DS1220 Search Results

2816 eeprom

Abstract: eeprom 2816 1220AD AB-100 DS1220 DS1220AB DS1220AD 1220AB 2716 eeprom A6022-3
Contextual Info: DS1220AB/AD 16k Nonvolatile SRAM !• DALLAS nr m m im m m m m t com PIN A S S IG N M E N T FEATU R ES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 10 years minimum data retention in the absence of external power Data is automatically protected during power

2816 eeprom

Abstract: eeprom 2816 2716 eprom RAM 2816 DS1220Y dallas 2716 eeprom 2716 2k eprom retention 2816 eprom sram 2k x 8 eeprom 2716
Contextual Info: DS1220Y DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of externa! power 1 24 Aö 2 23 A5 3 22 A4 4 21 A3 5 20 A2 6 19 A1 7 18 A0 8 17 • Read and write access times as fast as 100 ns

CI EEPROM 2816

Abstract: eeprom 2816 DS1220Y-200IND 2716 IC DATA SHEET 2816 eeprom how to read Maxim date code DS1220Y DS1220Y-100 DS1220Y-100IND DS1220Y-120
Contextual Info: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

CI EEPROM 2816

Abstract: CI EPROM 2816 DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas am/2816 eprom
Contextual Info: D S 1220Y DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or EEPROM A7 1 1 24 1 V cc A6

2816 eeprom

Abstract: EEPROM 2816 CMOS DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 CI EEPROM 2816
Contextual Info: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

2816 eeprom

Abstract: CI EEPROM 2816 DS1220Y-120 DS1220Y DS1220Y-100 DS1220Y-150 DS1220Y-200 2716 eprom
Contextual Info: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

Contextual Info: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

DS1220

Abstract: DS1220AB DS1220AB-100 DS1220AB-120 DS1220AD DS1220AD-100 DS1220AD-120 ICC01 2716 eprom
Contextual Info: DS1220AB/AD 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

1220Y

Abstract: DS1220
Contextual Info: DS1220Y DALLAS SEM ICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Datais automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

Contextual Info: DS1220AB/AD DALLAS SEMICONDUCTOR D S1220A B /A D 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 1 ' 24 1 Vcc • Data is automatically protected during power loss A6 • 23 1 A8 A5 1 3 22 1

Contextual Info: DS1220AB/AD DALLAS SEMICONDUCTOR DS1220AB/AD 16K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data retention in the absence of V qc • Data is automatically protected during power loss 24 1 Vcc A6 1 2 23 1 A8 A4 1 4 CM CM CO A5 •1 • Directly replaces 2K x 8 volatile static RAM or

Contextual Info: DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SR AM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 | 1 • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

2816 eeprom

Abstract: eeprom 2816 CI EEPROM 2816 DSI220Y DS1220Y-200 DALLAS 2816 eprom RAM 2816 DS1220 DS1220Y DS1220Y-100
Contextual Info: !• DALLAS n r mmimmmmm DS1220Y 16k Nonvolatile SRAM t com PIN ASSIGNMENT FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

EEPROM 2816 CMOS

Abstract: DS1220 DS1220AB DS1220AB-100 DS1220AB-120 DS1220AD ICC01
Contextual Info: DS1220AB/AD 16k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles

Contextual Info: DS1220AB/AD 16k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

2816 eeprom

Abstract: CI EEPROM 2816 eeprom 2816 RAM 2816 2816 eprom DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200
Contextual Info: DS 1220Y DALLAS SEMICONDUCTOR FEATURES DS1220Y 16K N onvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 1 < • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

CI EEPROM 2816

Abstract: 2816 eeprom eeprom 2816 dallas date code DS1220AD DS1220AB DS1220AD 2716 EPROM DS1220Y dallas d6122
Contextual Info: DS1220AB/AD DALLAS SEMICONDUCTOR CORP 50E D • DALLAS SEMICONDUCTOR Ebl413D 000Mb34 b I DS1220AB/AD 16K Nonvolatile SRAM 7^ FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

CI EEPROM 2816

Abstract: eeprom 2816 2816 eprom EEPROM 2816 CMOS 2816 eeprom DS1220Y-200 DALLAS DS1220 DS1220Y DS1220Y-100 DS1220Y-120
Contextual Info: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power

2716 eprom

Abstract: 2816 eeprom eeprom 2816 2716 eprom datasheet CI EEPROM 2816 eprom 2716 RAM 2816 2816 eprom DS1220 icc01
Contextual Info: DS1220AB/AD DS1220AB/AD 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power

DS1220

Abstract: DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas
Contextual Info: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power

dallas 1220y

Abstract: 1220Y
Contextual Info: D S 1220Y DALLAS SEMICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN A S S I G N M E N T • 10 years m inimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

DS1220

Abstract: DS1220AB DS1220AB-100 DS1220AB-100IND DS1220AD DS1220AD-100 ICC01
Contextual Info: 19-5580; Rev 10/10 DS1220AB/AD 16k Nonvolatile SRAM www.maxim-ic.com FEATURES • •          PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

2816 eeprom

Abstract: CI EEPROM 2816 DS1220AB-100 DS1220AD DS1220AB DS1220AB-120 DS1220AB-150 DS1220AD-100 DS1220AD-120 ICC01
Contextual Info: DS1220AB/AD 16k Nonvolatile SRAM FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM

2816 eeprom

Abstract: CI EEPROM 2816 DS1220 DS1220AB DS1220AB-100 DS1220AD DS1220AD-100 DS1220AD-120 DS1220AD-150 DS1220AD-200
Contextual Info: DS1 220 A B /A D DALLAS DS1220AB/AD 16K Nonvolatile SRAM s e m ic o n d u c t o r FEATURES PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • Directly replaces 2K x 8 volatile static RAM or