2N5306 Search Results

2N5306 Datasheets (41)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N5306	Fairchild Semiconductor	NPN Darlington Transistor	Original	PDF	55.82KB	4
2N5306	Fairchild Semiconductor	NPN Darlington Transistor	Original	PDF	23.59KB	2
2N5306	Allegro MicroSystems	General Purpose Bipolar Transistor, NPN, 25 MinV, TO-92, 3-Pin	Scan	PDF	379.81KB	5
2N5306	Central Semiconductor	Darlington Bipolar Transistor, NPN, 25V, TO-92, 3-Pin	Scan	PDF	98.01KB	2
2N5306	Central Semiconductor	SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY)	Scan	PDF	383.03KB	4
2N5306	Fairchild Semiconductor	NPN Darlington Transistor	Scan	PDF	44.19KB	2
2N5306	General Electric	Semiconductor Data Handbook 1977	Scan	PDF	797.84KB	6
2N5306	General Electric	Semiconductor Data Book 1971	Scan	PDF	1.15MB	3
2N5306	General Electric	Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA.	Scan	PDF	129.81KB	4
2N5306	Micro Electronics	Semiconductor Device Data Book	Scan	PDF	53.98KB	1
2N5306	Micro Electronics	Semiconductor Devices	Scan	PDF	50.38KB	1
2N5306	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.79KB	1
2N5306	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	115.58KB	1
2N5306	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	91.75KB	1

2N5306	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	99.79KB	1
2N5306	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	56.44KB	1
2N5306	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	86.67KB	1
2N5306	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	49.56KB	1
2N5306	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	161.64KB	1
2N5306	National Semiconductor	NPN Transistors / DARLINGTON	Scan	PDF	146.06KB	4

2N5306 Price and Stock

Filter by Manufacturer

Select Manufacturer


Central Semiconductor Corp 2N5306-TIN-LEAD TRANS NPN DARL 25V 0.3A TO-92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5306-TIN-LEAD	Bulk	2,222		1	1 $1.15 10 $0.72 100 $0.47 1000 $0.33 10000 $0.25	Buy Now
onsemi 2N5306 TRANS NPN DARL 25V 1.2A TO-92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5306	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	2N5306	Bulk		111 Weeks	6,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Central Semiconductor Corp 2N5306-PBFREE TRANS NPN DARL 25V 0.3A TO-92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5306-PBFREE	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $0.27	Buy Now
Central Semiconductor Corp 2N5306-TRE-PBFREE 300MA 25V TH TRANSISTOR-SMALL SI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5306-TRE-PBFREE	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.26	Buy Now
Central Semiconductor Corp 2N5306-APM-PBFREE 300MA 25V TH TRANSISTOR-SMALL SI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5306-APM-PBFREE	Ammo Pack			4,000	1 - 10 - 100 - 1000 - 10000 $0.26	Buy Now

