2SK947M Search Results

2SK955

Abstract: 2SK906A 2SK1134 2SK899 2SK900 2SK2001 2SK1660 2SK725 2SK2000A 2SK905
Contextual Info: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 V olts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A

2SK056

Contextual Info: MOSFETs F-l Series - Low Rds ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947M R 2SK901 i;-: tJdiruAin RSBr V dss (V ) MA) P d (W ) Qss(pt) Coss(pf) ton (ns) toff (ns) 50 100 250 250 250 45 32 12 12 20 125 125 80 40 125 0.03 0.06 0.30 0.30 0.15 3000

2SK2079-01M

Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M
Contextual Info: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45

2SK2079

Abstract: 2SK2079-01M
Contextual Info: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)

2SK1212

Abstract: 2sk904 replacement
Contextual Info: <5 MOSFETs F-l Series - Low R d s ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK902 2SK949MR 2SK950 2SK724 *2SK725 2SK899 2SK897MR '2SK903MR *2SK904 •2SK1105R *2SK1663L,S •2SK1384R •2SK955 2SK960MR 2SK961 Maximum Ratinas

2SK725

Abstract: 2sk899 2SK960 90-340 K949 2SK900 2SK903MR k902 k952 2SK1549R
Contextual Info: <S MOSFETs F-l Series - Low R d s ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK9Ò2 2SK949MR 2SK950 2SK724 2SK725 2SK899 2SK897MR 2SK903MR 2SK904 2SK1105R 2SK1663L.S 2ÔK1384R 2SK955 2SK960MR 2SK961 Miaximum Ratifias V dss (V)

2SK1134

Abstract: 2SK2000A 2SK900 2SK905 2SK905A 2SK906 2SK906A 2SK947M
Contextual Info: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 Volts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A

T03P

Abstract: 2SK101
Contextual Info: COLLNER SE MICONDUCTOR INC b3E D • 22307^2 00D1A70 b05 « C O L <§ MOSFETs F-l Series Low R d s ON 50-900 Volts Device TvDe 2SK1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1549 2SK902 2SK901A 2SK902A 2SK949M 2SK950 2SK723

sk1212

Abstract: 2SK1549R 2SK724 2SK900 2SK901 2SK905 2SK906 2SK947MR 2SK950
Contextual Info: <S MOSFETs F-l Series - Low R d s ON 50 - 800 Volts Miiximum Ralinas Device Type V dss (V) 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1540ft 2ÔK902 2SK949MR 2SK950 2SK724 2SK725 2SK899 2SK897MR 2SK903MR 2SK904 2SK1105R 2SK1663L.S 2ÔK1384R 2'3K055 2SK960MR

2SK955

Abstract: 2SK906A 2SK900 2SK1134 2SK725A 2SK899 2SK2000A 2SK905 2SK905A 2SK906
Contextual Info: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 V olts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A

2Sk955

Abstract: 2SK725 K949 2sk899 2SK960 EE35 2SK903-MR 2SK900 2SK903MR 2SK901
Contextual Info: MOSFETs F-l Series - Low R d s ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R ¿Sk902 2ÔK949MR 2SK950 2SK724 2SK725 2SK899 2SK897MR 2SK903MR 2SK904 2SK1105R 2SK1663L.S 2SK1384R 2SK955 2SK960MR 2SK961 Mi iximum Ratinas P d (W)

2sk2079

Abstract: 2SK2079-01M 2SK2001
Contextual Info: MOSFETs F-l Series Low R d S ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miìximum Ratinas V d s s (V) Id (A) 45

2sk2079

Abstract: 2SK955 2SK2079-01M 2SK727-01 2SK727 2SK899 2SK961 2SK900 2SK1549 2SK901
Contextual Info: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45

2SK100

Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:

2SK947-MR

Abstract: T151 FA-MT
Contextual Info: 2SK947-MR FUJI POW ER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I S E R I E S Outline Drawings ¡Features High speed switching Low on-resistance No secondary breakdown Low driving power •Applications U PS DC-DC converters General purpose power amplifier

2SK947-MR

Abstract: 2SK94 2SK947
Contextual Info: 2SK947-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power ■Applications • U PS • DC-DC converters • General purpose power amplifier

Contextual Info: 2SK947-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- I SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power TO-220F15 Applications UPS DC-DC converters General purpose power amplifier 2.54 3. Source

2SK2652

Abstract: 2SK2771-01R
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT

200V 50A mos fet

Abstract: 947-M 2SK947-M T3B diode
Contextual Info: 2SK947-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F -I S E R IE S Outline Drawings • Features »High speed sw itching >Low o n-resistance 4 .5 ± 0 2 »No secondary breakdow n 2 7±0 2 »Low driving p o w er ■A pplications

2SK947-MR

Abstract: T151 i705
Contextual Info: 2SK947-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power ■Applications • U PS • DC-DC converters • General purpose power amplifier

mosfet 55 nf 06

Abstract: 2SK947-MR
Contextual Info: 2SK947-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- I SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power TO-220F15 Applications UPS DC-DC converters General purpose power amplifier 2.54 3. Source

2sk mosfet

Abstract: 947-M 2sk 100a
Contextual Info: 2SK947-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES I Outline Drawings • Features • High speed switching • Low on-resistance 4 .5±02 032 / • No secondary breakdown 27±0 2 • Low driving power ÖÖ CM rO -H •H in D0®

Contextual Info: 2SK947-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I S E R IE S I Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power ■Applications • UPS • DC-DC converters • General purpose power amplifier

Contextual Info: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,