2N1724 Search Results

Contextual Info: GENERAL 3 9 1 6 590 ^ Ta SEMICONDUCTOR GENERAL SEMICONDUCTOR A General Semiconductor Industries, Inc • d F J b tiô s td 72C 0 1 9 3 0 D □ □ d i cî 3 0 7 ~ b 33 NPN TRANSISTOR CHIP « 5 Q U B R E TI COMPANY Typical Device Type: 2N1724, 2N5671, 2N5672

IC 4025

Abstract: 2N1724A 2N1724 sf 1012 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487
Contextual Info: NEW ENGLAND SEMICONDUCTOR STE D • bSbMTTa 0000053 5TÛ * N E S NPN TO-61 I max = 5 to 2 0 A V ceo(sus) = 4 0 -3 0 0 V fT = 1 to 4 0 MHz See page 13 for isolated collector versions [ Type No. 2N1724 2N1724A 2N1725 2N2811 PNP Comple­ ment VCE (SAT) @ IC/lB

4116 2n

Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE

2N1724

Contextual Info: 2N1724+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)3.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.0

2N1724

Abstract: 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489
Contextual Info: General Transistor Corporation CASE le m a x TO-61 ss 5 to 20A V c e o (s u s ) = 4 0 -3 0 0 V NPN Power Transistors Typ. NO. VCEO («•) M 1C (mu) (A) hFE C/VCE |n lH U l & A/Y) 2N1724 2N1724A 2N1725 2N2611 80 120 80 50 5 5 5 10 20-90 @2/15 30-90 @2/15

2N1722

Abstract: S48SC 2N1724 2N343B
Contextual Info: TYPES 2N1722, 2N1724 N-P-N TRIPLE-DIFFUSED MESA SILICON TRANSISTORS 30 09 H m C < HIGH-FREQUENCY POWER TRANSISTORS • 50 Watts at 100*C Case Temperature • Minimum h of 10 Megacyles <r 2 • Maximum Res of 0.5 Ohm at 2 Amperes k • Maximum V b i of 2 Volts at 2 Amperes lc

Contextual Info: tuff 'j ioaucti, Una. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 TYPES 2N1722A, 2N1724A N-P-N TRIPIE-DIFFUSED MESA SILICON TRANSISTORS • • • • 50 Wafts at 100°C Case Temperature

Contextual Info: TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/ 262 Devices Qualified Level 2N1722 JAN JANTX 2N1724 MAXIMUM RATINGS Ratings Symbol Value Units VCEO VCBO VEBO IC PT 80 175 10 5.0 3.0 50 175 -65 to +200 Vdc Vdc Vdc Adc W W Collector-Emitter Voltage

Contextual Info: 2N1724+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)3.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.0

2n1724

Abstract: 2N1722 1000C 2N172 to-53
Contextual Info: TECHNICAL DATA 2N1722 JAN, JTX 2N1724 JAN, JTX MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/262 NPN SILICON HIGH-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N1722 / 2N1724 Units VCEO VCBO VEBO IC PT 80 175 10 5.0 3.0 50 175 Vdc Vdc Vdc Adc W W Collector-Emitter Voltage

transistor 2N43

Abstract: 2N3491 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 PACKAGE DEVICE TYPE VcEO sus VOLTS (max) AMPS NPN TO-61 2N1724A 80 5 20-90@15 2N1724A 120 5 lAm M 2N1725 80 2N2811 • Ic ^*FE@ VcE<sat) IC/ ^ C E pr D * WATTS fr (MHz) l@2/,2 50 10 30-90@2/15 ,6@2/.2

2N1208 - 2N1212

Contextual Info: <£s.m.i-Cond.u.ctoi ^Pr 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N1618 2N1208 - 2N1212 2N1724 2N1616/A - 2N1617/A 2N2101 POWER TRANSISTORS Sat Test Voltages Conditions PT TYPE @ NO. 25aC

