2SK37 Search Results

2SK371

Contextual Info: TO S H IB A 2SK371 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SKB71 FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS U nit in mm Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfe| : |Yfs| = 4 0 m S Typ. (VDS = 10V,

mosfet 45a 200v

Abstract: 2SK3712
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3712 TO-252 Features High voltage: VDSS = 250 V Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 450 pF TYP. VDS = 10 V, ID = 0 A Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max +0.15 5.55-0.15

K3757

Abstract: 2SK3757
Contextual Info: 2SK3757 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK3757 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.9 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 1.0 S (標準)

Contextual Info: MOSFET IC SMD Type Product specification 2SK3794 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Low On-state resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25

K3797

Abstract: 2SK3797 2SK3797 equivalent
Contextual Info: 2SK3797 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK3797 ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.32 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.5 S (標準)

Contextual Info: Transistors IC SMD Type Product specification 2SK3731 TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features Low on-resistance, low Qg +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2

k3797

Abstract: K3797 Transistor 2SK3797 2sk3797 equivalent 400V DC circuits power control TC8020 2-10U1B
Contextual Info: 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3797 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.)

toshiba k3700

Abstract: 2SK3700 K3700 SC-65
Contextual Info: 2SK3700 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ 2SK3700 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.5 S (標準)

k3742

Abstract: K3742 transistor k3742 7 2SK3742
Contextual Info: 2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3742 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)

2SK3766

Contextual Info: 2SK3766 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK3766 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 0.65 S (標準)

Contextual Info: 2SK3700 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ 2SK3700 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.5 S (標準)

Contextual Info: Transistors IC MOSFET SMD Type Product specification 2SK3716 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 2700 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127

Contextual Info: Transistors IC SMD Type Product specification 2SK3712 TO-252 Features High voltage: VDSS = 250 V Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 450 pF TYP. VDS = 10 V, ID = 0 A Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max +0.15 5.55-0.15

D1677

Abstract: 2SK3794-Z 2SK3794
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3794 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3794 TO-251 MP-3

Contextual Info: T O S H IB A 2SK372 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK372 Unit in mm FOR AUDIO AM PLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • • • 4.2M AX. High Breakdown Voltage : VGDg = —40V High Input Impedance : IGg g = —l.OnA Max. (VGg = —30V)

TF-2502

Contextual Info: 2SK3784-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters

Contextual Info: 2SK3769-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Digital Audio Amp. DC-DC converters

2SK37

Abstract: FUJI DS-100
Contextual Info: 2SK3771-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Digital Audio Amp. DC-DC converters

2sk3773

Abstract: 2SK3773-01MR sd 2955
Contextual Info: 2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators

Contextual Info: 2SK3772-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters

300v 32a mosfet

Contextual Info: 2SK3773-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators

Contextual Info: 2SK3707 Ordering number : EN7706A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3707 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=45mΩ (typ.) 4V drive • Input capacitance Ciss=2150pF (typ.) Specifications

2955 mos

Contextual Info: 2SK3774-01L,S,SJ FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

2SK3771-01MR

Abstract: 2SK3771
Contextual Info: 2SK3771-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200407 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators