2H SMD TRANSISTOR Search Results

a56 transistor smd

Abstract: smd marking A56 transistor SMD 2h transistor smd A55 a56 transistor smd datasheet SMD TRANSISTOR MARKING 2h A56 smd transistor CMBTA55 CMBTA56 br a55
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

a56 transistor smd

Abstract: SMD TRANSISTOR MARKING 2h transistor SMD 2h a56 transistor a56 transistor smd datasheet marking .A55 transistor A55 smd marking A56 CMBTA55 CMBTA56
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

BC849

Abstract: BC849B BC849C BC850 BC850B BC850C
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS

2f bc850

Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G

A56 smd transistor

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H

smd marking A56

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transisto r Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

smd transistor 2g

Abstract: MARKING 25 SMD PNP TRANSISTOR smd transistor 24 sot23 SMD transistor code 24 transistor SMD 2h TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 50 TRANSISTOR SMD CODE PACKAGE SOT23 smd transistor marking code 24 SMD TRANSISTOR MARKING DE
Contextual Info: SMD General Purpose Transistor PNP MMBTA55/MMBTA56 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package

MMBTA55

Abstract: MMBTA56
Contextual Info: Transistors IC SMD Type Driver Transistors MMBTA55,MMBTA56 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT-23 package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

COIL metal detector schematic

Abstract: SMD HF transistor transistor smd CF rs smd transistor NF NV SMD TRANSISTOR B82462-4683K TDE0160 TDE0160FP electronic schematic SMD TRANSISTOR ALL 04
Contextual Info: STEVAL-IFS004V1 Metal body proximity detector based on the TDE0160 Data Brief Features • Supply voltage: +4 V to +36 V ■ Supply current: <1.2 mA ■ Loss resistance: 5 kΩ to 50 kΩ ■ Oscillator frequency: <1 MHz ■ Output transistor: IC= 20 mA, VCE sat < 1.1 V

TLP181

Abstract: opto TLP181 tlp521 SMD 6 pin TRANSISTOR SMD CODE 1A TLP521-1A tlp181 opto TLP181-GB TLP521 3750VRMS TLP521-2A
Contextual Info: OPTOELECTRONICS PHOTO COUPLERS OPTO-ISOLATORS SMD DIL TRANSISTOR OUTPUT DIL PACKAGE Manf. Part No. & Order Code CNY17-2 CNY17-3 4N25 4N26 4N35 4N36 PIN OUT A Manufacturer Channels Vishay-Telefunken 1 ch. Toshiba 1 ch. 1 6 2 5 3 4 min. C.T.R. typ. 63% 100%

Contextual Info: STEVAL-IFS004V1 Metal body proximity detector based on the TDE0160 Data Brief Features • Supply voltage: +4 V to +36 V ■ Supply current: <1.2 mA ■ Loss resistance: 5 kΩ to 50 kΩ ■ Oscillator frequency: <1 MHz ■ Output transistor: IC= 20 mA, VCE sat < 1.1 V

Transistor SMD 5A6V

Contextual Info: 1 CC-E Insulation type DC-DC converter Low Voltage Directive • Features R: Horizontally-mounted SMD type FS Vertically-mounted SIP type Symbol for number of outputs S: Single output, D: Dual outputs Nominal output voltage 03: 3.3V, 05: 5V, 12: 12V Nominal input voltage

2GM smd

Abstract: SMD 2GM MMBTA55 MMBTA56
Contextual Info: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBTA56 product family SOT-23 Plastic-Encapsulate Biploar Transistors

MMBTA55

Abstract: MMBTA56 2GM smd SMD 2GM
Contextual Info: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBTA55 product family SOT-23 Plastic-Encapsulate Biploar Transistors

smd code marking 2A sot23

Abstract: MARKING CODE 3b sot-89 SOT-89 marking 3b marking code SS SOT23 sot-23 npn marking code cr sot143 Marking code 5B marking .H2 sot89 SOT-89 marking 3f 3B SOT-89 smd 2A sot23
Contextual Info: GENERAL PURPOSE SMD PNP TRANSISTORS DESCRIPTION • Philips Components general purpose transistors combine the highest quality standards with state-of-the-art production equipment to fulfill the need for generic, low-cost devices. These transistors provide a broad selection

CC1R5-2405

Abstract: CC10-xxxxSx-E CC6-2405Sx-E 0505sx rc 2403sx CC3-0505SF-E CSA22 EA33-5
Contextual Info: 1/21 Conformity to RoHS Directive DC to DC Converters Insulated Type, Ultra Compact Size, 1.5 to 25W Output, 5-year Warranty Period CC-E Series FEATURES • Compact size(almost half floor space of existing product). • No tantalum capacitor and no aluminum electrolytic capacitor

E5 SMD Transistor

Abstract: CC10-2405SF-E CC1R5-2405 cc6-2403sf-e cc10-2403sf-e CC1R5-1212SF-E CC1R5-0503SF-E CC1R5-1203SF-E CC1R5-2403SF-E CC3-0503SF-E
Contextual Info: 1/17 Conformity to RoHS Directive DC to DC Converters Insulation Type, Ultra Compact Size, 1.5 to 25W Output, 5-year Warranty Period CC-E Series FEATURES • Compact size(almost half floor space of existing product). • No tantalum capacitor and no aluminum electrolytic capacitor

CC10-2405SF-E

Abstract: 429191ra CC1R5-0503SF-E CC1R5-0505SF-E CC1R5-0512SF-E CC1R5-1203SF-E CC1R5-1205SF-E CC1R5-1212SF-E CC1R5-2403SF-E CC10-2412DF-E
Contextual Info: 1/17 Conformity to RoHS Directive DC to DC Converters Insulation Type, Ultra Compact Size, 1.5 to 25W Output, 5-year Warranty Period CC-E Series FEATURES • Compact size(almost half floor space of existing product). • No tantalum capacitor and no aluminum electrolytic capacitor

smd transistor 2y

Abstract: CDIP2-T16 CDIP2-T16 DIMENSIONS cdfp4-f16 3Y SMD 2h smd transistor
Contextual Info: ACS257MS S MAEESS Radiation Hardened Quad 2-Input M ultiplexer with Three-State Outputs November 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS257MS is a Quad 2-Channel multiplexer which selects four bits of data from one of two

Contextual Info: ACS257MS Semiconductor Radiation Hardened Quad 2-Input M ultiplexer with Three-State Outputs November 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS257MS is a Quad 2-Channel multiplexer which selects four bits of data from one of two

Contextual Info: ACS253MS Semiconductor Radiation Hardened Dual 4-Input Multiplexer with Three-State Outputs November 1997 Features Description • QM L Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS253MS is a Dual 4-Channel Mul­ tiplexer having two common binary control inputs for selecting 1

RF3-50

Abstract: POWER456
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher

ADP1043AFB100EVALZ

Abstract: Analog Devices smd transistor 43B AD1043 CAP SMD 0.47uF 50V 10 CERAMIC X7R 0805 GCM21BR71E105KA56L 61h SMD Transistor AIR FLOW DETECTOR FULL REPORT using led transistor smd 1fh fdd3672
Contextual Info: ADP1043A 100 Watt Evaluation Kit ADP1043AFB100EVALZ PRD1266 FEATURES 100W Full Bridge Topology Advanced Voltage mode Control with integrated Volt-Second Balance I2C serial interface to PC Software GUI Programmable digital filters 7 PWM outputs including Auxiliary PWM

CMPA801B025

Abstract: CMPA801B025F x-band mmic 3.5 DC Jack
Contextual Info: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher