2MBI200L120 Search Results

Contextual Info: 2MBI200L120 Transistors Half Bridge IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.2k V(BR)GES (V)20 I(C) Max. (A)200 Absolute Max. Power Diss. (W)1.6k‚ Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case.08

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

2MBI200L-120

Abstract: welding inverter 200A IGBT 200A 1200V
Contextual Info: 2MBI200L-120 200A IGBT Module 1200V / 200A 2 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 高速ｽｲｯﾁﾝｸﾞ High Speed Switching 電圧駆動(MOSｹﾞｰﾄ構造）Voltage Drive 低ｲﾝﾀﾞｸﾀﾝｽﾓｼﾞｭｰﾙ構造 Low Inductance Module Structure

wf vqe 24 d

Abstract: 2MBI200L-120 2MBI200L120 a92 tr S340G
Contextual Info: 2MBI200L-120 : Outline Drawings IGBT IG B T M O D U L E : Features • " J \ T - 's V High Speed Sw itching Voltage Drive • W ± W .W i >999 •fM a - - M U if i Lo w Inductance M odule Structure • • Applications • i — Inverter for Motor Drive > *< ~ ~ 9

D 92 M - 03 DIODE

Contextual Info: 2MBI200L-120 ^ = L — ÌV : Outline D r a w i n g s IGBT IG B T M O D U L E • 4 M : Fe atu re s • Ä S lx -f H ig h Speed S w itc h in g • WjESEBl Voltage Drive L o w In d u c ta n c e M o d u le S tru ctu re ■ • : Applications — 9 S E i i f f l - f > '< — 9

Contextual Info: m 22307^2 □ 0 D 3 ci cn 3Tb IGBT 1200 VOLT, F-SERIES MODULES • Low saturation voltage Device DUALS 2MBI25F-120 2MBI50F-120 2MBI75F-120 2MBI100F-120 2MBI150F-120 SINGLES 1MBI200F-120 1MBI300F-120 VcE sat V ge=15V Switching Time (Max.) lc Pc R th RTH VF

Contextual Info: 3 B IGBT MODULES Ratings and Specifications 600 volts class 6 in one-package IGBT m o d u les /H ig h speed sw itch in g L series • H ig h s p e e d s w it c h in g • V o lta g e d r iv e m e t h o d p e r m it s lo w p o w e r d r iv e Device type Q

1MBI30L-060

Abstract: 6MBI30FA-060 collmer igbt 2mbi200f 2mbi25f 1MBI50L-060
Contextual Info: SECOND GENERATION IGBT 600 VOLT, F-SERIES MODULES, PT TECHNOLOGY • Low saturation voltage Device Type DUALS 2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI300F-060 SINGLES V c es lc Pc VcE sat PerlGBT Volts Cont. Amps Watts Max. Volts

IGBT cross reference semikron eupec

Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

M607

Abstract: 6MBI50L-120
Contextual Info: /\°7 — y / W ^ / Power Devices 3 ft 1200 1200 volts class/High speed switching m £ V ces V ges Device type Ic Cont. Pc VCE sat (VQE-15V) (Min.) to (- ton Amps. ^sec. V o te Switching tíme (Max.) tf toff K ft Package Net mass Gram s Votts Volts Amps Watte

IGBT cross reference semikron eupec

Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

Contextual Info: IGBT 1200 VOLT, F-SERIES MODULES • Low saturation voltage Device VCE8 Type DU ALS 2MBI25F-120 2MBI50F-120 2MBI75F-120 2M BI100F-120 2MBI150F-120 SIN G LE S 1MBI200F-120 1MBI300F-120 lc Cont. Volt* Am ps 1200 1200 1200 1200 1200 25 50 75 100 150 1200 1200

1MBH65-090

Abstract: 1mbh60-090 2MBI50N-120 6MBI50FA-060 6MBI50L-120 2MBI75F-060 6MBI10L-060 1mbh 2mbi200f 2mbi25f
Contextual Info: IGBT MODULES Ratings and Specifications Alphanumerical index Type Page G roi No. ER ERD60-100 ERD65-090 40 40 Page G rou p No. 1 1 2M 2MBI25F-120 2MBI25L-120 43 41 8 4 2MBI50F-060 2MBI50F-120 2MBI50L-060 2MBI50L-120 2MBI50N-060 2MBI50N-120 42 43 40 41 44 44

IGBT FF 300

Abstract: M-604 M215 2MB125F-120 M116 collmer igbt 6MBI8F-120
Contextual Info: IGBT 1200 VOLT, F SERIES • Low saturation voltage Device type V ces Volts PC V ce sat V qe =15V Max. lc Switching time (max.) Pkg. R th R th to n to ft tf IGBT Diode Vf Max. Max. Amps usee. usee. usee. °C/W °C/W Volts usee 2.5 2.5 25 50 0.8 1.5 1.0 0.568