2MBI Search Results

Contextual Info: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz Clock Cycle Time (tCK2)

intel 80196 microcontroller

Abstract: 68HC11 68HC12 68HC16 80C251 J1850 PLCC52 PQFP52 PSD913F2 PSD934F2
Contextual Info: PSD913F2 PSD934F2 PSD954F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD9xxF2 – 3.3 V±10% for PSD9xxF2-V ■ Up to 2Mbit of Primary Flash Memory (8 uniform

Contextual Info: 2MBI200N-060-03 IGBT Module 600V / 200A 2 in one-package Features • VCE sat classified for easy parallel connection · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier

Contextual Info: 2-Pack IGBT 1400V 300A 2MBI 300P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications

Contextual Info: Preliminary W28F321BT/TT 2MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide

W39L020

Contextual Info: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7 − DQ0.

A25L05PT

Abstract: A25L05PU 25L05P A25L05P A25L10P A25L20P 25L10P
Contextual Info: A25L20P/A25L10P/A25L05P Series 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Document Title 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Revision History History Issue Date

LH28F320BFHE-PBTLF1

Abstract: Flash Memory 32Mbit DQ15DQ0
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F320BFHE-PBTLF1 Flash Memory 2Mbit 2Mbitx16 (Model Number: LHF32FF1 Lead-free (Pb-free) Spec. Issue Date: October 15, 2004 Spec No: EL16X114 LHF32FF1 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

V54C3128164VAT

Contextual Info: V54C3128164VAT HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 8M X 16 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 16 MOSEL VITELIC PRELIMINARY 7PC 7 8PC System Frequency fCK 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3

Contextual Info: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz Clock Cycle Time (tCK2)

Contextual Info: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)

Contextual Info: V58C2128 804/404/164 SE HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 4 5 6 DDR500 DDR400 DDR333 7.5 ns 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns Clock Cycle Time (tCK3) 4ns 5ns

Contextual Info: V58C2128 804/404/164 SE HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 4 5 6 DDR500 DDR400 DDR333 7.5 ns 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns Clock Cycle Time (tCK3) 4ns 5ns

free motion DETECTOR CIRCUIT DIAGRAM

Abstract: motion DETECTOR CIRCUIT DIAGRAM pst5 sine wave pv inverter circuit diagram digital video signal processor IR motion detector MSM518221 QFP100-P-1420-0 TC90A11F toshiba "motion compensation"
Contextual Info: TC90A11F TO SHIBA TENTATIVE TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC90A11F MULTI SYSTEM 3DIM . DNR IC FOR VCR TC90A11F is the digital video signal processor, which reduces the noise on the playback video signal of VCR, with the external video memory IC (2Mbit FIFO type).

2MBI200N120

Contextual Info: 2MBI200N-120 IGBT Module 1200V / 200A 2 in one-package Features • High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines

Contextual Info: 2MBI200N-060-03 IGBT Module 600V / 200A 2 in one-package Features • VCE sat classified for easy parallel connection · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier

Contextual Info: 2-Pack IGBT 1400V 100A 2MBI 100PC-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications

a600g

Contextual Info: 2-Pack IGBT 1400V 150A 2MBI 150P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications

IC12V

Contextual Info: 2-Pack IGBT 1400V 100A 2MBI 100P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications

75P-140

Abstract: 2mbi 2MBI 75P-140
Contextual Info: 2-Pack IGBT 1400V 75A 2MBI 75P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications • High Power Switching

2mb1300n-060

Abstract: 2MB1300 2MB1300N 300n0
Contextual Info: FU JI 2-Pack IGBT 600 V 300 A 2MBI 300N-060 [lILMëüMlE IGBT MODULE N series Outline Drawing • Features • • • • • • Square RBSOA Low Saturation Voltage Less Total Power Dissipation Improved FWD Characteristic M inimized Internal Stray Inductance

Contextual Info: 2MBI200LB-060 2 ooa : Outline Drawings IG B T ^ E ^ a — ;i/ IGBT MODULE Features • H ig h • te fiS in ttE Low S p e e d S w it c h in g S a tu r a tio n V o lt a g e • S A i l - i r — f- i £ t i t ( M O S ^ — H 8 i a ) • ^ ¿ *3 . — ju ;< 'y S r —

AP 4750

Contextual Info: 2MBI50F-060 50A IGBT Outline Drawings IGBT MODULE | ¿ 3 .0 2-05-4 : Features • fe ta * n « /± 10.0 | 2 3.0 10.0 10.0 — Low Saturation Voltage • /± iE i!i (M O S -y — H H iS ) • Voltage Drive Variety of Power Capacity Series Tab ¡type terminals

2MBI100L-060

Abstract: elth
Contextual Info: 2MBI100L-060 iooa :± / < 7 — IG B T i^ - ^ U IG B T M O D U L E : Features •S ilT High Speed Switching . 'i • Low Saturation Voltage •KA t lt f — •i a. —)\>* <" j * r —i> Module Packaging i> HSc#t(MOS-y'— HH3I) High Input Impedance : Applications