2SK241 Search Results

d1308

Abstract: d1297 D12971E 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed in millimeter 3.0 ±0.3 for high speed switching applications.

2SK2417

Abstract: transistor marking 75s
Contextual Info: TOSHIBA 2SK2417 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE tt-M O S V 2SK2417 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS 10 ±0.3

SLA5038

Abstract: 2SK1190 SLA5015 2SK1192 SLA5013 2SK1180 2SK1191 SLA5012 SMA5106 2SK2848
Contextual Info: 3 Power MOSFETs 3-1. MOSFETs 3-2. MOSFET Arrays 25 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419

2SK241

Contextual Info: TOSHIBA 2SK241 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK241 FM TUNER, VHF AND RF AM PLIFIER APPLICATIONS. • • • • Low Reverse TransferCapacitance Low Noise Figure High Power Gain Recommend Operation Voltage Unit in mm AÜMAX. : Crss = 0.035pF Typ.

2SK241

Abstract: 2SK24
Contextual Info: TOSHIBA 2SK241 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK241 FM TUNER, VHF AND RF AM PLIFIER APPLICATIONS. • • • • ¿am . Low Reverse Transfer Capacitance Crss = 0.035pF Typ. NF = 1.7dB (Typ.) Low Noise Figure High Power Gain Gps - 28dB (Typ.)

2SK241

Contextual Info: TO SH IBA 2SK241 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK241 Unit in mm FM TUNER, VHF AND RF AMPLIFIER APPLICATIONS • • • • 4.2MAX. Low Reverse Transfer Capacitance Crss = 0.035 pF Typ. NF = 1.7dB (Typ.) Low Noise Figure High Power Gain

RE LOG 2 TZ 11

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2410 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2410 is N -C hannel MOS Field Effect T ra n s is to r de­ PACKAGE DIMENSIONS in m illim e te rs s ig n e d f o r high speed s w itc h in g a pp licatio ns.

k2415

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2S K2415 is N-Channel MOS Field Effect Transistor designed in m illim eters for high voltage switching applications.

2SK1177

Abstract: 2SK2420 2SK1180
Contextual Info: 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419 22.0 35 EAS RDS (ON) max (VGS = 10V) Ciss (typ)

2SK2412

Abstract: IEI-1213 MEI-1202 MF-1134 TC-8031
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2412 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2412 is N-Channel MOS Field Effect Transistor de- in millimeters signed for high speed switching applications. 4.5 ±0.2

2SK2415

Abstract: 2SK2415-Z IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2415 is N-Channel MOS Field Effect Transistor designed + 0.2 1.5 – 0.1 in millimeters for high voltage switching applications.

2SK2417

Abstract: 2SK2417 Equivalent
Contextual Info: 2SK2417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2417 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.42 Ω (typ.) High forward transfer admittance : |Yfs| = 7.5 S (typ.)

2SK241

Contextual Info: TO SH IBA 2SK241 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK241 Unit in mm FM TUNER, VHF AND RF AMPLIFIER APPLICATIONS • • • • 4.2MAX. Low Reverse Transfer Capacitance Crss = 0.035 pF Typ. NF = 1.7dB (Typ.) Low Noise Figure High Power Gain

NEC 2415

Abstract: NEC JAPAN 2415 2SK2415
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415,2415-Z SWITCHING N-CHANNEL POWER MOS FET Description PACKAGE DRAWINGS Unit: mm TO-251 (MP-3) 1.5 −0.1 5.0 ±0.2 RDS(on)2 = 0.15 Ω MAX. (VGS = 4 V, ID = 4.0 A) 2 5.5 ±0.2 1 RDS(on)1 = 0.10 Ω MAX. (VGS = 10 V, ID = 4.0 A)

2SK2414

Contextual Info: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistors 2SK2414, 2414-Z NチャネルパワーMOSFET スイッチング用 外形図（単位：mm） 5.0 ±0.2 電源用途に最適です。 2 3 1.1 ±0.2 RDS（on）1 = 70 mΩ最大（VGS = 10 V, ID = 5.0 A）

transistor marking 75s

Contextual Info: 2SK2417 T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR i SILICON N CHANNEL MOS TYPE tt-M OSV <; k i 17 û HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •

Transistor D 2494

Abstract: 2SK2413 IEI-1213 MEI-1202 MF-1134 TC-8032
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2413 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2413 is N-Channel MOS Field Effect Transistor de- in millimeter signed for high speed switching applications. FEATURES • Low On-Resistance

K2417

Abstract: 2SK2417
Contextual Info: 2SK2417 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2417 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.42Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.5S (標準)

k2417

Abstract: transistor k2417 2SK2417 Equivalent 2SK2417
Contextual Info: 2SK2417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2417 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.42 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.5 S (typ.)

2SK2410

Abstract: IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2410 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2410 is N-Channel MOS Field Effect Transistor de- in millimeters signed for high speed switching applications. 4.5 ±0.2

2SK241

Abstract: 2sk241 mos fet dual-gate DC bias of FET 2SK302
Contextual Info: 3. 3-TERMINAL MOS FET FOR USE AT HIGH-FREQUENCIES 2SK241, 2SK302 nal injector terminal for mixer circuits, and an AGC terminal. However, there is another method as shown in Figure 3.1. This shows a typical high-frequency amplifier in a Hi-Fi tuner. Gate 2 in the figure is

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2412 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2412 is N -C hannel M O S F ield E ffect T ra n s is to r d e ­ in m illim e te rs sig n e d fo r h ig h speed s w itc h in g a p p lic a tio n s .

K2417

Abstract: transistor k2417
Contextual Info: 2SK2417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2417 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.42 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.5 S (typ.)

NEC JAPAN 2415

Abstract: NEC 2415 2415-Z 2SK2415
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415,2415-Z SWITCHING N-CHANNEL POWER MOS FET Description The 2SK2415 is N-Channel MOS Field Effect Transistor de- PACKAGE DRAWINGS Unit : mm signed for high voltage switching applications. 1.5 −0.1 Features +0.2