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

TX2N1724

Abstract: 2N1722 2N1724
Contextual Info: MIL-S-19500/262F AMENDMENT 4 21 February 1985 SUTTRSEDTfre AMENDMENT 3 1 N o v e m b e r 198 4 MILITARY SPECIFICATION S E M I C O N D U C T O R D E V I C E , T R A N S I S T O R , N PN, S I L I C O N , H I G H POWER TYPES 2N1722, TX2N1722, 2N1724, AND TX 2N 17 24

2H2904

Abstract: 2NI483-86
Contextual Info: QPL DEVICES DEVICE TYPE JAN JANTX 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714-Ì7 2N1722 2N1724 2N2015.16 2H2812.14 2N2880 2N3418-21.S 2N3439.40.L 2N3506.Û7.L 2N3584.85 M 715J6 2N3739 2N3740,41 2N3749 2H 376Ï67 2N3846.47 2N3867.68.S 2N3879

2N3622

Abstract: 2N3445 2N3446 2N3448 2n3626 TO61 MT27 2n3624 2n3492 2N1724 solitron
Contextual Info: high-rei power transistors 88 SILICON NPN TRANSISTORS 1 0 Amp BREAKDOWN VOLTAGES VeB VEB VeE TYPE NUMBER CASE SIZE 2N1724 2N1725 2N3445 2N3446 2N3447 2N3448 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N3620 2N3621 2N3622 2N3624 2N3625 2N3626 2N3628 2N3629

2N1724A

Abstract: 2N1722A
Contextual Info: TYPES 2N1722A, 2N1724A N-P-N TRIPLE-DIFFUSED MESA SILICON TRANSISTORS • 50 Watts at 100°C Case Temperature • Maxim um rcs of 0.3 Ohm at 2 Amperes lc • Maxim um V fjE of 2 V o lts at 5 Amperes lc « in w • Minim um f f of 10 Megahertz S z 5 » CD H

393A

Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
Contextual Info: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440

2N1724

Abstract: 2N1722 1000C JANTX2N1724 to-53
Contextual Info: TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/262 Devices Qualified Level 2N1722 JAN JANTX 2N1724 MAXIMUM RATINGS Ratings Symbol Value Units VCEO VCBO VEBO IC PT 80 175 10 5.0 3.0 50 175 -65 to +200 Vdc Vdc Vdc Adc W W Collector-Emitter Voltage

t460 transistor

Abstract: 2N1724 60V transistor npn 2a switching applications i442 T460 2IM1724
Contextual Info: IMPIM S ilic o n P o w e r T ra n sisto r 2IM1724 Application The SSDI 2N1724 is a NPN double epitaxial silicon power transistor designed for high reliability opera­ tion in military, space and indus­ trial applications. Fast switching speeds, low saturation voltages

Contextual Info: NEW ENGLAND SEMICONDUCTOR STE D • bSbMTTa 0000053 [ Case 805 Type No. 2N1724 2N1724A PNP Comple­ ment VCE SAT @ IC/lB ( V @ A/A) VBE (SAT) @ IC/lB (v VBE @ IC/VCE (V @ A/V) * N E S I(max) = 5 to 2 0 A V ceo(sus) = 4 0 -3 0 0 V fT = 1 to 4 0 MHz NPN TO-61

Contextual Info: Microsemi NPN Transistors Part Number NPN 2N3491 2N3489 2N3492 2N5854 2N7368 2N5622 2N5624 2N5626 2N5288 2N5289 2N5628 2N1724 2N6128 2N6S10 2N6511 2N6512 2N6514 2N6513 2N5241 2N6544 2N1902 2N1904 2N6S61 2N6S82 2N6584 2N6S85 2N6588 2N6580 2N6583 2N6586 2N6S89

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL « S EMI CON DU CT OR DE 1 3^105^0 □□□5GT5 fl 95D . 02092 D le = 5.0 AMPS - r • W 'CPi BVceo/ DEVICE TYPE PACKAGE 2N1208 2N1209 2N1212 2N1616 2N1617 TO -61 TO -61 TO -61 TO -61 TO -61 2N1618 2N1724 2N1724A 2N1725

Contextual Info: 2N1724 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)3.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.0