2SK113 Search Results

2SJ166

Abstract: 2SK1133 diode ir30
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SK1133 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm

2SK105 Datasheet

Abstract: 2SK105 2SK59 to-226aa 2sk105 jfet 2SK40 TO226AA 2SK17 2SK113 2d201
Contextual Info: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions

2sk152 equivalent

Abstract: 2SJ44 2SK113 2SK152
Contextual Info: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Process Unit Limit V M in Parameters

NEC JAPAN IC IC D 7520

Contextual Info: DATA SHEET SEC / MOS FIELD EFFECT TRANSISTOR 2SK1133 N-CHANNEL MOS FET FOR HIGH SPEED SW ITCHING PACKAGE DIMENSIONS Unit : mm The 2S K1133, N-channei vertical type MOS FET, is a sw itching device w h ich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V

Contextual Info: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit

smd transistor g11

Abstract: marking G11 smd transistor marking 36 2SK1133 5V GATE TO SOURCE VOLTAGE MOSFET VDS50V
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK1133 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Not necessary to consider driving current because of 0.4 3 Directly driven by Ics having a 5V power source. 1 Possible to reduce the number of parts by omitting the biasresistor.

2sk129

Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119

2SK725A

Abstract: 2SK903 2SK1018 2SK1010 T0220F 2SK956 2SK953
Contextual Info: COLLMER SEMICONDUCTOR INC 22307^2 ÜÜD1S7Ô 1S3 HfiE D ICOL <§ MOSFETS F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099 2SK725 2SK899

2SK11

Abstract: 2SJ165 2SK1132 50VVGS
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SK1132 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING The 2SK1132, N-channel vertical type MOS FET, is a sw itching PACKAGE DIMENSIONS Unit : mm device w hich can be driven d ire ctly by the o u tp u t o f ICs having a 5 V power source.

Contextual Info: Product specification 2SK1133 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Not necessary to consider driving current because of 0.4 3 Directly driven by Ics having a 5V power source. 1 Possible to reduce the number of parts by omitting the biasresistor.

2SK1132

Abstract: 2SJ165
Contextual Info: N 2SK1132Ü, N ^ * ;H iÉ M O S FET ^ H g S S - f c f c t t - S , i l l X ^ 7 f / 7 f ^ MOS F E T ~V'h 0y"'v , 'i X t L ^ - Ü : mm 4 .0 ± 0.2 Z M M T to 6* u n m O iW j^ K ÿ j ' f V o5 V t ° "y X 9 IC fr b KffiÎBÿiT”ë â to o ffii/C I*]/® ; l - 7 >

2sk152 equivalent

Abstract: IFN152 INTERFET 2SK152 2SJ44 IFP44 2SK113 10 V jfet databook 2SK363
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P

T03P

Abstract: 2SK101
Contextual Info: COLLNER SE MICONDUCTOR INC b3E D • 22307^2 00D1A70 b05 « C O L <§ MOSFETs F-l Series Low R d s ON 50-900 Volts Device TvDe 2SK1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1549 2SK902 2SK901A 2SK902A 2SK949M 2SK950 2SK723

2sj165

Abstract: X13769XJ2V0CD00 SC-84 2SK2541 SC-59 SC-62 2SK2070 2SK2858 2SK1591 2sk2159
Contextual Info: ロード・マップ トランジスタ 機能・用途別（シグナルMOS FET） VDSS - ID DC マップ (4 V 駆動タイプ) VDSS(V) 30 ID(DC)(A) 50 0.1 2SK1132 (50 Ω / SST) 2SJ165 (50 Ω / SST) 0.2 2SK1582 (5.0 Ω / SC-59) 0.5 2SK679A (1.0 Ω / TO-92)

2SK1133

Abstract: marking Td MOSFET 2SJ166
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK1133 N チャネル MOSFET スイッチング用 2SK1133 は，N チャネル縦型 MOSFET であり，デジタル回 外形図（単位：mm） 路における，高速スイッチング・デバイスとして最適です。

2SK956

Abstract: 2sk1005 2SK947 2SK1015 2SK948 436s 2SK906A 0 280 130 055 2SK726 2SK900
Contextual Info: COLLMER S E M I C O N D U C T O R INC SEBûT'iS ÜÜD1S 7Ô 153 4ñE » MOSFETS ICOL <§ 13 F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099

nec D 7520 C

Abstract: lEI-616 2SJ166 2SK1133
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SK1133 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm The 2SK1133, N-channel vertical type MOS FET, is a switching device which can be driven d ire ctly by the o u tp u t of ICs having a 5 V power source.

2SK105 DGS

Abstract: 2SK105 V6010 2sj44
Contextual Info: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions

2SK726

Abstract: 2SK955 2SK956 2sk94 2SK727 2SK906A 2SK1004 2SK902A 2SK900 2sk1018
Contextual Info: COLLMER S E M I C O N D U C T O R INC SEBûT'iS ÜÜD1S 7Ô 153 4ñE » MOSFETS ICOL <§ 13 F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099

2SK146

Abstract: 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2SK147 2sk152 equivalent Japanese Transistor
Contextual Info: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions

2SK146

Abstract: 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 IFP44 2SJ44
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P

SC-59

Abstract: 2SJ178 2SJ211 2SJ355 sp-8 package 2SK1657 SC-84
Contextual Info: Road map Transistor Function/Application Signal MOS FET VDSS - ID(DC) MAP (4 V Gate-Driven Series) VDSS(V) 30 ID(DC)(A) 50 0.1 0.2 0.5 1.0 1.5 2.0 3.0 (RDS(on)MAX∗/Package) 2SK1132 (50 Ω / SST) 2SJ165 (50 Ω / SST) 2SK1582 (5.0 Ω / SC-59) 2SK679A

2SK1133

Abstract: 2SK113 2SJ166 marking G11
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1133 SWITCHING N-CHANNEL MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1133, N-channel vertical type MOSFET, is a switching 2.8 ±0.2 0.4 +0.1 –0.05 device which can be driven directly by the output of ICs having a

2SK1135

Contextual Info: 2SK1135 MMTbBDS D G 1 3 1 Ô 3 ‘ìfl'ì • H I T H ITACHI/ O P T O E L E C T R O N I C S 4 blE D SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 1. Gate 2. Drain (F lan g e) 3. Source (D im ensiona i ■ FEATURES • Low On-Resistance • High Speed Switching