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    Fuji Electric Co Ltd 2MBI200U4B-120-50

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    Bristol Electronics 2MBI200U4B-120-50 24
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    Fuji Electric Semiconductors 2MBI200U4B-120-50

    IGBT MOD.DIODE DUAL 200A 1200V U SERIES
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    Ozdisan Elektronik 2MBI200U4B-120-50
    • 1 $139.68434
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    • 100 $133.0327
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    2MBI200U4B120 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2MBI200U4B-120 Fuji Electric IGBT MODULE Original PDF

    2MBI200U4B120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    2mbi200u4b-120-50

    Abstract: 2MBI200U4B-120 MT5F12959 12V 200A Relay ED-4701 2mbi200 MS5F6212
    Text: SPECIFICATION Device Name : IGBT MODULE RoHS compliant product Type Name Spec. No. : : 2MBI200U4B-120-50 MS5F6577 May. 11 ’06 K.Muramatsu May. 11 ’06 M.Watanabe T.Miyasaka K.Yamada MS5F6577 a 1 14 H04-004-07b R e v i s e d Date Classification May.-11 -’06


    Original     		PDF 2MBI200U4B-120-50 MS5F6577 H04-004-07b P9/14) H04-004-06b H04-004-03a 2mbi200u4b-120-50 2MBI200U4B-120 MT5F12959 12V 200A Relay ED-4701 2mbi200 MS5F6212

    2MBI200U4B-120

    Abstract: MT5F12959 2MBI200U4B-120 equivalent ED-4701 Type Fuji 2MBI200U4B-120 2mbi200U4B120
    Text: SPECIFICATION Device Name : Type Name : Spec. No. Feb. 09 ’05 S.Miyashita Feb. 09 ’05 T.Miyasaka K.Yamada : Y.Seki IGBT MODULE 2MBI200U4B-120 MS5F 6032 MS5F6032 1 13 H04-004-07b R e v i s e d Date Classification Feb.-09 -’05 Enactment Ind. Content R e c o r d s


    Original     		PDF 2MBI200U4B-120 MS5F6032 H04-004-07b H04-004-06b H04-004-03a 2MBI200U4B-120 MT5F12959 2MBI200U4B-120 equivalent ED-4701 Type Fuji 2MBI200U4B-120 2mbi200U4B120

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28

    2MBI450U4E-120

    Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
    Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！


    Original     		PDF max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120