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Infineon Technologies AG IPB80N06S2L-06 POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 55V, 0.0084OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB (Also Known As: 2N06L06)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IPB80N06S2L-06		450			1 $2.5 10 $2.5 100 $2.5 1000 $1.25 10000 $1.25	Buy Now

2N06L06 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N06L06 Abstract: DIODE led SMD 5050 smd led 5050 datasheet SPB80N06S2L-06 SPP80N06S2L-06 ANPS071E smd diode marking 69a Text: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 6.3 mΩ ID 80 A P- TO263 -3-2 • 175°C operating temperature P- TO220 -3-1 • Avalanche rated • dv/dt rated	Original	PDF	SPP80N06S2L-06 SPB80N06S2L-06 Q67060-S6033 Q67060-S6034 2N06L06 BSPP80N06S2L-06 BSPB80N06S2L-06, 2N06L06 DIODE led SMD 5050 smd led 5050 datasheet SPB80N06S2L-06 SPP80N06S2L-06 ANPS071E smd diode marking 69a
smd marking code G16 Abstract: 2n06l06 ANPS071E IPB80N06S2L-06 IPP80N06S2L-06 PG-TO263-3-2 SP000218163 A6008 Text: IPB80N06S2L-06 IPP80N06S2L-06 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 6.3 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPB80N06S2L-06 IPP80N06S2L-06 PG-TO263-3-2 PG-TO220-3-1 SP0002-18163 2N06L06 smd marking code G16 2n06l06 ANPS071E IPB80N06S2L-06 IPP80N06S2L-06 PG-TO263-3-2 SP000218163 A6008
smd diode marking 69a Abstract: DIODE led SMD 5050 2N06L06 ANPS071E SPB80N06S2L-06 SPP80N06S2L-06 32F120 Text: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 6.3 mΩ ID 80 A • Logic Level • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated • dv/dt rated	Original	PDF	SPP80N06S2L-06 SPB80N06S2L-06 Q67060-S6033 2N06L06 Q67060-S6034 BSPP80N06S2L-06 BSPB80N06S2L-06, smd diode marking 69a DIODE led SMD 5050 2N06L06 ANPS071E SPB80N06S2L-06 SPP80N06S2L-06 32F120
smd diode marking 69a Abstract: 2N06L06 SPB80N06S2L-06 SPP80N06S2L-06 Text: SPP80N06S2L-06 SPB80N06S2L-06 Preliminary data OptiMOS=Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated VDS 55 RDS on 6.3 m ID 80 A P-TO263-3-2 Type Package	Original	PDF	SPP80N06S2L-06 SPB80N06S2L-06 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6033 2N06L06 P-TO263-3-2 smd diode marking 69a 2N06L06 SPB80N06S2L-06 SPP80N06S2L-06
2N06L06 Abstract: smd diode marking 69a smd marking code G16 Q67060S60 Text: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level VDS 55 R DS on 6.3 m ID 80 A P- TO263 -3-2 175°C operating temperature V P- TO220 -3-1 Avalanche rated dv/dt rated Type SPP80N06S2L-06	Original	PDF	SPP80N06S2L-06 SPB80N06S2L-06 Q67060-S6033 Q67060-S6034 2N06L06 BSPP80N06S2L-06 BSPB80N06S2L-06, smd diode marking 69a smd marking code G16 Q67060S60