2MX32 Search Results

AS8S512K3

Contextual Info: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface

p 602

Abstract: W82M32V-XBX
Contextual Info: White Electronic Designs W82M32V-XBX 2Mx32 SRAM 3.3V MULTI-CHIP PACKAGE FEATURES Low Power CMOS Access Times of 12, 15, 17, 20ns TTL Compatible Inputs and Outputs Packaging • 255 PBGA, 25mm x 25mm, 625mm Fully Static Operation: 2 Organized as 2Mx32 • No clock or refresh required.

O28 Package

Abstract: WF2M32-XXX5 WF2M32U-XG2UX 68 lead CQFJ
Contextual Info: White Electronic Designs WF2M32-XXX5 2Mx32 5V Flash Module FEATURES Access Time of 90, 120, 150ns Organized as 2Mx32 Packaging: Commercial, Industrial, and Military Temperature Ranges • 66 pin, PGA Type, 1.185" square, Hermetic Ceramic HIP Package 401 .

SIMM 80 jedec

Abstract: 80 pin simm flash Flash SIMM 80 E28F016S5 EDI7F342MC
Contextual Info: EDI7F342MC White Electronic Designs 2Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F342MC and EDI7F2342MC are organized as one and two banks of 2Mx32 respectively. The modules are based on Intel's E28F016S5 2Mx8 Flash device in TSOP packages which are mounted on an

Contextual Info: KM23V64205ASG CMOS MASK ROM 64M-Bit 4Mx16 /2Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 16(word mode) 2,097,152 x 32(double word mode) • Fast access time Random Access/Page Access 3.3V Operation : 100/30ns(Max.)

Contextual Info: K4S643233F-S D E/N/I/P CMOS SDRAM 2Mx32 SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.3 July 2002 Rev. 1.3 July. 2002 K4S643233F-S(D)E/N/I/P CMOS SDRAM Revision History Revision 0.0 (Jan. 2002, Preliminary) • First generation of 2Mx32 SDRAM F-die 90FBGA datasheet (V DD/VDDQ 3.0V/3.0V, 3.3V/3.3V).

28F016S3

Abstract: EDI7F342MV 80pin-SIMM
Contextual Info: EDI7F342MV White Electronic 2Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F342MV and EDI 7F2342MV are organized as one and two banks of 2Mx32 respectively. The modules are based on Intel's 28F016S3 2Mx8 Flash device in TSOP packages which are mounted on an

EDI7F4342MC

Abstract: LH28F016SU
Contextual Info: White Electronic Designs EDI7F4342MC 2Mx32 FLASH MODULE DESCRIPTION FEATURES „ 2Mx32 „ Based on Sharp's LH28F016SU Flash Device „ Fast Read Access Time - 80ns „ 5V Only Reprogramming „ The EDI7F4342MC is organized as four banks of 2Mx32. The module is based on Sharp's LH28F016SU - 2Mx8

Contextual Info: KMM332V213AJ/AT DRAM MODULE KMM332V213AJ/AT Fast Page Mode 2Mx32 DRAM DIMM based on 2Mx8 Low Power, 2K Refresh , 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332V213A is a 2M bit x • Performance Range: 32 Dynamic RAM high density memory module. The Samsung KMM332V213A consists of four

Contextual Info: KMM332F204AT-L KMM332F224AT -L DRAM MODULE KMM332F204AT-L / KMM332F224AT-L Fast Page with EDOMode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V G EN ERA L FEATURES DESCRIPTIO N The Samsung KMM332F20 2 4AT is a 2M bit x 32 Dynamic RAM high density memory module. The

Contextual Info: HANBit HMF2M32F4VSB Flash-ROM Module 8MByte 2Mx32Bit , 80Pin-SMM, 3.3V Design Part No. HMF2M32F4VSB GENERAL DESCRIPTION The HMF2M32F4VSB is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 80-pin stackable type, double - sided, FR4printed circuit board.

Contextual Info: HANBit HMF2M32F4VA Flash-ROM Module 8MByte 2Mx32Bit , 80Pin-SMM, 3.3V Design Part No. HMF2M32F4VA GENERAL DESCRIPTION The HMF2M32F4VA is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 80-pin stackable type, double - sided, FR4printed circuit board.

