2MBI800 Search Results

2MBI800UG-170

Abstract: ED-4701 MT5F12959 1600A 1700V
Contextual Info: SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI800UG-170 Spec. No. : MS5F 5924 Sep. 30 ’04 T.Nishimura Sep. 30 ’04 T.Miyasaka Y.Seki MS5F5924 1 13 H04-004-07b R e v i s e d Date Classification Sep.-30-’04 Enactment Ind. Content R e c o r d s

2MBI800U4G-170

Abstract: 800A SERIES 2mbi800 fuji igbt igbt 800A DC Motor control IGBT FUJI ELECTRIC IGBT CHIP 1700V
Contextual Info: 2MBI800U4G-170 IGBT Modules IGBT MODULE U series 1700V / 800A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply

2mbi800u4g-120

Abstract: 2mbi800
Contextual Info: / 2MBI800U4G-120 IGBT Modules IGBT MODULE U series 1200V / 800A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier

Contextual Info: / 2MBI800VG-170E IGBT Modules IGBT MODULE V series 1700V / 800A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier

Contextual Info: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

fuji igbt transistor modules

Abstract: 1mbi1200u fuji inverter LM 1MBI1600U4C-120 fuji transistor modules fuji bipolar transistor GTO thyristor diode fuji order number M143 1MBI1200
Contextual Info: High-power IGBT Modules for Industrial Use Takashi Nishimura Hideaki Kakiki Takatoshi Kobayashi 1. Introduction Power devices used in industrial-use high capacity inverter system applications are predominately GTO gate turnoff thyristors, which easily handle high

2MBI800U4G-120

Abstract: ED-4701 MT5F12959 2mbi800
Contextual Info: DATE NAME DRAWN 07- Feb - 08 T.Nishimura CHECKED 07- Feb - 08 S.Miyashita CHECKED 07- Feb - 08 J.Komatsu T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced,

2MBI450U4E-120

Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
Contextual Info: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！