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CMPA801B025 Price and Stock

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MACOM CMPA801B025P IC AMP RADAR 8.5GHZ-11GHZ 440216
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DigiKey	CMPA801B025P	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
MACOM CMPA801B025F IC RF AMP 8.5GHZ-11GHZ 440208
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DigiKey	CMPA801B025F	Tray			75	1 - 10 - 100 $481.32626 1000 $481.32626 10000 $481.32626	Buy Now
MACOM CMPA801B025F-AMP CMPA801B025F DEV BOARD WITH HEMT
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DigiKey	CMPA801B025F-AMP	Box				1 - 10 - 100 - 1000 - 10000 -	Buy Now
MACOM CMPA801B025F-TB RF & MW AMPLIFIER EVALUATION BOARD/DESIGNER KIT
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Richardson RFPD	CMPA801B025F-TB				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Wolfspeed CMPA801B025P RF & Microwave
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Vyrian	CMPA801B025P		938			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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CMPA801B025 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
CMPA801B025F		Cree/Wolfspeed	RF/IF and RFID - RF Amplifiers - IC RF AMP 8.5GHZ-11GHZ 440208		Original	PDF	2.08MB
CMPA801B025F-AMP		Wolfspeed	CMPA801B025F DEV BOARD WITH HEMT		Original	PDF	2.26MB
CMPA801B025F-TB		Cree/Wolfspeed	RF/IF and RFID - RF Amplifiers - IC RF AMP 8.5GHZ-11GHZ MODULE		Original	PDF	2.08MB

CMPA801B025 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F	PDF
Contextual Info: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	CMPA801B025D CMP801B025D CMPA801B025D	PDF
CMPA801B025D Contextual Info: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	CMPA801B025D CMP801B025D CMPA801B025D	PDF
CMPA801B025 Abstract: X-band Internally Matched Power GaN HEMTs Contextual Info: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 X-band Internally Matched Power GaN HEMTs	PDF
Contextual Info: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F	PDF
CMPA801B025D Abstract: CMPA801B025 Contextual Info: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	CMPA801B025D CMP801B025D CMPA801B025D CMPA801B025	PDF
CMPA801B025 Abstract: CMPA801B025F x-band mmic 3.5 DC Jack Contextual Info: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 x-band mmic 3.5 DC Jack	PDF
CMPA801B025F Abstract: CMPA801B025 cree rf 1B025F package 440208 cree rf cmpa801b025f Contextual Info: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 cree rf package 440208 cree rf cmpa801b025f	PDF
CMPA801B025D Contextual Info: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	CMPA801B025D CMP801B025D CMPA801B025D	PDF