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    2SK152 Search Results

    2SK152 Datasheets (96)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK152
    InterFET N-Channel silicon junction field-effect transistor Original PDF 87.01KB 1
    2SK152
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 118.63KB 1
    2SK152
    Unknown High Frequency Device Data Book (Japanese) Scan PDF 49.32KB 1
    2SK152
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 101.94KB 1
    2SK152
    Unknown FET Data Book Scan PDF 92.77KB 2
    2SK152
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 77.21KB 1
    2SK152
    Sony Scan PDF 83.26KB 2
    2SK1520
    Hitachi Semiconductor Silicon N Channel MOS FET Original PDF 51.54KB 9
    2SK1520
    Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF 52.05KB 9
    2SK1520
    Renesas Technology Silicon N Channel MOS FET Original PDF 78.95KB 7
    2SK1520
    Hitachi Semiconductor Power Transistors Data Book Scan PDF 207.86KB 2
    2SK1520
    Unknown FET Data Book Scan PDF 105.25KB 2
    2SK1520
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 71.35KB 1
    2SK1520
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 79.04KB 1
    2SK1520-E
    Renesas Technology Silicon N Channel MOS FET Original PDF 78.34KB 7
    2SK1521
    Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF 51.08KB 9
    2SK1521
    Hitachi Semiconductor Silicon N Channel MOS FET Original PDF 50.55KB 9
    2SK1521
    Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF 60.33KB 8
    2SK1521
    Renesas Technology Silicon N-Channel MOS FET Original PDF 72KB 11
    2SK1521
    Renesas Technology Silicon N Channel MOS FET Original PDF 78.1KB 7
    SF Impression Pixel

    2SK152 Price and Stock

    Select Manufacturer
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1522-E1-E#T2 204
    • 1 $38.42
    • 10 $38.42
    • 100 $30.73
    • 1000 $29.77
    • 10000 $29.77
    Buy Now

    Hitachi Ltd 2SK1528S

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1528S 32
    • 1 $11.70
    • 10 $8.78
    • 100 $7.90
    • 1000 $7.90
    • 10000 $7.90
    Buy Now

    Renesas Electronics Corporation 2SK1528(L)

    TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,4A I(D),TO-262AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1528(L) 30
    • 1 $4.14
    • 10 $3.04
    • 100 $2.76
    • 1000 $2.76
    • 10000 $2.76
    Buy Now
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1527 24
    • 1 $35.14
    • 10 $33.38
    • 100 $31.63
    • 1000 $31.63
    • 10000 $31.63
    Buy Now
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1526 13
    • 1 $39.12
    • 10 $37.16
    • 100 $35.21
    • 1000 $35.21
    • 10000 $35.21
    Buy Now

    2SK152 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK1118

    Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
    Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531


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    2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 PDF

    2SK152

    Abstract: 2SK152 Sony 2sk152 equivalent
    Contextual Info: 2SK152 SONY. Silicon N-Channel Junction FET Package Outline Description The 2SK152 is the first device to reach such a high "Figure of merit" level. Because it uses the latest Epitaxy and Pattern technology. Head amplifiers Video Cameras VTRs etc. per­ form very efficiently.


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    2SK152 2SK152 2SK152 Sony 2sk152 equivalent PDF

    TRANSISTOR bH-10

    Abstract: marking BH-10 2SJ200 2SK1529 SC-65
    Contextual Info: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs|= 4 .0 S Typ. • Complementary to 2SK1529


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    2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10 PDF

    2SK1521

    Abstract: 2SK1522 Hitachi DSA00108
    Contextual Info: 2SK1521, 2SK1522 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter


    Original
    2SK1521, 2SK1522 2SK1521 D-85622 2SK1521 2SK1522 Hitachi DSA00108 PDF

    Contextual Info: 2SJ200 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ200 ○ 低周波電力増幅用 単位: mm : VDSS = −180V z 高耐圧です。 z 高順方向伝達アドミタンスです。 : |Yfs|= 4.0S 標準 z 2SK1529 とコンプリメンタリになります。


    Original
    2SJ200 2SK1529 PDF

    Hitachi DSA002779

    Contextual Info: 2SK1528 L , 2SK1528(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline


    Original
    2SK1528 D-85622 Hitachi DSA002779 PDF

    2SK1529

    Abstract: K1529 2SJ200
    Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original
    2SK1529 2SJ200 2SK1529 K1529 2SJ200 PDF

    2SK1522-E

    Contextual Info: 2SK1521, 2SK1522 Silicon N Channel MOS FET REJ03G0949-0300 Rev.3.00 May 13, 2009 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter


    Original
    2SK1521, 2SK1522 REJ03G0949-0300 PRSS0004ZF-A 2SK1521 2SK1522 2SK1522-E PDF

    2SK1529

    Abstract: Toshiba 2SJ
    Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original
    2SK1529 2SJ200 2SK1529 Toshiba 2SJ PDF

    Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Tc = 25°C)


    Original
    2SK1529 2SJ200 2-16C1B K1529 PDF

    2sk152 equivalent

    Abstract: 2SJ44 2SK113 2SK152
    Contextual Info: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Process Unit Limit V M in Parameters


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    2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2sk152 equivalent 2SJ44 2SK113 2SK152 PDF

    2SK1529

    Abstract: 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b
    Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


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    2SK1529 2SJ200 2SK1529 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b PDF

    Contextual Info: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit


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    2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L PDF

    2SK1529

    Contextual Info: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : Vj3gg = 180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ.


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    2SK1529 2SJ200 2SK1529 PDF

    Hitachi DSA002779

    Contextual Info: 2SK1526, 2SK1527 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3PL


    Original
    2SK1526, 2SK1527 2SK1526 2SK1527 15ica, D-85622 Hitachi DSA002779 PDF

    Hitachi DSA002748

    Contextual Info: 2SK1526, 2SK1527 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original
    2SK1526, 2SK1527 2SK1526 2SK1527 15ica, D-85622 Hitachi DSA002748 PDF

    2SK1523

    Abstract: FP10W50 tccc
    Contextual Info: VXvU-X /\° 7 -M 0 S F E T VX Series Power MOSFET OUTLINE DIMENSIONS 2SK1523 C F 5 P 1 W V 5 1 ] A • A C i s s • 7 ,- i • A C 10 0 V * A * 7 . 'T y - > ? > ^ 5 Ä © B E S jg • 'T V A '- i' RATINGS Absolute Maximum Ratings « & ie # Symbol i


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    2SK1523 FP10W50] 2SK1523 FP10W50 tccc PDF

    k1523

    Abstract: 2SK1523 FP10W50 k1523 diode
    Contextual Info: V X '> y -X /\°7 -M 0 S F E T V X S e rie s P o w er M O SFET imttfem 2SK1523 OUTLINE DIMENSIONS [FP10W50] 500V 10A • A * S * Ciss 9 % ' Æ iK ff î •A C 1O O V *A tHOT,-^ ' y ? y y W M •x -f • - fV K - í' • Æ të ft RATINGS Absolute Maximum Ratings


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    2SK1523 FP10W50] -K1523 2113fi7 DDD2S27 k1523 2SK1523 FP10W50 k1523 diode PDF

    2SK1521

    Abstract: 2SK1522 2SK152-1 DSA003767
    Contextual Info: 2SK1521, 2SK1522 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter


    Original
    2SK1521, 2SK1522 2SK1521 2SK1521 2SK1522 2SK152-1 DSA003767 PDF

    Contextual Info: 2SK1519, 2SK1520 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode trr = 90 ns • Suitable for motor control, switching regulator, DC-DC converter


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    2SK1519, 2SK1520 2SK1519 PDF

    Contextual Info: 2SK1526, 2SK1527 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter


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    2SK1526, 2SK1527 2SK1526 PDF

    2SK1520

    Abstract: 2SK1519 2SK151 DSA003639
    Contextual Info: 2SK1519, 2SK1520 Silicon N-Channel MOS FET ADE-208-1288 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter


    Original
    2SK1519, 2SK1520 ADE-208-1288 2SK1519 2SK1520 2SK1519 2SK151 DSA003639 PDF

    K1529

    Abstract: 2SK1529 2SJ200 Toshiba 2SJ
    Contextual Info: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)


    Original
    2SK1529 2SJ200 K1529 K1529 2SK1529 2SJ200 Toshiba 2SJ PDF

    2sk152 equivalent

    Abstract: 2SK152 2SK152 Sony SK152 fet SK152
    Contextual Info: 2SK152 S ony. Silicon N-Channel Junction FET Unit: mm Package Outline Description The 2SK1 52 is the first device to reach such a high "Figure of m erit" level. Because it uses the latest Epitaxy and Pattern technology. Head amplifiers Video Cameras VTRs etc. per­


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    2SK152 2SK152 2sk152 equivalent 2SK152 Sony SK152 fet SK152 PDF