2SK247 Search Results

Contextual Info: PU J1 2SK2470-01 MR N-channel MOS-FET tìU tìlE L T te U K FAP-II Series 300V > Features - 0,53ß 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Avalanche Proof

Contextual Info: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01

Contextual Info: 2SK2474 Power F-MOS FETs 2SK2474 Silicon N-Channel MOS Unit : mm For high-speed switching 6.5±0.1 5.3±0.1 • Features 1.8±0.1 2.5±0.1 4.35±0.1 3.0±0.1 ON-resistance RDS on 0.85±0.1 Symbol Rating Unit Drain-Source breakdown voltage VDSS 250 V Gate-Source voltage

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SW ITCHING N-CHANNEL POWER M O S FET INDUSTRIAL USE DESCRIPTION The 2SK2478is N-Channel MOS Field E ffe c tT ra n s is to r designed P A C K A G E D IM E N S IO N S in m illimeter fo r hig h v o lta g e s w itc h in g applications,

D10271

Abstract: TO-220-AP
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N T he 2SK2479 is N -C hannel M O S Field E ffect T ra n s is to r d e ­ PACKAGE D IM E N S IO N S in m illim e te rs sig n e d fo r h ig h v o lta g e s w itc h in g a p p lic a tio n s .

5310A

Contextual Info: 2SK2471-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,53Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

D1026

Abstract: 2SK2364 2SK2476 wy 509
Contextual Info: M O S F ie ld E ffe c t T r a n s is to r 2SK2476 N ^ - Ÿ T 'J l'/W x -M O S FET m m 2SK2363/2SK2364«N5l + ^;U Ìé M / W - MOS FET7\ X -f -y ^ > ^ 1 4 ^ ' 1 * n T Ì 3 V , # -f -y 3=-> ft O y - M f iI± 3 0 V f Ä lIT '- r o O tìÀ Ciss = 590 p F t l ï

2SK2476

Abstract: IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2476 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2476 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3

mosfet 300V 10A

Abstract: 2SK2471-01 5310A
Contextual Info: 2SK2471-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,53Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

1Lp marking

Abstract: TI42 2SK316 100AA 2SK247 2SK301 b5ml BT35 ic marking Yb
Contextual Info: PANASONIC INDL/ELEKiSEMI} 7EC D | b^EflSM D0mb7b 2SK247 2SK247 " F y IJ □ y N f N-Channel Junction "b Ib 1! /W ide-B and, Low -N oise Amplifier • i# • ^ /F e a tu re s A iJ # M ;C ,SS5 ^ h 5 i'0/ L o w Ciss • S S s > 7 9 9 > x gra A{± £ i ' 0/H ig h gm

Contextual Info: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01

D1026

Abstract: 2SK2477 MP-88 2SK24
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2477 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2477 is N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES • Low on-state resistance RDS on = 1.0 Ω MAX. (VGS = 10 V, ID = 5.0 A)

Contextual Info: 2SK2471-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,53Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: 2SK2473-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,2Ω 20A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

55L Power Mosfet

Abstract: 150P T151 VI-AIM RGS100 80-XI
Contextual Info: FUJI '95 No. 12 ^ít£;í:i;l-*?»<?<r.¿í.;Mi: !'Í-Í> í¡í;!:¡í îii.ï ïf i3î.Sfï«-ï - _ 300V / 1 0 A / 0.53 Q ií d t /W —MOSFET FAP-D Nz- V ^ J l ' X > y \ > A ^ < > 2SK2470-01m r MOSFET mm N-channel enhancement mode POWER MOSFET M • ft

jm01

Abstract: HM 1211
Contextual Info: FUJI '95 No. 13 S U JM E iF iM E • , I. ; F uj i: S e ma€ o;n d u;ct c^r ; *P J^ ^ u c;t;s 300V /10A/ 0.530 l i d r / ' v r7 — M O S F E T 2SK2471 -01 F A P - n N5- y*Jl'X > / \ > 7 .j< > hff$/\°7~M0SFET mm N-c hannel enhancement mode PO W ER M O SFET

2SK2476

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2476 SW ITCHING N-CHANNEL POWER M O S FET INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SK2476is N-Channel MOS Field Effect T ra n s is to r designed in m illimeter fo r hig h v o lta g e s w itc h in g applications,

Contextual Info: FUJI '95 No.1 4 m ±w M :H :" '“ r : 3 0 0 V / 2 0 A / 0.2 Q Ii± /W —MOSFET F A P -n 2SK2473-01 Kffj/\°7-MOSFET N-c hannel enhancement mode POWER MOSFET I $ :H: Features nW vk High curre nt \\ i t > ilc ia Low -on resistance i\i%\LW W t) Low driving pow er

Contextual Info: FU JI 2SK2473-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,2Q 20A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2479 is N -C hannel MOS Field E ffect T ra n s is to r de­ PACKAGE D IM E N S IO N S in m illim e te rs sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s .

54mj

Abstract: SMD Transistor nc 2SK2479
Contextual Info: Transistors IC SMD Type MOS Field Effect Transistors 2SK2479 TO-263 Unit: mm Low On-state Resistance:RDS on =7.5 max.(VGS=10V,ID=2.0A) Low Ciss Ciss=485pF TYP 1 .2 7 -0+ 0.1.1 Features +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2

2SK2477

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2477 SW ITCHING N-CHANNEL POWER M O S FET INDUSTRIAL USE DESCRIPTION The 2SK2477 is N-Channel MOS Field Effect T ra n s is to r designed P A C K A G E D IM E N S IO N S in m illimeter fo r hig h v o lta g e s w itc h in g applications,

2SK2478

Abstract: IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2478 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3

Contextual Info: 2SK2470-01MR N-channel MOS-FET FAP-II Series 300V > Features - 0,53Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators