80JJS Search Results

oms 450

Abstract: 2SK1086-M A2131 P channel MOSFET 10A schematic
Contextual Info: 2SK1086-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S Outline Drawings • Features 1High current k 5 *0 2 'Low on-resistance »No secondary breakdown 2 7±0 2 >l_ow driving power 1High forward Transconductance

2SK1083-M

Contextual Info: 2SK1083-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S O utline D raw ings •Features High current ♦02 4 5*0 2 Low on-resistance No secondary breakdow n Low driving p o w er 'H ig h fo rw ard T ransconductance

Contextual Info: r r i \ [ LTC1286/LTC1298 TECHNOLOGY Micropower Sampling 12-Bit Serial I/O A/D Converters \ m A u g u s t 1993 F€ATUR€S DCSCRIPTIOH • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC1286/LTC1298 are micropower, 12-bit, sucessive approximation sampling A/D converters. They draw only

wt1e

Abstract: 2SK 93
Contextual Info: 2SK1013-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V USS = ± 3 0 V Guarantee • Avalanche-proof

NI3T

Abstract: te tfk TFK 03 Diode TFK U 111 B A211-1 a1ae 2SK1020 equivalent
Contextual Info: 2SK1020 F U JI PO W ER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Features lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage •Voss —± 30V Guarantee ■Applications

D-12

Abstract: IRGBC20S vqe 23 VQE 24 vqe 24 d transistor CD 910
Contextual Info: PD - 9.687A International |k>r|Rectifier IRGBC20S INSULATED GATE BIPOLAR TRANSÌSTOR Standard Speed IGBT Features • Swiiching-loss rating includes all "tail" tosses • Optimized tor line frequency operation { to 400 Hz See Fig. 1 tor Current vs. Frequency curve

2SK 129 A

Abstract: 1085 MR A2129 2SK1085-MR A2128
Contextual Info: 2SK1085-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - III S E R I E S • Features • Hicjh current • Low on-resistance • No secondary breakdown • Low driving power • Hich forward Transconductance ■Aoplications • Me tor controllers

VIP 100A

Abstract: 2SK2770-01 doom
Contextual Info: P U 2SK2770-01 J 1 E ïïïS D E N-channel MOS-FET 900V 5,5Q 3,5A 100W FAP-IIS Series > Features - Outline Drawing TO-3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

siemens igbt BSM 150 gb 100 d

Abstract: CJ 53B siemens igbt BSM100GB160D csccn
Contextual Info: SIEMENS BSM 100 GB 160 D IGBT Module VCE= 1600 V 'c =2* 135 A at TC=25°c 'c = 2* 100 A at Tc =80°C • Power module • Half-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Half-bridge Type Ordering code BSM 100 GB 160D

2SK1015-01

Abstract: mosfet 2sk
Contextual Info: 2SK1015-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V r,ss = ± 30V Guarantee

2SK960

Abstract: 50N60 2SK960-MR
Contextual Info: 2SK960-MR FUJI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES Outline Drawings • Hiijh speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hi<|h voltage ■Applications • Switching regulators

cc fuji

Abstract: 2SK2691-01R
Contextual Info: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2691-01R SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME DRAWNl CHECKED, I - APPROVED Fuji Electric Co.,Ltd. 1/0 Y 0?57-R-004a 1 1.Scope This specifies Fuji Power MOSFET 2SK2691-01R

DIODE V97

Contextual Info: International IOR Rectifier PD 9.1571 IRG4RC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode .

1da sot

Abstract: TZ404 TZ404BD TZ404CY
Contextual Info: T OP AZ SEMICONDUCTOR OSE D g Ü0G1ÜÛ7 5 | “ - T" 3S -2 S - - TI4G4 SEMICONDUCTOR N-CHANNiL EMHA^Ci^iNT-E^ODE D-MOS FIT ULTRA HIGH-SPEED LOW-COST SWITCH ORDERING INFORMATION TZ404BD TO-92 Plastic Package SOT-89 Surface Mount Package Description

Contextual Info: International PD - 9.1131A Rectifier IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: 2 SK 1 0 1 5-01 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET _ - F TT « r n I l S E - i r o m E o • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown

KSD1

Abstract: ksd1 180 TC9327F SVFP-80PIN KSD1 65 l293 pin configuration
Contextual Info: TOSHIBA TC9327F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9327F DTS MICROCONTROLLER DTS-21 The TC9327F is a 4-bit CMOS microcontroller for single-chip digital tuning systems, featuring a built-in 230-MHz prescaler, PLL, and LCD drivers.

Contextual Info: PD - 9.764 International @Rectifier IRGPH40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

transistor ge 703

Contextual Info: PD - 9.796A International ! or!Rectifier IRGBC30UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

Contextual Info: F U JI 2SK2755-01 N-channel MOS-FET 450V 0,45Q 18A 125W FAP-IIS Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VG S = ± 30V Guarantee Repetitive Avalanche Rated TO-3P 4.5

2sk mosfet

Abstract: 947-M 2sk 100a
Contextual Info: 2SK947-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES I Outline Drawings • Features • High speed switching • Low on-resistance 4 .5±02 032 / • No secondary breakdown 27±0 2 • Low driving power ÖÖ CM rO -H •H in D0®

P channel MOSFET 10A schematic

Abstract: N and P MOSFET
Contextual Info: 2SK1086-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S • O utline D raw ings ■ Features • High current • Low o n-resistance • No secondary breakd ow n • Low driving p ow er • High fo rw a rd T ran scon d u ctan ce

Contextual Info: 2SK947-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I S E R IE S I Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power ■Applications • UPS • DC-DC converters • General purpose power amplifier