2K 8 EPROM Search Results

A1051

Contextual Info: TMS27C291, TMS27C292 16.384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ-ONLY MEMORY SEPTEM BER 1986 —REVISED APRIL 1988 Organization . . . 2K x 8 J AND N PA C KA G E Pin Compatible with Existing 2K x 8 Bipolar/High-Speed CM OS EPROMs

cy7c245a-35dmb

Abstract: 7C245A CERAMIC LEADLESS CHIP CARRIER CY7C245A CY7C245A35DMB CY7C245A-35PC C245A-1 CY7C245A-25DMB
Contextual Info: 1CY 7C24 5A CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description • Windowed for reprogrammability • CMOS for optimum speed/power The CY7C245A is a high-performance, 2K x 8, electrically programmable, read only memory packaged in a slim 300-mil

aS3131

Abstract: u2331
Contextual Info: CY7C245A P YP: V « *1 i. X - 2K x 8 Reprogrammable Registered PROM Features Functional Description • Windowed for reprogrammability • CMOS for optimum speed/power The CY7C245A is a high-performance, 2K x 8, electrically pro­ grammable, read only memory packaged in a slim 300-mil

HM-6617

Abstract: 6617 88-3-AC
Contextual Info: HM-6617/883 2K x 8 CMOS PROM June 2004 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6617/883 is a 16,384-bit fuse link CMOS PROM in a 2K word by 8-bit/word format with “Three-State” outputs.

1N914

Abstract: FDIP24W M2716
Contextual Info: M2716 NMOS 16K 2K x 8 UV EPROM 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM

LIA8

Abstract: 8Z-2
Contextual Info: w m u m m /k m MX27L256 . r ia MACRONIX, INC. 2K x 8 LOW VOLTAGE OPERATION CMOS EPROM 25BK-BIT FEATURES • • • • 32K x 8 organization Wide Voltage range, 2.7V to 3.6V DC +12.5V programming voltage Fast access time: 120/150/200/250 ns Totally static operation

Contextual Info: MN101C35D Type MN101C35D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package QFP100-P-1818B *Lead-free Minimum Instruction Execution Time 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 125 µs (at 2.2 V to 5.5 V, 32 kHz)* * The lower limit for operation guarantee for EPROM built-in type is 2.7 V.

Contextual Info: MN101C38A , MN101C38C Type MN101C38A MN101C38C 32 K 48 K 1.5 K 2K ROM x× 8-bit External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Lead-free, LQFP100-P-1414 *Lead-free Minimum Instruction Execution Time

87C748

Abstract: SU00299 80C51 83C748 P83C748EBP
Contextual Info: INTEGRATED CIRCUITS 83C748/87C748 80C51 8-bit microcontroller family 2K/64 OTP/ROM, low pin count Preliminary specification Supersedes data of 1998 Apr 23 IC20 Data Handbook Philips Semiconductors 1999 Apr 15 Philips Semiconductors Preliminary specification

Contextual Info: MN101C38A , MN101C38C Type MN101C38A MN101C38C 32 K 48 K 1.5 K 2K ROM x× 8-bit External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Lead-free, LQFP100-P-1414 *Lead-free Minimum Instruction Execution Time

BACT19

Abstract: PIC16C432 24cxx programmer circuit and software UV 471 74AS04 AN552 AN556 AN729 DS30000 pin configuration transistor D313
Contextual Info: PIC16C432 OTP 8-Bit CMOS MCU with LIN bus Transceiver Devices included in this Data Sheet: • PIC16C432 Ceramic DIP, SSOP, PDIP High Performance RISC CPU: PIC16C432 • • • • Program Memory RAM Data Memory 2K x 14 128 x 8 Interrupt capability 16 special function hardware registers

27c eeprom

Abstract: 27C291 74TTL
Contextual Info: 0^1755 DG77HS TMS27C291, TMS27C292 16,384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ ONLY MEMORY SEPTEMBER 1988-R EV ISED APRIL 1988 • Single 5-V Power Supply • Pin Compatible with Existing 2K x 8 BIpolar/High-Speed CMOS EPROMs

EPROM sop 40

Contextual Info: D IN IF O M Ä T Q Ü IN ] m A M X 2 7 C 8 1 O O MACRONIX, INC. 8M-BIT 1 M x 8/5*1 2K x IB CMOS EPROM FEATURES • • • • • • • MASK ROM pin out compatible Package type: - 42 pin ceramic DIP - 42 pin plastic DIP - 44 pin SOP 1M x 8 or 512K x 16 organization