M5M4V17800CTP

Abstract: 2MX32
Contextual Info: MITSUBISHI LS Is {DRAM MODULE FAST PAGE MODE DYNAMIC RAM 64i 2MX32 0 * t M BIT Max. Access Type name Load memory time Outward dimensions W X H X D mm) Data sheet page (ns) MH2V32CJJ-5 ★ 50 MH2V32CJJ-6 ★ 60 MH2V32CJJ-7 ★ 70 MH2V32CJJ-5S -k 50 MH2V32CJJ-6S

Contextual Info: □ WF2M32-XXX5 WHITE /MICROELECTRONICS 2Mx325V FLASH MODULE AD VAN CED * FEATURES • A ccess Tim e of 9 0 ,1 2 0 ,150nS Com m ercial, Industrial, and M ilitaryT em p eratu re Ranges ■ Packaging: 5 Vo lt Read and W rite . 5V ± 1 0 % Supply. • 66-pin, PG A T yp e, 1.185 inch square, Herm etic Ceram ic HIP

DPS2MK32MKV3

Contextual Info: 8Mx8/4Mx16/2Mx32, 20 - 45ns, PGA 30A128-18 A 64 Megabit High Speed CMOS SRAM DPS2MK32MKV3 PRELIMINARY DESCRIPTION: The DPS2MK32MKV3 ‘’VERSA-STACK’’ module is a revolutionary new high speed memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip

Contextual Info: •lì WF2M32-XXX5 Hi-KELiABIUTY PRODUCT 2Mx32 5V FLASH MODULE, SMD 5962-97531 pending PRELIMINARY* FEATURES ■ A c c e s s Tim e of 9 0 ,1 2 0 ,1 50ns C o m m ercial, In d u strial, and M ilita ry Tem p erature Ranges ■ Packaging: 5 V o lt Read and W rite . 5V ± 1 0 % Supply.

MH2M325CNXJ6

Abstract: 2MX32
Contextual Info: MITSUBISHI LS Is DRAM MODULE HYPER PAGE MODE DYNAMIC RAM 64i 2MX32 U H -M B IT Max. Access Type name Load memory time Outward dimensions Data sheet W X H X D (mm) page 107.95 X 20.2 x 8.60 3 /8 (ns) MH2M325CXJ-5 ★ 50 MH2M325CXJ-6 ★ 60 MH2M325CXJ-7 ★

28F016S3

Abstract: EDI7F342MV
Contextual Info: EDI7F342MV 2Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F342MV and EDI 7F2342MV are organized as one and two banks of 2Mx32 respectively. The modules are based on Intel's 28F016S3- 2Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate.

HY5DU643222AQ

Abstract: HY5DU643222AQ-4 HY5DU643222AQ-43 HY5DU643222AQ-5 HY5DU643222AQ-7
Contextual Info: HY5DU643222AQ 64M 2Mx32 DDR SDRAM HY5DU643222AQ This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6/ Jan. 02

CX-53

Abstract: KM48C2100A cx53 KMM53221 KM48C2100AJ
Contextual Info: DRAM MODULE 8 Mega Byte KMM53221OOAU /AUG Fast Page Mode 2Mx32 DRAM SIMM , 2K Refresh, 5 Using 2Mx8 B/W DRAM J GENERAL DESCRIPTION FEATURES The Samsung KMM5322100AU is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322100AU consists of four CMOS

Samsung 2MX32 EDO

Abstract: Samsung 2MX32 EDO simm module
Contextual Info: DRAM MODULE KMM5322104BKU/BKUG KMM5322104BKU/BKUG Fast Page Mode with Extended Data Out 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM G EN ERA L DESC RIPTIO N FEATURES • Part Identification The Samsung KMM5322104BKU is a 2M bit x 32 Dynamic RAM high density memory module. The

24w04

Abstract: KMM5322100BK
Contextual Info: DRAM MODULE KMM53221OOBKU/BKUG KMM53221 OOBKU/BKUG Fast Page Mode 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM G EN ERA L DESCRIPTIO N FEATURES • Part Identification The Samsung KMM5322100BKU is a 2M bit x 32 Dynamic RAM high density memory module. The

KM48V2104BS-L

Abstract: km48v2104bs
Contextual Info: KMM332F203BS-L KMM332F213BS-L DRAM MODULE KMM332F203BS-L & KMM332F213BS-L Fast Page with EDO Mode 2Mx32 DRAM DIMM, 2Mx8, Low Power with Self Ref, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332F20 1 3BS is a 2M bit x 32 D ynam ic RAM high density m em ory module. The

Contextual Info: Preliminary KMM332V204BT-L KMM332V224BT-L DRAM MODULE KMM332V204BT-L & KMM332V224BT-L Fast Page Mode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332V20 2 4BT is a 2M bit x 32 Dynam ic RAM high density m em ory module. The