Find more 2N5306 price and stock on Findchips.com

2N5306 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N5306 Abstract: F63TNR MPSA14 PN2222N CBVK741B019 Contextual Info: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	2N5306 MPSA14 2N5306 F63TNR PN2222N CBVK741B019	PDF
D38S1-4 Abstract: 2N3901 D38S7 GES93 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,	OCR Scan	2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S1-4 D38S7 GES93	PDF
D40C2 Contextual Info: CENTRAL SEMICONDUCTOR fc,l D \| nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C	OCR Scan	2N5305 2N5306 2N5307 2N5308 GES5305 S5306 GES5306A GES5307 GES5308 GES5308A D40C2	PDF
2N5306 NATIONAL SEMICONDUCTOR Abstract: NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A Contextual Info: This NPN Transistors v EBO V Min Ic e s ' 'CBO a (jiA) Max Its Case Style 2N5305 TO-92 (94) 0.1 2N5306 TO-92 (94) 2N5307 *c @ VCE (mA) (V) VCE(SAT) VBE(SAT) . (V) & (V) 0 C Max Min Max ( ) fT (MHz) C0b (pF) Max Min @ lc (mA) Process No. 25 2000 20,000 2	OCR Scan	D0370b0 2N5306 NATIONAL SEMICONDUCTOR NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A	PDF
2N5306 Abstract: MPSA14 Contextual Info: S S E f v l l G O f s l O L J C î T Q R ;:m 2N5306 NPN Darlington Transistor This device is designed for applications requiring extrem ely high cu rre n t gain at currents to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS	OCR Scan	2N5306 MPSA14 2N5306	PDF
Contextual Info: Small Signal Darlington Transistors Part No. 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64 MPSA65 20070515 Polarity NPN PNP VCEO hFE @ VCE & IC IC V (A) 20 30 30 40 20 30 30 30 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Min. Max. 7K 2K 7K 20K 20K	Original	2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64	PDF
2N5306 equivalent Abstract: 2N5306 MPSA14 Contextual Info: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	2N5306 MPSA14 2N5306 equivalent 2N5306	PDF
Contextual Info: 2N5306 2N5306 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25°C unless otherwise noted	Original	2N5306 MPSA14	PDF
quan-tech Abstract: D39C4 2N3901 GES6220 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,	OCR Scan	2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 2N5307, quan-tech D39C4 GES6220	PDF
2N5306 Abstract: 2N5306 FAIRCHILD SEMICONDUCTOR Contextual Info: SEMICONDUCTOR ¡m 2N5306 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high cu rre n t gain at cu rre n ts to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted	OCR Scan	2N5306 PSA14 2N5306 2N5306 FAIRCHILD SEMICONDUCTOR	PDF
2n5306 Contextual Info: SEMICONDUCTOR • 2N5306 . TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum RatinQS TA = 25°C unless otherwise noted	OCR Scan	2N5306 MPSA14 2n5306	PDF
2n5306 Contextual Info: 2N5306 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME \| CATALOG \| CART \|EXPRESS CHECKOUT \| PARTS WATCH \| NEW ITEMS \|RFQ\| Home 2N5306 Availability Online Store	Original	2N5306 2N5306 STV3208 LM3909N	PDF
D38S5 Abstract: hitachi 16 X 2 lcd 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N3901 2N5232A Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 P A C K A G E Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA,	OCR Scan	2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S3' D38S5 hitachi 16 X 2 lcd 2N5232A	PDF
MPSA14 MPSA64 Abstract: GES5307 MPS-A13 pnp Central D40C1 2N5306 D40C2 2N53 2N5305 2N5306A 2N5307 Contextual Info: CENTRAL SEMICONDUCTOR fc,l D \| nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE - 6 5 ° t o + 1 5 0 ° C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C	OCR Scan	2N5305 2N5306 2N5306A 2N5307 2N5308A GES5305 S5306 GES5306A To-126 0000S23 MPSA14 MPSA64 GES5307 MPS-A13 pnp Central D40C1 2N5306 D40C2 2N53 2N5305 2N5306A 2N5307	PDF

D39C4 Abstract: ei50 2n5306 GES6220 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,	OCR Scan	2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 100Hz) D39C4 ei50 2n5306 GES6220	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B	PDF
2N5309 Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN	OCR Scan	2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 012ySC 2N5309 2N5305 2N5306	PDF
2N4256 Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 "to-98" package Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-M ax. @ IC, V C E (V> (V) Max. T ypical (MHz) Cc b @ 10V 1 MHz T ypical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256 2N 4424 2N4425 NPN	OCR Scan	2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5365 2N5305 2N5306 "to-98" package	PDF
NPN Transistor TO92 5V 200mA Abstract: 2N3877A GES5307 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5308 GES5308A Contextual Info: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K. 2K-20K 7K-70K	OCR Scan	GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. NPN Transistor TO92 5V 200mA 2N3877A GES5307 GES6220 D38L1-3 GES5308 GES5308A	PDF
D39C4 Abstract: 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5307 GES5308 Contextual Info: SILICON SIG N A L D AR L I N G T O N TR ANS IS TO RS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K.	OCR Scan	GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. D39C4 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5307 GES5308	PDF
mhb 7001 Abstract: PJ 1269 D39C4 GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device 'F E bvceo Type @10mA V Min. 1 I I • m Max. @ lc(mA) GES5822 NPhl 60 GES5823 a a 60 GES5824 40 GES5825 I 40 GES5826 40 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 mhb 7001 PJ 1269 D39C4 GES6220	PDF
2N3901 Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device b v ceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES60I GES6014, 2N3901 GES6001	PDF
2N5306 equivalent Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN	OCR Scan	2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 100Hz) 2N5306 equivalent ATI 200M D39C4 GES6220	PDF

2N5306 Search Results

2N5306 Datasheets (41)

2N5306 Price and Stock

Central Semiconductor Corp 2N5306-TIN-LEAD

onsemi 2N5306

Central Semiconductor Corp 2N5306-PBFREE

Central Semiconductor Corp 2N5306-TRE-PBFREE

Central Semiconductor Corp 2N5306-APM-PBFREE

2N5306 Datasheets Context Search

2N5306

D38S1-4

D40C2

2N5306 NATIONAL SEMICONDUCTOR

2N5306

2N5306 equivalent

quan-tech

2N5306

2n5306

2n5306

D38S5

MPSA14 MPSA64

D39C4

IC HXJ 2038

sn76131

2N5309

2N4256

NPN Transistor TO92 5V 200mA

D39C4

mhb 7001

2N3901

2N5306 equivalent