

Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
Contextual Info: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)

05815A

Abstract: 500V0 2SK1279 UA3000 MOSFET 500V 15A
Contextual Info: 2SK1279 N-channel MOS-FET F-V Series 500V > Features 0,58Ω 15A 125W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

2SK1228-(TX)

Contextual Info: 2SK1228 Silicon MOS FETs Small Signal 2SK1228 Silicon N-Channel MOS Unit : mm For switching +0.2 2.8 –0.3 +0.25 ● 2.5V drive possible 1.45 Gate-protection diode built-in 1 3 +0.1 ● 0.65±0.15 Gate-Source voltage VGSO 10 V Drain current ID ±50 mA Max drain current

2sk1507

Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M

TT 2158

Contextual Info: 2SK1212-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features • High current • Low orwesistance • No secondary breakdown • Low driving power • Avalanche-proof ■ Applications • DC-DC converters • Motor controllers • Gt neral purpose power amplifier

Contextual Info: Power F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • • • • Low ON resistance Rds on : RDs (on) l = 0.08il (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving (VGs = 4V)

umi 150 5A 250V

Abstract: umi 5A 250V 2SK1221 T0220AB X 25 UMI T0220A
Contextual Info: 2SK1221 FUJI P O W ER M O S-F E T N-CMANNEL SILICON POWER MOS-FET F - II S E R I E S lOutline Drawings • Features • Hich speed sw itching • Low orvresistance • No secondary breakdown • Low driving power • Hiçh voltage • VC5s- ± 3 0V Guarantee

DIODE ku 1490

Abstract: ku 1490 2SK129 2SK1292
Contextual Info: M O S Field E ffe c t P o w e r T ra n s is to r 2SK1292 /< 7 -M O S FET I Ü 2SK1292 i, F E T T", X > h M ' <r7 — MOS • mm 5 ^ X 1&* > J i £ K t \ T - t , X ' f v f v y"#1î ^ firtT i - y, vu-y^K, 7 >7°i0ÆijfiHi-SjüT-fo m # o i& t y M f h r - t o

2SK1249

Abstract: F15W50 MOSFET 500V 15A
Contextual Info: V X v'j- X /\°7-M 0SFET VX Series Power MOSFET 2SK1249 m n m -ta m C ase F15W50] o u t l i n e d im e n s io n s M T O -3P [Unit I mm] 500V 15A K È Z IÉ • A ^ iS M (C is s 2.0 !tflC -e 'D A '-< 7 X R fflA *g M Ô ^ J v ÿ lV , e X ^ ^ r y i^ A jK iS U o

Nec AC 160

Abstract: 2SK1286 MEI-1202 TEA-1035
Contextual Info: DATA SHEET NEC A MOS FIELD EFFECT POWER TRANSISTOR 2SK1286 A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1286 is N-channel MOS Field Effect Transistor de­ PACKAGE DIMENSIONS in millimeters signed for solenoid, motor and lamp driver.

2SK1274

Contextual Info: 5 *"ri DATA . •* t ïnSPî i «',_/; i<»'*'* . l t t, > MOS FIELD EFFECT TRANSISTOR 2SK1274 N-CHANIMEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm The 2SK1274, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V

TRANSISTOR BH RW

Abstract: k1272 fbii 2SK1272 s45l
Contextual Info: • 5 /— h Field E ffe ct P o w e r T ra n sisto r 2SK 1272 ✓<l7 — M O S N 1 - ^ ^ V mJ m O S 2SK1272ÌÌ, FETT", 5 V « ì H S J C Æ tS i^ tlj^ 'n T H b Î c x 7 f > 7 • * < , -? , « Œ y i / Z j F, 4 IE » ? FET ¿> « H I W iim m ) X T 't .

2SK1216

Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary