Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK316 Search Results

    2SK316 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3163-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 75A 7.5Mohm To-3P Visit Renesas Electronics Corporation
    2SK3162-E Renesas Electronics Corporation Nch Single Power Mosfet 200V 20A 75Mohm To-220Fm Visit Renesas Electronics Corporation
    2SK3161STR-E Renesas Electronics Corporation Nch Single Power Mosfet 200V 15A 115Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    2SK3160-E Renesas Electronics Corporation Nch Single Power Mosfet 200V 10A 170Mohm To-220Fm Visit Renesas Electronics Corporation
    2SK3161L-E Renesas Electronics Corporation Nch Single Power Mosfet 200V 15A 115Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SK316 Price and Stock

    Renesas Electronics Corporation 2SK3161STR-E

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK3161STR-E 2,219
    • 1 $3.408
    • 10 $3.408
    • 100 $3.408
    • 1000 $1.8744
    • 10000 $1.704
    		Buy Now
    Chip1Stop 2SK3161STR-E Cut Tape 2
    • 1 $1.61
    • 10 $1.61
    • 100 $1.61
    • 1000 $1.61
    • 10000 $1.61
    		Buy Now

    Hitachi Ltd 2SK3160

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK3160 22
    • 1 $13.65
    • 10 $6.825
    • 100 $6.825
    • 1000 $6.825
    • 10000 $6.825
    		Buy Now

    2SK316 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK316 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK316 Unknown FET Data Book Scan PDF
    2SK316 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK316 Panasonic Si N-channel junction. Video camera first stage amplifier, switching. Scan PDF
    2SK3160 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3160 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3160 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3160-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3161 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3161 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3161-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3161(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK3161(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3161L Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3161(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK3161(S) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3161S Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3161S Renesas Technology SMD, High Speed Power Amplifier, 200V 15A 75W, MOS-FET N-Channel enhanced Original PDF
    2SK3161STL-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3162 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK316 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3161

    Abstract: 2SK3161-E 2SK3161STL-E PRSS0004AE-A
    Text: 2SK3161 L , 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1086-0300 (Previous: ADE-208-734A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK3161 REJ03G1086-0300 ADE-208-734A) PRSS0004AE-A PRSS0004AE-B 2SK3161 2SK3161-E 2SK3161STL-E PRSS0004AE-A

    Hitachi DSA002779

    Abstract: No abstract text available
    Text: 2SK3162 Silicon N Channel MOS FET High Speed Power Switching ADE-208-735B Z 3rd. Edition February 1999 Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D


    Original     		PDF 2SK3162 ADE-208-735B 220FM Hitachi DSA002779

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK3161 L , 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 90 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 D 4 1


    Original     		PDF 2SK3161 Hitachi DSA002749

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK3160 Silicon N Channel MOS FET High Speed Power Switching 1st. Edition February 1999 Features • • • Low on-resistance RDS = 130 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 1. Gate 2. Drain


    Original     		PDF 2SK3160 220FM Hitachi DSA002749

    2SK3160

    Abstract: DSA003713
    Text: 2SK3160 Silicon N Channel MOS FET High Speed Power Switching ADE-208-751 Z 1st. Edition February 1999 Features • Low on-resistance R DS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM


    Original     		PDF 2SK3160 ADE-208-751 220FM 2SK3160 DSA003713

    2SK3161

    Abstract: 2SK3161L Hitachi DSA00239
    Text: 2SK3161 L , 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-734A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3161 ADE-208-734A 2SK3161L Hitachi DSA00239

    2sk4005

    Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321


    Original     		PDF 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2sk4005 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354

    Hitachi DSA0076

    Abstract: 2SK3160
    Text: 2SK3160 Silicon N Channel MOS FET High Speed Power Switching ADE-208-751A Z 2nd. Edition Mar. 2001 Features • Low on-resistance R DS =130mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2


    Original     		PDF 2SK3160 ADE-208-751A 220FM Hitachi DSA0076 2SK3160

    2SK3160

    Abstract: 2SK3160-E PRSS0003AD-A
    Text: 2SK3160 Silicon N Channel MOS FET High Speed Power Switching REJ03G1085-0300 Previous: ADE-208-751A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3160 REJ03G1085-0300 ADE-208-751A) PRSS0003AD-A O-220FM) 2SK3160 2SK3160-E PRSS0003AD-A

    2SK3162-E

    Abstract: 2SK3162 PRSS0003AD-A
    Text: 2SK3162 Silicon N Channel MOS FET High Speed Power Switching REJ03G1087-0400 Previous: ADE-208-735C Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3162 REJ03G1087-0400 ADE-208-735C) PRSS0003AD-A O-220FM) 2SK3162-E 2SK3162 PRSS0003AD-A

    Hitachi DSA002779

    Abstract: No abstract text available
    Text: 2SK3163 Silicon N Channel MOS FET High Speed Power Switching 1th Edition December. 1998 Features • • • Low on-resistance R DS on =6mΩ typ. Low drive current 4V gate drive device can be driven from 5V source Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain


    Original     		PDF 2SK3163 Hitachi DSA002779

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK3160 Silicon N Channel MOS FET High Speed Power Switching ADE-208-751 Z 1st. Edition February 1999 Features • Low on-resistance R DS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM


    Original     		PDF 2SK3160 ADE-208-751 220FM Hitachi DSA00279

    Hitachi DSA002753

    Abstract: No abstract text available
    Text: 2SK3163 Silicon N Channel MOS FET High Speed Power Switching 2nd Edition February 1999 Features • • • Low on-resistance RDS on = 6 mΩ typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain


    Original     		PDF 2SK3163 2SK3163 Hitachi DSA002753

    Hitachi DSA0076

    Abstract: 2SK3162
    Text: 2SK3162 Silicon N Channel MOS FET High Speed Power Switching ADE-208-735B Z 3rd. Edition Feb. 1999 Features • Low on-resistance R DS =60mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2


    Original     		PDF 2SK3162 ADE-208-735B 220FM Hitachi DSA0076 2SK3162

    2SK3163

    Abstract: No abstract text available
    Text: 2SK3163 Spice parameter .SUBCKT 2sk3163 1 2 3 * Model generated on Jul 26, 99 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model Version 1.0 * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM:


    Original     		PDF 2SK3163 1e-32 06858e-05 17288e-06 5e-09 55919e-09 XTI88e-06

    C3005

    Abstract: Hitachi DSA00280
    Text: 2SK3161 L , 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-734A (Z) 2nd. Edition Feb. 1999 Features • Low on-resistance R DS =90mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK


    Original     		PDF 2SK3161 ADE-208-734A D-85622 C3005 Hitachi DSA00280

    c2075

    Abstract: 2SK3162 Hitachi DSA00307
    Text: 2SK3162 Silicon N Channel MOS FET High Speed Power Switching ADE-208-735B Z 3rd. Edition February 1999 Features • Low on-resistance R DS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM


    Original     		PDF 2SK3162 ADE-208-735B 220FM c2075 2SK3162 Hitachi DSA00307

    2SK3163

    Abstract: 2SK3163-E PRSS0004ZE-A SC-65
    Text: 2SK3163 Silicon N Channel MOS FET High Speed Power Switching REJ03G1088-0300 Previous: ADE-208-736A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3163 REJ03G1088-0300 ADE-208-736A) PRSS0004ZE-A 2SK3163 2SK3163-E PRSS0004ZE-A SC-65

    2SK3163 equivalent

    Abstract: 2SK3163 Hitachi DSA00239
    Text: 2SK3163 Silicon N Channel MOS FET High Speed Power Switching ADE-208-736A Z 2nd Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–3P D G


    Original     		PDF 2SK3163 ADE-208-736A 2SK3163 equivalent 2SK3163 Hitachi DSA00239

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3160 Silicon N Channel MOS FET High Speed Power Switching HITACHI 1st. Edition February 1999 Features • Low on-resistance Rds = 1 3 0 m ii typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO -220FM Absolute Maximum Ratings Ta = 25 °C


    OCR Scan     		PDF 2SK3160 -220FM

    Untitled

    Abstract: No abstract text available
    Text: 2SK3161 L , 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance • • Rds = 90 m ii typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LD P A K


    OCR Scan     		PDF 2SK3161

    2sk3155

    Abstract: 2sk3148 Fuel injection
    Text: Hitachi Power MOS FET D5 Series : Low on-resistance at 1 00V to 200V V dss * i •Applications ¡Feature and Merit Electrical equipment Feature In-pipe fuel injection High 1 Monitor S-correction Merit High breakdown voltage promotes equipm ent safety planning


    OCR Scan     		PDF O-220 O-220FM 2SK3147 2SK3150 2SK3149 2SK3148 2SK3151 2SK3152 2SK3153 2sk3155 Fuel injection