2N1048 Search Results

2N1212

Abstract: 2N2101 2N1208 to-53 transistor 2n1208 2N1209 2N1616 2N1616A 2N1617 2N1617A
Contextual Info: POWER TRANSISTORS Sat Test Voltages Conditions « ! » a r a i * 7 7 * hTM msm mrm l i r a y v V A A A ma FT TYPE NO. 2N1047 TO-57 , MAXIMUM RATINGS <feCm* • i-i’n o i A w & ? V •• y " V 80 6 40 80 .5 h* . mW 12 36 .5 10 7.5 6.0 .5 .250 2N1048 40 120

2N2753

Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
Contextual Info: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068

Contextual Info: 2N1048C Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)500m

Contextual Info: 2N1048 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)120 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)7.5 @I(C) (A) (Test Condition)500m

Contextual Info: 2N1048A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)7.5 @I(C) (A) (Test Condition)500m

Contextual Info: 2N1048A+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)7.5 @I(C) (A) (Test Condition)500m

2N1048A

Abstract: 2N1049A 2N1049 2N1047A 2N1050A MARKING LI ORT
Contextual Info: M IL-S-19500/176B 13 December 1971 OTTTÌP D O P nXm11U /l OU £'U1\UUL' MIL-S-19500/176A 10 November 1965 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1047A, 2N1048A, 2N1049A AND 2N1050A This specification is mandatory for use by all D epart­

2N1050A

Abstract: T 3036 2N1047A 2N1049A 2N1048A 2n1048 2N1049
Contextual Info: MIL I C | 000D12S DDDaDfl? T | SPECS M I L - S - l9 5 0 0 /1 7 6B 13 December 1971 SUPERSEDING M IL -S -1 9 5 0 0 /1 7 6A 10 N ovem ber 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1047A, 2N1048A, 2N1049A AND 2N1050A

393A

Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
Contextual Info: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440

Contextual Info: POWER TRANSISTORS A Sat Test Voltages Conditions * 7 7 * hTM mm mrm l i r a y y V A A ma 12 36 .5 10 7.5 6.0 .5 .250 FT TYPI NO. 2N1047 TO-57 , MAXIMUM RATINGS «A « i-i’n o i A wm ? V •• y " V 80 6 40 80 .5 h« . «! » mW 2N1048 40 120 120 6 .5 12

Contextual Info: 2N1048B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)750m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)500m

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

2N1047

Abstract: SOLID POWER CORP 2n1768 2N104 2N176 2N1050A 2n1769 2N1047B 2N1048 2N1048B
Contextual Info: 8 3 6 5 7 0 0 S O L I D PO WE R C O R P 95C 0 0 1 1 6 SOLID POWER CORP T5 D "T"^3 Û f DE | fl3bS7DD DDDDllb 2 P O W E R T R A N S IS T O R S PT 2N1047 TO-57 40 aS hFE MAXIM UM RATINGS @ Ic 25°C BVcbo BV ceo BV ebo V V V A Watts TYPE NO. Ic A MIN MAX V CE

Contextual Info: , One. ^E.mL-Conducto'i LPi TELEPHONE: 973 376-2922 (212)227-6005 FAX; (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. POWER TRANSISTORS PT I 1 TYPE NO. MAXIMUM RATINGS ff%TO^ V hri ^M BvB^T V A •""W"^fc &tf Ic MfN MAX A Vet V Sat

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

2N1050A

Abstract: transistor 2n1208 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049B
Contextual Info: A P I ELECTRONI CS INC blE D • GDMaS'iS □□□02'iM bfl? ■ AfIC POWER TRANSISTORS TYPE NO. TO-57 PT @ 25°C Watts MAXIMUM RATINGS B V c b o B V ceo B V ebo Ic V V V A T-33-l Sat Voltages hFE MIN MAX Ic A V CE V VCE V be v V Test Conditions IB Ic I ebo

Contextual Info: «gl —I * i ; l e c t r i ì r u c s ini. POWER TRANSISTORS PT TYPE NO SECTION 3 TO-57 @ 25°C Watts M AXIM UM RATINGS B V c b o B V c eo B V ebo le V V A V hFE Sat Voltages Cà> le A MIN MAX VCE V V ce be V V V Test Conditions Ib le A A I eb o ma 2N1047

2SC114

Abstract: transistor 2SC114 t056 2SC114 transistor transistor t08 TRANSISTOR 2sc107 TQ59A transistor bdy88 BDY88 2SC109
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered