2N 7000 C Search Results

2N 7000 C Result Highlights (5)

Part	Manufacturer	Description
70007-001LF	Amphenol Communications Solutions	Din Accessory Shroud 3x32 Back Side, Metal Inserts
70007-005LF	Amphenol Communications Solutions	Din Accessory Shroud 3x32 Back Side, Metal Inserts
70005-001LF	Amphenol Communications Solutions	Din Accessory Shroud
51723-10700000CBLF	Amphenol Communications Solutions	PwrBlade®, Power Supply Connectors, 7P Right Angle Header.
47437-000LF	Amphenol Communications Solutions	PV® Wire-to-Board Connector System, 2.54mm (0.1inch) Centerline Crimp-to-Wire Receptacle.

2N 7000 C Price and Stock

Filter by Manufacturer

Select Manufacturer


Harwin M83-LFC1F2N27-0000-000 Headers & Wire Housings 3R 27P F S/BORE CRIMP 24-28AWG W/JS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	M83-LFC1F2N27-0000-000		317			1 $29.51 10 $25.56 100 $22.31 1000 $20.98 10000 $20.98	Buy Now
TE Connectivity CEGA322NN00000057000 Circular Metric Connectors 940 RECEPTACLE, SPEEDTEC-READY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CEGA322NN00000057000		15			1 $68.13 10 $60.48 100 $60.48 1000 $60.48 10000 $60.48	Buy Now
TE Connectivity YCTJ620E12NC177000 In-Line Junction Modules PLUG ASSY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	YCTJ620E12NC177000					1 - 10 - 100 - 1000 - 10000 -	Get Quote
ODU Steckverbindungssysteme Gmbh & Co Kg K31B0C-P02NPL0-7000 Circular Push Pull Connectors
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	K31B0C-P02NPL0-7000					1 - 10 - 100 - 1000 - 10000 -	Get Quote

2N 7000 C Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2N7000CSM		Semelab	N-Channel Enhancement Mode MOS Transistor		Original	PDF

