2N1482 Search Results

Contextual Info: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5

Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 jLf ¡11 NPN TO-5 iff /y DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A 1*FE@ IC/ ^ ce (min/max @ A/V) VcE(s»t) @ (V @ A/A)

2N3440A

Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 Hr ¡11 NPN TO-5 hr H/ VcEO Ic DEVICE TYPE sus VOLTS (max) AMPS V Vce 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A hFE@ VcE(j»t) pr D* WATTS (MHz) 1.4@.2/,02 5

2N1480

Abstract: 2N1482 2N1479 2N1481
Contextual Info: TECHNICAL DATA NPN SILICON MEDIUM POWER TRANSISTOR Qualified per MIL-PRF-19500/207 Devices 2N1479 Qualified Level 2N1480 2N1481 2N1482 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base-Current

2n1482

Contextual Info: 2N1479 – 2N1482 Qualified Levels: JAN NPN Silicon Power Transistor Available on commercial versions Qualified per MIL-S-19500/207 DESCRIPTION This family of 2N1479 through 2N1482 medium-power, planar transistors are military qualified to the JAN level for high-reliability applications.

RCA 40310

Contextual Info: Hometaxial-Base n-p-n Type Selection Charts *FE V C E O sus V C E V (sus) V v •c A V V CE V Temp.—°C V 25 IC A •B A JEDEC TO-39/TO-205M or TO-5/TO-205MA Package T 40 40 40 40 55 55 55 65 140 E CB V £2/40349 FAMILY (n-p-n) Medium Power f = 1.4 MHz typ; P j = 5 W max (2N1482); P j = 8.75 W max (40349)

JAN2N5339

Abstract: JANTX2N4150 JANS2N3439
Contextual Info: Microsemi NPN Transistors Part Number JANTXV2N3440L 2N3439 2N3439L JAN2N3439 JAN2N3439L JANS2N3439 JANS2N3439S JANTX2N3439 JANTX2N3439L JANTXV2N3439 JANTXV2N3439L 2N1479 2N1481 2N1480 2N1482 2N2890 2N2891 2N4225 2N2983 2N2985 2N2984 2N2986 2N3017 2N4150 2N4150S

LM390

Contextual Info: 2N1482 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N1482 Availability Online Store

Contextual Info: 2N1482 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100º V(BR)CBO (V)100 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175# I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N1482

Abstract: 2N1479 2N1480 2N1481
Contextual Info: TECHNICAL DATA 2N1479 JAN, JTX, JTXV 2N1480 JAN, JTX, JTXV 2N1481 JAN, JTX, JTXV 2N1482 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/207 NPN SILICON MEDIUM-POWER TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

2n1701

Abstract: 2N2035
Contextual Info: POWER TRANSISTORS TYPE NO TO-5 PT MAXIMUM RATINGS @ 25°C •ü'ÆÜl f:fKT51 l:WT51 Ic A V V V Watts 2N1116 .6 60 60 2N1117 60 60 2N1479 .6 5.0 60 40 2N1480 5.0 100 55 2N1481 5.0 60 2N1482 5.0 2N1700 6 I Hfe , A V V ce V VB£ V Ic MIN MAX Sat Voltages <iD

2N1482

Abstract: 2N1479 GG1C
Contextual Info: i ~ 3 3 -Q 5 - cq Power Transistors 2N1479, 2N1480, 2N1481, 2N1482 HARRI S S E M I C O N D S E C T O R File Number 27E D • 43D2271 135 G G 1 C1772 T ■ HAS Silicon N-P-N Power Transistors G e n e ra l-P u rp o s e T yp e s fo r M e d iu m -P o w e r A p p lic a tio n s

S S 850-03

Abstract: ST 7502 2N3742 2N5146 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418
Contextual Info: NEU EN GL A N D S E M I C O N D U C T O R STE D • b S b M T T a Ü O Ü D D S 1 725 * N E S I max = 0 .0 5 to lO A V ceo(sus) = 4 0 - 8 0 0 V fl = 1 to 5 0 MHz NPN TÜ-39/TÜ-5 Case 801 T-S3 (MAX) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 15 15 15 15 20-60 2/4

393A

Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
Contextual Info: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440

2N1482

Abstract: 2N1481 2N1479 2N1480
Contextual Info: TECHNICAL DATA NPN SILICON MEDIUM POWER TRANSISTOR Qualified per MIL-PRF-19500/207 Devices 2N1479 Qualified Level 2N1480 2N1481 JAN JANTX JANTXV 2N1482 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 NPN TO-39 NPN TO-5 DEVICE TYPE 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N4150 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237 2N5238 2N5337 2N5338 2N5339

2N3439A

Abstract: 2N1890 2N3418A 2N3419A 1016npn 2N1717A npn 505 142 transistor
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 V ceo PACKAGE NPN TO-39 /¡ I NPN TO-5 Tjr i$f Ic DEVICE TYPE sus VOLTS (m ax ) 1*FE@ V CE (m in /m ax AMPS @ A/V) 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A VcE(s»t) @ (V @ A/A)

Contextual Info: Hometaxial-Base n-p-n Type Selection Charts *FE V C E O sus V C E V (sus) V v •c A V V CE V Temp.—°C V 25 IC A •B A JEDEC TO-39/TO-205M or TO-5/TO-205MA Package T 40 40 40 40 55 55 55 65 140 E CB V £2/40349 FAMILY (n-p-n) Medium Power f = 1.4 MHz typ; P j = 5 W max (2N1482); P j = 8.75 W max (40349)

Contextual Info: 2N1482+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)100º V(BR)CBO (V)100 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175# I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N1479

Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

2N3054

Abstract: 2n3773 power Amplifier 2N1482 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . . . P t to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* A it . A A i 9U X 9U le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.