Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK302 Search Results

    2SK302 Datasheets (65)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK302
    		Toshiba Field Effect Transistor Silicon N Channel MOS Type Original PDF 410.76KB 7
    2SK302
    		Unknown High Frequency Device Data Book (Japanese) Scan PDF 43.74KB 1
    2SK302
    		Unknown SMD, Metal oxide N-channel FET, depletion type Scan PDF 256.3KB 6
    2SK302
    		Unknown FET Data Book Scan PDF 92.11KB 2
    2SK302
    		Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF 3.62MB 6
    2SK302
    		Toshiba Silicon N channel field effect transistor for FM tuner, VHF RF amplifier applications Scan PDF 282.82KB 7
    2SK302
    		Toshiba Junction FETs / MOSFET / Transistors Scan PDF 69.05KB 1
    2SK3020
    		Sanyo Semiconductor N-CHANNEL SILICON MOSFET Original PDF 179.9KB 4
    2SK3020
    		Sanyo Semiconductor TP Type / MP Type Transistors Scan PDF 81.25KB 1
    2SK3020-TP
    		Micro Commercial N-CHANNEL MOSFET,SOT-723 Original PDF 824.92KB 4
    2SK3020TP
    		Sanyo Semiconductor DC/DC Converter Applications Original PDF 179.89KB 4
    2SK3021
    		Sanyo Semiconductor DC-DC converter Original PDF 153.13KB 4
    2SK3021
    		Sanyo Semiconductor TP Type / MP Type Transistors Scan PDF 81.25KB 1
    2SK3021TP
    		Sanyo Semiconductor N-Channel Silicon MOSFET for DC/DC Converter Apps Original PDF 153.12KB 4
    2SK3022
    		Kexin N-Channel Power F-MOSFET Original PDF 44.17KB 1
    2SK3022
    		Panasonic Silicon N-Channel Power MOSFET Original PDF 55.55KB 2
    2SK3022
    		Panasonic Silicon N-Channel Power F-MOS FET Original PDF 23.44KB 1
    2SK3022
    		Panasonic N-Channel Power F-MOS FET Original PDF 33.68KB 2
    2SK3022
    		TY Semiconductor N-Channel Power F-MOSFET - TO-252 Original PDF 87.38KB 1
    2SK302200L
    		Panasonic FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 5A UG-2 Original PDF 3

    2SK302 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IC MOSFET SMD Type Product specification 2SK3024 Features TO-252 Avalanche energy capacity guaranteed High-speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low ON-resistance 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15


    Original     		2SK3024 O-252 PDF

    2SK3024

    Abstract: 10A DIODE
    Contextual Info: Power F-MOS FETs 2SK3024 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		2SK3024 2SK3024 10A DIODE PDF

    Contextual Info: Power F-MOS FETs 2SK3029 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		2SK3029 PDF

    2SK3028

    Contextual Info: Power F-MOS FETs 2SK3028 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		2SK3028 23nductor 2SK3028 PDF

    2SK3025

    Contextual Info: Power F-MOS FETs 2SK3025 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		2SK3025 2SK3025 PDF

    2SK3026

    Contextual Info: Power F-MOS FETs 2SK3026 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		2SK3026 O-220E 2SK3026 PDF

    K3022

    Abstract: 2SK3022
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3022 Silicon N-channel power MOSFET • Package • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown • Low-voltage drive


    Original     		2002/95/EC) 2SK3022 K3022 2SK3022 PDF

    2SK3023

    Contextual Info: Power F-MOS FETs 2SK3023 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		2SK3023 2SK3023 PDF

    2SK3023

    Contextual Info: Power F-MOS FETs 2SK3023 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		2SK3023 2SK3023 PDF

    2SK241

    Abstract: 2sk241 mos fet dual-gate DC bias of FET 2SK302
    Contextual Info: 3. 3-TERMINAL MOS FET FOR USE AT HIGH-FREQUENCIES 2SK241, 2SK302 nal injector terminal for mixer circuits, and an AGC terminal. However, there is another method as shown in Figure 3.1. This shows a typical high-frequency amplifier in a Hi-Fi tuner. Gate 2 in the figure is


    OCR Scan     		2SK241, 2SK302) 2SK241) 2SK882) 2SK241 2sk241 mos fet dual-gate DC bias of FET 2SK302 PDF

    2SK3024

    Contextual Info: IC MOSFET SMD Type Silicon N-Channel Power F-MOSFET 2SK3024 Features TO-252 Avalanche energy capacity guaranteed High-speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low ON-resistance 2.3 +0.1 0.60-0.1 3.80


    Original     		2SK3024 O-252 2SK3024 PDF

    2SK3022

    Contextual Info: IC MOSFET SMD Type Silicon N-Channel Power F-MOSFET 2SK3022 Features TO-252 Avalanche energy capacity guaranteed High-speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low ON-resistance 2.3 +0.1 0.60-0.1 3.80


    Original     		2SK3022 O-252 2SK3022 PDF

    Contextual Info: Power F-MOS FETs 2SK3027 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		2SK3027 PDF

    K3024

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3024 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator


    Original     		2002/95/EC) 2SK3024 K3024 PDF

    2SK3027

    Abstract: 60Gate 12M11
    Contextual Info: Power F-MOS FETs 2SK3027 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		2SK3027 2SK3027 60Gate 12M11 PDF

    2SK3025

    Contextual Info: Power F-MOS FETs 2SK3025 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		2SK3025 2SK3025 PDF

    ta2106

    Abstract: 2SK3020 62293
    Contextual Info: Ordering number:ENN6229 N-Channel Silicon MOSFET 2SK3020 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2083B [2SK3020] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 3 2.3 2.3 1 : Gate


    Original     		ENN6229 2SK3020 2083B 2SK3020] 2092B ta2106 2SK3020 62293 PDF

    k3022

    Abstract: 2SK3022
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3022 Silicon N-channel power MOSFET • Features ■ Package • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown


    Original     		2002/95/EC) 2SK3022 K3022 k3022 2SK3022 PDF

    2SK302

    Contextual Info: TO SH IBA 2SK302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK302 Unit in mm FM TUNER, VHF RF AMPLIFIER APPLICATIONS • • • • Crss = 0.035pF Typ. NF = 1.7dB (Typ.) Gpg = 28dB (Typ.) 5-15V Low Reverse Transfer Capacitance Low Noise Figure


    OCR Scan     		2SK302 035pF O--236 2SK302 PDF

    2SK3029

    Contextual Info: Power F-MOS FETs 2SK3029 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		2SK3029 2SK3029 PDF

    k3025

    Abstract: 2SK3025
    Contextual Info: Power MOSFETs 2SK3025 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator 0.8 max. 1.0±0.1 0.1±0.05 0.5±0.1 0.75±0.1


    Original     		2SK3025 k3025 2SK3025 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK3025 Silicon N-channel power MOS FET • Package ■ Features • Code U-DL • Pin Name 1: Gate 2: Drain 3: Source M Di ain sc te on na tin nc ue e/ d • Avalanche energy capability guaranteed


    Original     		2002/95/EC) 2SK3025 K3025 PDF

    td 1555

    Abstract: 2SK3028
    Contextual Info: Power F-MOS FETs 2SK3028 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		2SK3028 td 1555 2SK3028 PDF

    2SK3022

    Contextual Info: Power F-MOS FETs 2SK3022 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		2SK3022 2SK3022 PDF