2MBITS DRAM Search Results

s5l840fx

Abstract: S5L840F calmRISC16 P9336 and pin diagram of MMC 4017 CalmRISC-16 player audio to flash memoy s5l8 samsung i2s S5H5002
Contextual Info: CPAD-WALTZ S5L840F Internet Audio Decoder for Flash Memory Media Data Sheet INTRODUCTION S5L840F is a single chip digital audio player IC supporting various compressed audio format on Flash Memory Media. S5L840F provides 2Mbits of embedded NOR flash memory and 76Kbytes of SRAM requiring no external

Contextual Info: HY5V52CFP 4 Banks x 2M x 32Bit Synchronous DRAM Document Title 4Bank x 2M x32Bit Synchronous DRAM Revision History Revision No. History Draft Date Remark Preliminary 0.1 Initial Draft May. 2003 0.2 1 Deleted Preliminary 2) Defined Input/Output Cap. Spec.

Contextual Info: HY5V52CFP 4 Banks x 2M x 32Bit Synchronous DRAM Document Title 4Bank x 2M x32Bit Synchronous DRAM Revision History Revision No. History Draft Date Remark Preliminary 0.1 Initial Draft May. 2003 0.2 1 Deleted Preliminary 2) Defined Input/Output Cap. Spec.

Contextual Info: Preliminary HY5V52CFP 4 Banks x 2M x 32Bit Synchronous DRAM Document Title 4Bank x 2M x32Bit Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft May. 2003 Preliminary This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume

HY5V52CF

Contextual Info: HY5V52CF 4 Banks x 2M x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hynix HY5V52CF is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V52CF is organized as 4banks of 2,097,152x32.

HY5V52CFP

Abstract: HY5V52CFPH
Contextual Info: Preliminary HY5V52CFP 4 Banks x 2M x 32Bit Synchronous DRAM Revision History 0.1 : New generation This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5V52CF 4 Banks x 2M x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hynix HY5V52CF is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V52CF is organized as 4banks of 2,097,152x32.

Contextual Info: HY5V52CF 4 Banks x 2M x 32Bit Synchronous DRAM Document Title 4Banks x 2M x 32Bit Synchronous DRAM Revision History Revision No. History Draft Date Remark Preliminary 0.1 Initial Draft Sep.06.2002 0.2 2nd Generation Nov.11.2002 0.3 133MHz Speed Added Dec.13.2002

Contextual Info: Preliminary HY5V52CF 4 Banks x 2M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY5V52CF is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V52CF is organized as 4banks of 2,097,152x32.

rt500

Abstract: HY5V52CF
Contextual Info: Preliminary HY5V52CF 4 Banks x 2M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY5V52CF is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V52CF is organized as 4banks of 2,097,152x32.

msm6598

Abstract: Digital ECHO microphone mixing circuit MSM6295 MSM62* ADPCM AR76 2mbits dram
Contextual Info: O K I Semiconductor INTRODUCTION ♦ PRODUCT LINE-UP OKI's voice synthesizers use; the Oki ADPCM and Oki SBC methods featuring high quality sound real voice. Mainly lined u p are voice synthesis ICs, recording and playback ICs, dedicated memories, and interface ICs. In addition, a developing environment including development tools, dedicated

M9842

Abstract: MSM62* ADPCM MSM63* ADPCM 5.3KHz IC
Contextual Info: E2D5004-27-50 INTRODUCTION O K I Semiconductor ♦ p ro d u c t y mwp OKI's voice synthesizers use the Oki ADPCM and Oki SBC methods featuring high quality sound real voice. Mainly lined up are voice synthesis ICs, recording and playback ICs, dedicated memories, and

Contextual Info: UG4M23201PTCT G Data sheets can be downloaded at www.unigen.com 8M Bytes (2M x 32 bits) FPM MODE DRAM MODULE FPM Mode Unbuffered 72 Pin SIMM based on 4 pcs 1M x 16 DRAM with LVTTL, 1K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM Pr

a1241

Abstract: NC143
Contextual Info: UG42W641 4 6GSG Data sheets can be downloaded at www.unigen.com 16M Bytes (2M x 64 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SODIMM based on 8 pcs 1M x 16 DRAM with LVTTL, 1K & 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM

Contextual Info: UG42S6428GSG-PL Data sheets can be downloaded at www.unigen.com 16M Bytes 2M x 64 bits SYNCHRONOUS DRAM MODULE PC100 SDRAM Unbuffered SODIMM based on 8 pcs 2M x 8 SDRAM with LVTTL, 2 banks & 2K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM

UG42S6442HSG

Contextual Info: UG42S6442HSG Data sheets can be downloaded at www.unigen.com 16M Bytes 2M x 64 bits SYNCHRONOUS DRAM MODULE PC100 SDRAM Unbuffered SODIMM based on 2 pcs 2M x 32 SDRAM with LVTTL, 4 banks & 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM

Contextual Info: UG42T6442HSG-PL Data sheets can be downloaded at www.unigen.com 16M Bytes 2M x 64 bits SYNCHRONOUS DRAM MODULE PC133 SDRAM Unbuffered SODIMM based on 2 pcs 2M x 32 SDRAM with LVTTL, 4 banks & 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM

MARKING U1

Contextual Info: UG42S6442HSG Data sheets can be downloaded at www.unigen.com 16M Bytes 2M x 64 bits SYNCHRONOUS DRAM MODULE PC100 SDRAM Unbuffered SODIMM based on 2 pcs 2M x 32 SDRAM with LVTTL, 4 banks & 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM

Contextual Info: AL4V2M8221 AL4V2M8222 Data Sheet Revision V1.0 Preliminary Version Information furnished by AverLogic is believed to be accurate and reliable. However, no responsibility is assumed by AverLogic for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or

rgb to vga circuit

Abstract: LQFP208-P-2828 MN5815UB
Contextual Info: New Graphics Processing LSI for Wide VGA MN5815UB „ Overview Unit: mm 30.00±0.20 28.00±0.10 105 156 104 1.25 157 28.00±0.10 30.00±0.20 MN5815UB is a LSI which performs “scanning line conversion” for NTSC signals or PAL signals and realizes a high definition

convert ega to vga

Abstract: rgb to vga circuit MN5815UB ega to vga VGA RGB LCD control host to vga convert LCD RGB 18 bit LQFP208-P-2828
Contextual Info: New Graphics Processing LSI for Wide VGA MN5815UB „ Overview Unit: mm 30.00±0.20 28.00±0.10 105 156 104 1.25 157 28.00±0.10 30.00±0.20 MN5815UB is a LSI which performs “scanning line conversion” for NTSC signals or PAL signals and realizes a high definition display on Wide VGA LCD panels, such as car

875mil

Abstract: HY57V651610TC10
Contextual Info: “HYUNDAI > -— .• H Y57V651610 2 Banks x 2M x 16 B it Synchronous ORAM DESCRIPTION The Hyundai HY57V651610 is a 6 7 ,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory appli­ cations which require large memory density and high bandwidth. HY57V651610 is organized as 2banks ot

hy57v164010c

Contextual Info: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of

8MX16

Abstract: HY5V26E
Contextual Info: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release Feb. 2005 1.1 Changed tOH Only Symbol ‘H’ : 2.5ns -> 2.7ns Apr. 2005 Remark