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    2G NAND MCP Search Results

    2G NAND MCP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54H30J Rochester Electronics LLC NAND Gate Visit Rochester Electronics LLC Buy
    DM74LS22J Rochester Electronics LLC DM74LS22 - NAND Logic Gate Visit Rochester Electronics LLC Buy
    54H30J/C Rochester Electronics LLC 54H30 - NAND Gate Visit Rochester Electronics LLC Buy
    946HM/C Rochester Electronics LLC 946 - NAND Gate Visit Rochester Electronics LLC Buy
    MC2101F Rochester Electronics LLC MC2101F - Dual NAND Logic Gate Visit Rochester Electronics LLC Buy

    2G NAND MCP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    movinand

    Abstract: movinand DECODER 1g nand mcp movi nand S3C49VCX03 16G nand flash S3C49v 8G nand 16G nand MCP NAND
    Text: MOVI NAND Code Information 1/3 Last Updated : November 2008 KMXXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 1. Memory (K) 9 10 11 12 13 14 15 16 17 18 4. MoviNAND Density & Vcc & Org. & BB Co de 2. MOVI NAND/MCP : M moviNAN D Den NAND Den Ce ll 3. Small Classification


    Original     		PDF

    SK6626

    Abstract: S3C49RAA01 MARKING CODE 16G S3C49VCX03 movinand DECODER error free nand movinand NAND 32G 2g nand mcp 64G nand
    Text: CTL_embedded NAND Code Information 1/3 Last Updated : November 2008 KLXXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory (K) 8. VCC & VCCQ 2. MOVI NAND/MCP : L CTL : Controller 3. NAND Function E : Error Free NAND S : eSSD C : Cartridge SIP


    Original     		PDF

    Micron 512MB nand FLASH

    Abstract: 64gb NAND chip micron nand flash chip 8gb Micron 1GB NAND FLASH nand flash 32gb x16 1g nand DDR mcp MCP NAND DDR MICRON mcp micron nand flash chip 16gb MT29C
    Text: MCP/PoP Part Numbering System Micron's part numbering system is available at www.micron.com/numbering Multichip Packages MT 29C 1G 12M A B A A Micron Technology IT ES Production Status AG = 16Gb BG = 32Gb CG = 64Gb DG = 128Gb LPDRAM Density 56M = 256Mb 24M = 1Gb


    Original     		PDF 128Gb 256Mb 512Mb 152Mb 640Mb 128Mb Micron 512MB nand FLASH 64gb NAND chip micron nand flash chip 8gb Micron 1GB NAND FLASH nand flash 32gb x16 1g nand DDR mcp MCP NAND DDR MICRON mcp micron nand flash chip 16gb MT29C

    MT29C2G24MAKLAJG-75 IT

    Abstract: MT29C2G24MAKLAjg JW256
    Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components


    Original     		PDF 168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29C2G24MAKLAJG-75 IT MT29C2G24MAKLAjg JW256

    MT29C2G24m

    Abstract: MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD
    Text: Preliminary‡ 168-Ball NAND Flash and LP-DRAM PoP TI-OMAP MCP Features NAND Flash and LP-DRAM 168-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


    Original     		PDF 168-Ball 09005aef83071038/PDF: 09005aef83070ff3 168ball MT29C2G24m MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD

    MT29C2G24MAKLA-XIT

    Abstract: mt29C2G24
    Text: MS29C2G24MAKLA1-XX 2Gb NAND FLASH x16 / 1Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION  Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.


    Original     		PDF MS29C2G24MAKLA1-XX MT29C2G24MAKLA-XIT" MT29C2G24MAKLA-XIT mt29C2G24

    MT29F2G16AB

    Abstract: MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET
    Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components


    Original     		PDF 168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29F2G16AB MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET

    MT29C1G24MADLAJA-6

    Abstract: Micron 512MB nand FLASH MT29C2G24MAKLAJA-6 Micron 512MB nand FLASH mcp Flash MCp nand DRAM 137-ball JW190 137-Ball MCP NAND sDR mt29c 1g nand DDR mcp
    Text: Preliminary‡ Micron Confidential and Proprietary 137-Ball NAND Flash with LP-DRAM MCP Features NAND Flash with LP-DRAM 137-Ball Multiple-Chip Package MCP MT29CxGxxMAxxxJA Current Production Part Numbers: Table 1 on page 2 Features Figure 1: • All-Micron NAND Flash and LP-DRAM


    Original     		PDF 137-Ball MT29CxGxxMAxxxJA 09005aef82ff4431 09005aef82ff448c 137ball MT29C1G24MADLAJA-6 Micron 512MB nand FLASH MT29C2G24MAKLAJA-6 Micron 512MB nand FLASH mcp Flash MCp nand DRAM 137-ball JW190 MCP NAND sDR mt29c 1g nand DDR mcp

    1 gb micro sd card

    Abstract: THNS512GG8BB FBGA153 SDXC THNS128GG4BB sata ssd controller msata THNSNB062GMSJ FBGA169 THNSNB062GMCJ
    Text: 製品カタログ 2010-3 東芝半導体 製品カタログ メモリ・ストレージデバイス h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / メモリ・ストレージデバイス メモリ・ストレージデバイス 東芝は1984年にフラッシュメモリを世界で初めて開発しその後開発したNAND型フラッシュメモリでは最先端の技術、


    Original     		PDF 512Mbit4Gbit BCJ0092A 1 gb micro sd card THNS512GG8BB FBGA153 SDXC THNS128GG4BB sata ssd controller msata THNSNB062GMSJ FBGA169 THNSNB062GMCJ

    MT29F1G08ABCHC

    Abstract: mt29c MT29F4G16A mt29f1g08 MT29F1G08ABCHC-ET MT29C1G12 MT29F2G16ABDHC MT29F4G16AB MT29F1G16ABCHC-ET micron lpddr
    Text: Preliminary‡ 152-Ball NAND Flash and Mobile LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 152-Ball Package-on-Package (PoP) Combination Memory (TI OMAP ) MT29C Family Current production part numbers: See Table 1 on page 3 Features Figure 1:


    Original     		PDF 152-Ball MT29C 152-Ball 09005aef8326e5ac 09005aef8326e59a 152ball_ MT29F1G08ABCHC MT29F4G16A mt29f1g08 MT29F1G08ABCHC-ET MT29C1G12 MT29F2G16ABDHC MT29F4G16AB MT29F1G16ABCHC-ET micron lpddr

    MT29C1G12

    Abstract: mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1
    Text: Preliminary‡ 152-Ball NAND Flash and LP-DRAM PoP TI OMAP MCP Features NAND Flash and LP-DRAM 152-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


    Original     		PDF 152-Ball 409ng 09005aef8326e5ac 09005aef8326e59a 152ball_ MT29C1G12 mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    reset nand flash HYNIX

    Abstract: hynix mcp hynix nand PROGRAMMING hynix NAND ECC hynix nand spare area hynix nand Hynix E NAND hynix nand 2G nand flash HYNIX 1gb toshiba mcp nand
    Text: S30MS01GP and 1Gbit NAND Comparison Application Note by Chris Brewster 1. Introduction Spansion ORNAND devices are designed to have either an NOR or NAND interface. ORNAND serves as a complement to XIP NOR flash memory if NOR interface is chosen; it serves as replacement for raw NAND for


    Original     		PDF S30MS01GP reset nand flash HYNIX hynix mcp hynix nand PROGRAMMING hynix NAND ECC hynix nand spare area hynix nand Hynix E NAND hynix nand 2G nand flash HYNIX 1gb toshiba mcp nand

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    153-FBGA

    Abstract: 153FBGA 153Ball FBGA samsung "nand flash" derating MCP LPDDR 1Gb 512Mb K522H1HACF-B050 k522h1 MCP 256M nand samsung mobile DDR MCP 1Gb nand 512mb dram 130 2gb nand mcp
    Text: Rev. 1.0, Oct. 2010 K522H1HACF-B050 MCP Specification 2Gb 128M x16 NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K522H1HACF-B050 A10/AP 153-FBGA 153FBGA 153Ball FBGA samsung "nand flash" derating MCP LPDDR 1Gb 512Mb K522H1HACF-B050 k522h1 MCP 256M nand samsung mobile DDR MCP 1Gb nand 512mb dram 130 2gb nand mcp

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    K524G2GACB-A050

    Abstract: samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr
    Text: K524G2GACB-A050 MCP MEMORY MCP Specification 4Gb NAND Flash + 2Gb Mobile DDR INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K524G2GACB-A050 A10/AP K524G2GACB-A050 samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr

    samsung xsr

    Abstract: FAT32 SAMSUNG NAND FTL XSR Porting Guide onenand xsr samsung tfs4 Nucleus RTOS 0x00000025 samsung sector remapper SAMSUNG NAND FLASH TRANSLATION LAYER
    Text: TFS4 v1.6 Porting Guide 2006.05.29, Version 1.6 Note TFS4 is independent of XSR. Here we assume that XSR or MMC or HSMMC host device driver is already ported to your target system. This TFS4 porting guide covers only TFS4 porting procedure, neither XSR nor MMC (or HSMMC) host device driver.


    Original     		PDF agreement1250 samsung xsr FAT32 SAMSUNG NAND FTL XSR Porting Guide onenand xsr samsung tfs4 Nucleus RTOS 0x00000025 samsung sector remapper SAMSUNG NAND FLASH TRANSLATION LAYER

    qualcomm nand

    Abstract: KBE00500AM-D437 SAMSUNG MCP KBE00500AM NAND FLASH DDP MCP Specification UtRAM Density 2gb nand mcp 137FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability
    Text: Target MCP MEMORY KBE00500AM-D437 MCP Specification 1Gb NAND Flash Memory * 2 + 512Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KBE00500AM-D437 512Mb KBE00500AM-D437 SG2002063-01 qualcomm nand SAMSUNG MCP KBE00500AM NAND FLASH DDP MCP Specification UtRAM Density 2gb nand mcp 137FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    KBY00

    Abstract: LPDDR 8Gb 137FBGA KBY00U00VA MCP 256M nand samsung mobile DDR samsung "nand flash" derating SAMSUNG MCP sdram 2g "4bit correction" DQ28D
    Text: Rev. 1.0, Jul. 2010 KBY00U00VA-B450 MCP Specification 8Gb DDP 512M x16 NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF KBY00U00VA-B450 A10/AP KBY00 LPDDR 8Gb 137FBGA KBY00U00VA MCP 256M nand samsung mobile DDR samsung "nand flash" derating SAMSUNG MCP sdram 2g "4bit correction" DQ28D