2N 7000 C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2n7000 equivalent Abstract: 2n7000 2n7000 data sheet 7000 Series 2n7000 equivalents Text: SEMICONDUCTOR 2N7000 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 7000 K 3 No. Item 816 4 Marking Description 2N Series Name 7000 Device Name KEC K KEC CORP. Lot No. 816 Device Name 2004. 2. 11 2 Revision No : 0 8 Year	Original	2N7000 2n7000 equivalent 2n7000 2n7000 data sheet 7000 Series 2n7000 equivalents	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor 2N 7000 N-Channel — Enhancement Motorola Preferred Device 3 DRAIN MAXIMUM RATINGS Rating Drain Source Voltage Symbol Value Unit V d SS 60 Vdc Drain-Gate Voltage R g s = 1-0 M il	OCR Scan	2N7000/D com-TOUCHTONE602-244-6609	PDF
2n7000+complement Abstract: 2N7000 2n7000 darlington Text: i •SmiA 37E D SEMELAB LTD o7mco/ • 0133107 ÜGG0321 □ ■ SULB S E M E L A B r 2N 7000 MOS POWER FET N-Channel Enhancement Mode APPLICATIONS • CMOS or TTL LOGIC COMPATIBLE • BIPOLAR DARLINGTON REPLACEMENT • LAMP, RELAY DRIVER OR BUFFER • ANALOG SIGNAL SWITCHING	OCR Scan	GG0321 in-100 200mA 123mA 2N7000 N7000 2n7000+complement 2N7000 2n7000 darlington	PDF
7002N Abstract: 2N7000 S7002 Text: November 1995 PAIRCHII-D M ICDNDUCTQ R ! 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high	OCR Scan	2N7000 2N7002 NDS7002A 400mA 2N7002A 7002N S7002	PDF
2N2910 Abstract: 2N29205 2N3521 2N2223 2N291B 2N2642 ic 3524 DARLINGTON 2N2060 2N2480 Text: SPECIAL SILICON PRODUCTS D IFFER EN TIA L AM PLIFIERS D if f e r e n ti a l A m p l i f i e r s — N P N 285 1 lc 1 Ic 3 Ic = 10/uA = 10m A = 1 0 0/ iA 4 JA N & J A N T X t y p e s a v a ila b le 5 T 0 - 1 8 p a c k a g e s a v a ila b le ‘ Ic = 5m A CHOPPERS	OCR Scan	10/iA 2N2060 2N2223 2N2223A 2N24535 2N2453As 2N2480 2N2480A 2N2639 2N2356 2N2910 2N29205 2N3521 2N291B 2N2642 ic 3524 DARLINGTON	PDF
555T Abstract: me 555 IC 555 ML555T ML555V 12v to 5v 555 ML555 555 amplifier 2N5305 TTL 555 Text: fllultipl* Transistor/ Darlington amplifier/ r Electrical C ha racteristics @ M a x im u m R atin gs T Y P E NO. PD C BVc b O LV CEO h jrg e v EBO @ T a = 25°C ME 2N 2N 2N 2N 5308 5305 5306 5307 5308 BC 516 BC 517 m in. 250m W 500m W 5Q 0m W 500m W 500m W	OCR Scan	250mW 300mA 60MHz O-106 500mW O-92B 555T me 555 IC 555 ML555T ML555V 12v to 5v 555 ML555 555 amplifier 2N5305 TTL 555	PDF
BSW17 Abstract: transistor bsw 67 2N998 BFX66 BFX67 Text: BGY 16 15 Z T5 Z T3 Z U Z "O Z P O LA RIT Y o PD max W o o 00 00 00 —» ^ -&I ro o o o pop o » * —* i \/ /\/\ L v C E O mm lc R A N G E (mA) o o o hFE min 30 l c (mA) 50 o o o 50 GO CO OO oop O) Nj fo cn cn '* V C E s a t max (V) 10 10 10 lc (mA) '	OCR Scan	BFX66 BFX67 2N998 BSW17 BSW17 transistor bsw 67	PDF
TP107B Abstract: 2N5133 TP107A 2N3565 TP109B tp107 TP252A TP251B MPS-A13 pnp 2N5138 Text: Q Q D f l O I I C EconolineR Plastic-Molded 0I KHV UC Silicon SEPT" Transistors SMALL-SIGNAL LOW NOISE AMPLIFIERS P O LA R IT Y Pd 25 C mW 2N3565 2N5133 2N5138 2N 5376 2N5377 2N5378 2N 5379 NPN NPN PNP NPN NPN PNP PNP 625 625 625 500 500 500 500 30 20 30	OCR Scan	2N3565 2N5133 2N5138 2N5377 2N5378 MPS5308A 2N5306 2N5306A 2N5307 2N5308 TP107B TP107A TP109B tp107 TP252A TP251B MPS-A13 pnp	PDF
2N7000 Abstract: 2N700 7002A 2n7002 FE -2N7002 "ON Semiconductor" 2N7002 Text: November 1995 PAIRCHII-D M ICDNDUCTQ R ! 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high	OCR Scan	2N7000 2N7002 NDS7002A 400mA 2N7002A 2N700 7002A FE -2N7002 "ON Semiconductor" 2N7002	PDF
N7000 Abstract: 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm Text: March 1993 Semiconductor 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been	OCR Scan	2N7000/2N7002/NDF7000A/NDS7002A 81-043-299-240B bSD1130 N7000 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm	PDF
2N5307 Abstract: No abstract text available Text: 2N 5307 & 2N 5308 NPN DARLINGTON GENERAL DESCRIPTION : A M P IFIER MECHANICAL OUTLINE TO-92B The 2N 5307 & 2N 5308 are NPN silicon planar epitaxial Darlington amplifiers. The devices are suitable for preamplifier input stages requir ing high input impedance or very high	OCR Scan	O-92B 400sM 10ftnA 20MHz 2N5307	PDF
GES5307 Abstract: 2N3901 2n3901 equivalent 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N5232A Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE b v CEO Type 2N 3391A NPN 25 2 N 3844 NPN 30 2N 3844A NPN 30 35-70 2N 3845 NPN 30 60 -1 2 0 2N 3845A NPN 30 60-120 2N 3900A NPN 18 2 5 0-&00 2N3901 NPN 18 2N 5232A NPN 2N 5249A 2N 5306A V NF hFE Device Min.-Max. @ l c > ^ C E <V)	OCR Scan	2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 GES5305, GES5307 2n3901 equivalent 2N5232A	PDF
D39C4 Abstract: ei50 2n5306 GES6220 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,	OCR Scan	2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 100Hz) D39C4 ei50 2n5306 GES6220	PDF
2N3684 Abstract: 2N3685 2N3686 2N3687 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A Text: THOMSON/ DISTRIBUTOR SÖE D T05t,fl73 □00S740 4SD TCSK Discrete Transistors Amplifier Transistors Junction FETs - N-Channel Vp V •d s s mA M ax >GSS pA M ax b v G SS V Min C\|ss pF M ax C rss pF M ax -2 .0 -1 .0 -0 .6 -0 .3 -5 .0 -3 .5 -2 .0 -1 .2 -1 0 0	OCR Scan	T0Stifl73 00S740 2N3684 2N3685 2N3686 2N3687 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A	PDF

C45N equivalent Abstract: general electric c350 C350 cdi dc with scr for 15 ampere, 12 volt C150P C147D TRANSISTOR D1651 General electric SCR C147M C147 C45U Text: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S \|V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1} 500 -13 00	OCR Scan	2N1909-16 2N1792-98 C45N equivalent general electric c350 C350 cdi dc with scr for 15 ampere, 12 volt C150P C147D TRANSISTOR D1651 General electric SCR C147M C147 C45U	PDF
2N3340 Abstract: No abstract text available Text: small signal transistors 72 SILICON NPN PLANAR RATED BREAKDOWN VOLTAGES TYPE NUMBERS VC8 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N 30 60 60 60 60 60 80 80 80 100 100 100 100 125 125 125 3340 2523 2524 2520 2521 2522 2514 2515 2516 2459 2460 2461 2462	Original		PDF
General electric SCR C147M Abstract: C147N C147pb SCR C147PB GE C147P GE C150 C147 C52U C147D GE C147S Text: 109 PHASE CO N T R O L SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2 N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S \|V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1}	OCR Scan	2N1909-16 2N1792-98 General electric SCR C147M C147N C147pb SCR C147PB GE C147P GE C150 C147 C52U C147D GE C147S	PDF
General Electric SCR C52T Abstract: C52 SCR General electric SCR c50 General electric SCR C52 c52m 50 20 500 C52T scr c52u scr C50 C52 "SCR" C52E Text: 109 PHASE CO N T R O L SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2 N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S \| V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1}	OCR Scan	2N1909-16 2N1792-98 General Electric SCR C52T C52 SCR General electric SCR c50 General electric SCR C52 c52m 50 20 500 C52T scr c52u scr C50 C52 "SCR" C52E	PDF
quan-tech Abstract: D39C4 2N3901 GES6220 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,	OCR Scan	2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 2N5307, quan-tech D39C4 GES6220	PDF
HKQ0603 Abstract: HK0603 Text: 高周波積層チップインダクタ MULTILAYER CHIP INDUCTOR FOR HIGH FREQUENCY HK SERIES 0603D｜55V125C ＊HK0603, HK1005を除く＊Except for HK0603, HK1005 1005D｜55V125C＊＊ OPERATING TEMP. ｜55V85C＊＊ 1608D｜40V85C ＊＊保証定格により変わります。	Original	0603D55V125C 1005D55V125C 55V85C 1608D40V85C 2125D40V85C HK0603, HK1005 HK1005 100MHz. HKQ0603 HK0603	PDF
c45 scr Abstract: scr C50 C46U C46C C46M TRANSISTOR D1651 2N1909 C147 C147U C350 Text: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 2N 1909-16 2 N 1792-98 JEOEC C 60, 62 C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S \|V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1} 500 -13 00	OCR Scan	2N1909-16 2N1792-98 CA-20 Vis-20 c45 scr scr C50 C46U C46C C46M TRANSISTOR D1651 2N1909 C147 C147U C350	PDF
2n60s Abstract: 2N6050 2N6057 2N6058 Text: HA RR IS S E H I C O N D S E C T O R 5bE J> • 43Ü 2 27 1 Q Q M D M^ S 31fl Hi HA S 2N6050,2N6051,2N6052,2N6057,2N6058,2N6059 File Number lis a 7 = 3 3 - 0 / 12-Ampere Complementary P-N-P and N-P-N Monolithic Darlington Power Transistors TERMINAL DESIGNATIONS	OCR Scan	2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 12-Ampere 2N6052) 2n60s	PDF
SOT 23 1ft Abstract: 2N5484 2NS484 MMBF5484 1Ft SOT23 transconductance 2N5485 2N5485 2N5486 MMBF5485 MMBF5486 Text: Semiconductor 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 •# SOT-23 S N-Channel RF Amplifier This device is designed primarily for electronic switching applications such a s low On Resistance analog switching. Sourced from P rocess 50. Absolute Maximum Ratings*	OCR Scan	N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 OT-23 SOT 23 1ft 2N5484 2NS484 1Ft SOT23 transconductance 2N5485 2N5486 MMBF5486	PDF
ATML U 106 Abstract: ATML 350 UC758 2N5902 TO-92 2N5045 J2N5670 2N3966 ATML U ATML U 010 2N3070 Text: flnlitran_ [F>[a iB y)©'ir ©Mm.©© Devices. Inc. L O W P O W E R FIE L D E F F E C T T R A N S I S T O R S (ÜHNIIIIMIL Type Num ber •BVDgo or BVgss C ase Min Style ( T O - ) G eom etry (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min	OCR Scan	2N3066 2N3067 2N3068 2N3069 2N3070 2N3071 2N3085 2N3087 2N3089 2N3089A ATML U 106 ATML 350 UC758 2N5902 TO-92 2N5045 J2N5670 2N3966 ATML U ATML U 010	PDF

2N 7000 C Search Results

2N 7000 C Result Highlights (5)

2N 7000 C Price and Stock

Harwin M83-LFC1F2N27-0000-000

TE Connectivity CEGA322NN00000057000

TE Connectivity YCTJ620E12NC177000

ODU Steckverbindungssysteme Gmbh & Co Kg K31B0C-P02NPL0-7000

2N 7000 C Datasheets (1)

2N 7000 C Datasheets Context Search

2n7000 equivalent

Untitled

2n7000+complement

7002N

2N2910

555T

BSW17

TP107B

2N7000

N7000

2N5307

GES5307

D39C4

2N3684

C45N equivalent

2N3340

General electric SCR C147M

General Electric SCR C52T

quan-tech

HKQ0603

c45 scr

2n60s

SOT 23 1ft

ATML U 106