2N 6287 Search Results

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR PACKAG E PN P TO -3 T O -204A A T O -254A A sus VOLTS Ic (m ax) AM PS 2N 6050 60 12 2N 6051 80 2N 6052 D E V IC E TYPE ^C E O @ Ic/ VcE m in/m ax @ a /v l*FE VcE(sat) @ I c/I b V @ A /A C<f P (M H z)

ic cd 6283

Abstract: d 6283 ic cd 6283 ic data base lc CD 6283 cd+6283+ic+wiring+diagram 6283
Contextual Info: • 7 CJ2CI 2 3 7 OQeW S SCS-THOMSON 3 T '5 V 5 \ 2N6282/83/84 2N6285/86/87 S G S - THOMSON 3QE » COMPLEMENTARY POWER DARLINGTONS DESCRIPTIO N The 2N 6282,2N 6283 and 2N6284 and the comple­ mentary PNP types 2N6285, 2N6286, 2N 6287 are epitaxial-base silicon transistors in monolithic Dar­

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

AUDIO CIRCUIT 6283

Abstract: ic 6283 circuit diagram l 6283 2N6282 RCA 2N6282 d 6283 ic d 6282 ic IC 6283 2N6287 RCA
Contextual Info: 3875081 G E SOLID STATE- 01 inf| 3a7SQfll QOlVaBT b |~ 7- J J - $ 1 _ Darffngton Power Transistors File Number 1001 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 20-Ampere Complementary N-P-N and P-N-P Monolithic Darlington Power Transistors TERMINAL DESIGNATIONS

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

ic 6283 circuit diagram

Abstract: d 6283 ic l 6283 d 6282 ic 2N6282 IC 6283 2N 6287 N6283
Contextual Info: File Num ber 1001 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 20-Ampere Complementary N-P-N and P-N-P Monolithic Darlington Power Transistors TERMINAL DESIGNATIONS 60-80-100 Volts, 160 Watts Gain of 2400 Typ. at 10 A (2N6282, 2N6283, 2N6284) Gain of 3500 (Typ.) at 10 A (2N6285, 2N6286, 2N6287)

2N6282 RCA

Abstract: 2N6284 RCA 2N6282 2N6285 RCA 2N6287 RCA 2n6285 2N6287 cs 6-07 amplifier transistor 2N6284 2N6283
Contextual Info: 3875081 G E SOLID STATE- 01 ¿ F § 3fl7S0fll □D172Bci b | File Number 1001 DarlingtonPowerTransi 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 20-Ampere Complementary N-P-N and P-N-P Monolithic

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

bdx340

Abstract: bdw 34 a mj 1001 6282 TIP-142 2N6284 BDV65 BDW93
Contextual Info: r 7z#j ^ SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL RÆoæ moi(gra(M[](gs POWER BIPOLAR EPITAXIAL BASE HIGH GAIN DARLINGTONS (Continued •c v CBO v CEO ptot Package Ty pe N PN h FE <C 1 VCE v C Esat lc ' 'B PNP m in (A) (V) (V) (W) 8 8 8 8 8 8 8 8 8 8 8

Contextual Info: 2N6282,2N6283,2N6284,2N6285,2N6286,2N6287 File Number 1001 HARRIS SEMICOND SECTOR 5 h E J> 4302271 20-Ampere Complementary N-P-N and P-N-P Monolithic Darlington Power Transistors 0040533 TS1 IHAS T -3 3 ~0 / TERMINAL DESIGNATIONS 60-80-100 Volts, 160 Watts

bdx340

Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60

2N6287 JANTX

Abstract: 2N6282 amplifier transistor 2N6284 2N6283 2N6284 2N6285 2N6286 2N6287 2N6282 NEW ENGLAND SEMICONDUCTOR 2N62B
Contextual Info: NPN PNP 2N6282 2N6285* 2N6283* 2N6286* 2N6284* 2N6287* *also a v a ila b le as JA N , JA N T X , JA N T X V DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose am plifier and low frequency switching applications. Collector-Em itter Sustaining Voltage —

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

1N5160

Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete

2N6284

Abstract: 2N6283 2N62B
Contextual Info: SEMTECH CORP SñE J> m 013^13^ 160 WATT 20 AMP CONTINUOUS, 40 AMP PEAK 0003310 353 SE T 2N6283, 2N6284, 2N6286 2N6287 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2 N 6 2 84 , 2 N 6 2 8 7 100 Vdc VcBO 2 N 6 2 8 3 , 2 N 6 2 86

in5388

Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Contextual Info: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor

NPN Transistor 2N3055 darlington

Abstract: lambda LAS PMD 1000 stc transistors series 2N3055 4D ic 810 2N3055 series voltage regulator 2N3055 PMD12K40 2N3055-2
Contextual Info: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE T E M P E R A T U R E T c 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range

Contextual Info: SGS-THOMSON [¡»æSLitgraiMOOi 2N6283/2N6284 2N6286/2N6287 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . 2N6284AND2N6287 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N6283 and 2N6284 are silicon epitaxial-base NPN power transistor in monolithic

Germanium drift transistor

Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
Contextual Info: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

MC7812Ck

Abstract: MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC
Contextual Info: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE TEM PERATURE Tc 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode