2SK2041 Search Results

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

2SK2041

Contextual Info: 2SK2041 Silicon N-channel MOSFET Features Dimensions Units : mm available in PSD package 2SA2041 (PSD) low on-resistance fast switching speed wide SOA (Safe Operating Area) low logic level drive requirements simple drive requirements Tnr easy to parallel

2SA2041

Abstract: 2SK2041
Contextual Info: 2SK2041 Silicon N-channel MOSFET Features Dimensions Units: mm available In PSD package 2SA2041 (PSD) low on-resistance fast switching speed wide SOA (Safe Operating Area) low logic level drive requirements simple drive requirements easy to parallel (1) Gate

2SK2041

Contextual Info: h 7 'yV $ /T r a n s is to r s 2SK2041 B»M 2SK2041 > V =l > N ? -V * ^ MOS Silicon N-channel MOSFET X < y ^ > *7 /Switching h7>v^$ * ii-ffi^tiiH/Dimensions (Unit : mm • * « 1) & * > m , 2) K0 3) SO A A 'l2 ;i'0 4) * E I E « I ( 4 V f f i» ) 0 5) ieK(elS&*'-(i!!¥0

Contextual Info: Power MOSFET transistors Power MOSFET transistors Features • available in the following packages — MPT3 SC-62, US/European SOT-89 — CPT F5 (SC-63, TO-252 D-PAK) — PSD(D2-PAK) • can be driven at 4 V, that is directly from an 1C, saving inclusion of buffer transistors on

TA143E

Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Contextual Info: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0

2SK2430

Abstract: 2SK2042 2SK2306 2SK2041 2SK2094 2SK2103 2SK2104 2SK2105 2SK2463
Contextual Info: R D N fn POWER MOSFET 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IC, saving counts of components buffer transistors

IMH10

Contextual Info: Index Index 2SA1036K 69 2SA1037AK 73 2SA1514K 77 2SA1576A 73 2SA1577 69 2SA1579 77 2SA1727F5 81 2SA1759 85 2SA1774 73 2SA1797 89 2SA1807F5 92 2SA1834F5 96 2SA1862F5 100 2SA1870 104 2SA1900 106 2SC4617 169 2SC4649 160 2SC4672 201 2SC4713K 204 2SC4774 204 2SC4938 209

2SA1885

Abstract: T147
Contextual Info: Transistors From very small EM3 type package to high power PSD package the power dissipation is equivalent to T0-220, Pc=35W transistors. EM3 • UMT • SMT Three types are available to allow the most suitable package depending on size specifications. Pc (mW)

2SK230

Abstract: 2SK2463
Contextual Info: •UNITI POWER MGSFET s M 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IC, saving counts of components buffer transistors

T101

Contextual Info: nourri POWER MOSFET S M Excellent switching capability with low on resistance, suitable for switching power supply or DC-DC converter. Taping prducts for use on an automatic mounting machine are also available. Quick reference n\ V dss V 30 60 2SK2103 (MPT)

2SK2430

Abstract: F5 SOT-89 2SK2463 2SK2105 2SK243 2SK2041 2SK2042
Contextual Info: POWER MÜSFET M inuit 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IO, saving counts of components buffer transistors