TRIAC bt 824

Abstract: JRC 072 D OTS-28-0.65-01 AN899 Enplas OTS ST6265 MICROCONTROLLER ST6215C 3.6v jp nicd battery ST6225C ST62T25C
Contextual Info: ST6215C/ST6225C 8-BIT MCUs WITH A/D CONVERTER, TWO TIMERS, OSCILLATOR SAFEGUARD & SAFE RESET • ■ ■ ■ ■ ■ ■ Memories – 2K or 4K bytes Program memory OTP, EPROM, FASTROM or ROM with read-out protection – 64 bytes RAM Clock, Reset and Supply Management

COP822C

Abstract: SMD CODE G7 COP620C COP622C COP640C COP820C COP840C COP920C COP922C national semiconductor COP8 application note
Contextual Info: COP820C/840C Family 8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory General Description Note: COP8SA devices are instruction set and pinout compatible supersets of the COP800C Family devices, and are replacements for these in new designs when possible.

EEPROM 2816 CMOS

Abstract: DS1220 DS1220AB DS1220AB-100 DS1220AB-120 DS1220AD ICC01
Contextual Info: DS1220AB/AD 16k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles

27c512-20fa

Abstract: 27C512 27C512-12 AT 270512 27c512-15n 27C512-15FA eprom 27C512 28pin 27C512-1 27CS12-20 m 270512
Contextual Info: Philips Components-Signetics Document No. 8 53-1360 27C512 ECN No. 01042 51 2K -b it C M O S E P R O M 6 4 K x 8 Date of Issue Novem ber 12, 1990 Status Product Specification Memory Products PIN CONFIGURATION DESCRIPTION FEATURES Philips Com ponents-Signetics 27C 512

ldr 6k

Abstract: 200H 400H MDT2030
Contextual Info: MDT2030 AE 150 µs, 20 ms, 40 ms, 80 ms 1. General Description u This ROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve high programmable prescaler u speed, small size, the low power and high noise On chip memory includes 2K words EPROM, and

Contextual Info: DS1220AB/AD DALLAS DS1220AB/AD ì&K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT 10 years m inimum data retention in the absence of external power Data is autom atically protected during power loss Directly replaces 2K x 8 volatile static RAM or

Contextual Info: CY7C291A CY7C292A/CY7C293A 'W CYPRESS = SEMICONDUCTOR Reprogrammable 2K x 8 PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 2 0 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)

Contextual Info: FS98O21 Data Sheet 8-bit MCU with 2k program EPROM, 128-byte RAM, 1 low noise OPAMP, 6-ch 14-bit ADC, 4 x 12 LCD driver and RTC Rev. 1.0 Aug. 2005 Fortune Semiconductor Corp. FS98O21-DS-10_EN CR-004 FS98O21 Taipei Office： 28F, No.27, Sec. 2, Zhongzheng E. Rd.,

Contextual Info: FS9821 Data Sheet 8-bit MCU with 2k program EPROM, 128-byte RAM, 1 low noise OPAMP, 6-ch 14-bit ADC, 4 x 12 LCD driver and RTC Rev. 2.3 Aug 2005 Fortune Semiconductor Corp. FS9821-DS-23_EN CR-004 FS9821 Taipei Office： 28F, No.27, Sec. 2, Zhongzheng E. Rd.,

TYPE EVF 8222 E

Abstract: BCD to Seven Segment 4055 TYPE EVF 8221 - E FC-135 PART MARKING tda 8342 Diagram of ADSL CPE Analog Front End ADN 1524 Marking R192 transistor bsn 274 TYPE EVF 8222 - E
Contextual Info: ST92163 8/16-BIT FULL SPEED USB MCU FOR COMPOSITE DEVICES WITH 16 ENDPOINTS, 20K ROM, 2K RAM, I2C, SCI, & MFT DATASHEET • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Internal Memories: 20 Kbytes ROM/EPROM/ OTP, 2 Kbytes RAM

rf traNsmitter receiver 12mhz

Abstract: TDA 8223 A serial analog digital converter scl sda 8251 timer 5.5v 1.0f tda series class d QFP64 ST92163 ST92163E tda 8441
Contextual Info: ST92163 8/16-BIT FULL SPEED USB MCU FOR COMPOSITE DEVICES WITH 16 ENDPOINTS, 20K ROM, 2K RAM, I2C, SCI, & MFT PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Internal Memories: 20 Kbytes ROM/EPROM/ OTP, 2 Kbytes RAM