2DI150D100 Search Results

Contextual Info: 2DI150D100 Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)1.0k V(BR)CBO (V)1.0k I(C) Max. (A)150 Absolute Max. Power Diss. (W)1.0k Maximum Operating Temp (øC) h(FE) Min. Current gain.100 @I(C) (A) (Test Condition)150

1DI400D-100

Abstract: 2DI100D-100 M105 1DI300D-100 2DI150D-100 2DI200D-100 2DI30D-100 2DI50D-100 2DI75D-100 M206
Contextual Info: 1000 volts class pow er transistor modules Term inals layout in w hich drive w iring and pow er w iring do not com e accross. S uited fo r m otor control applications w ith 380 to 440V volts inputs. Device type 2DI30D-100 2DI50D-100 2DI75D-100 2DI100D-100

1di200

Abstract: M105
Contextual Info: 1000 volts c la ss pow er tran sisto r m odules • T e r m in a ls la y o u t in w h ic h d riv e w ir in g a n d p o w e r w ir in g d o not c o m e a c c ro s s . • S u ite d for m o to r co n tro l a p p lic a tio n s w ith 380 to 440V v o lts in p u ts.

all type transistor equivalent

Abstract: 2DI100D-100 1DI400D-100 2DI30D-100 2DI50D-100 2DI75D-100 EV1234 EV1255 EV1274 EV1277
Contextual Info: Transistor M odules C O L LP IE R SEMICONDUCTOR INC MfiE J> • 82307*15 O O O lblE 141 *C 0 L -r-yb-y'S 1000 volts class power transistor m odules ■ • • • T w o p o w er tra n sisto rs and tw o free w h e e ls are built into one p ackage. A ll te rm in a ls are insulated fro m m ou nting plate.

1DI400D-100

Abstract: 1DI300D-100 2DI150D-100 M105 2DI100D-100 2DI200D-100 2DI50D-100 2DI75D-100 M206 1DI200A-120
Contextual Info: 1000 volts class power transistor modules • T e rm in a ls layo u t in w hich d rive w irin g and p o w er w irin g do not co m e accross. • S u ited fo r m o to r control app licatio n s w ith 380 to 440V volts inputs. Device type VcBO VcEO VcEX le cont.

Contextual Info: Transistor Modules COLLMER SEMICONDUCTOR I NC MñE D • 22307^5 QQOlblS 141 « C O L T V * -^ 1000 volts class power transistor modules ■T w o p o w e r tra n s is to rs and tw o free w h e e ls are b u ilt into o ne package. • A ll te rm in a ls are in su la te d fro m m o u n tin g plate.

1DI500A-030

Abstract: 2DI75S-050A EVK75-050
Contextual Info: C O L L PI E R SEMICONDUCTOR INC Mf i E D d d d i s 72 ?3S 'T -3 3 -2 ^ Power Darlington Modules « c o l s 200, 300 AND 500 VOLTS VCEO Device type VCBO Volts VCEO Volts (sus Volts Ic cont. Amps Pc Watts (perxstr) hre @ Ic min Amps. VCE Volts Switching time (max.)

2DI150D-100

Abstract: fuji transistor module power transistor "1000 a" transistor 1000V 2DI-150D-100 2DI150D "Power TRANSISTOR" transistor ac diode 1000V 2DI150D100
Contextual Info: 2DI150D-100 150A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 High Voltage 内蔵 Including Tree Wheeling Diode ﾌﾘｰﾎｲﾘﾝｸﾞﾀﾞｲｵｰﾄﾞ内蔵

all type transistor equivalent

Abstract: transistor e3 1DI300D-100 1DI400D-100 EV1255
Contextual Info: Transistor M odules C O L LP IE R SEMICONDUCTOR INC MfiE J> • 82307*15 O O O lblE 141 *C 0 L -r-yb-y'S 1000 volts class power transistor m odules ■ • • • T w o p o w er tra n sisto rs and tw o free w h e e ls are built into one p ackage. A ll te rm in a ls are insulated fro m m ou nting plate.