2N1480 Search Results

Contextual Info: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5

Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 jLf ¡11 NPN TO-5 iff /y DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A 1*FE@ IC/ ^ ce (min/max @ A/V) VcE(s»t) @ (V @ A/A)

2N3440A

Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 Hr ¡11 NPN TO-5 hr H/ VcEO Ic DEVICE TYPE sus VOLTS (max) AMPS V Vce 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A hFE@ VcE(j»t) pr D* WATTS (MHz) 1.4@.2/,02 5

2N1480

Abstract: 2N1482 2N1479 2N1481
Contextual Info: TECHNICAL DATA NPN SILICON MEDIUM POWER TRANSISTOR Qualified per MIL-PRF-19500/207 Devices 2N1479 Qualified Level 2N1480 2N1481 2N1482 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base-Current

AP1131

Abstract: 2N1720 2N1718 2n1482 2N2990 2N1479 2N1480 2N1481 2N1486 2N1700
Contextual Info: 0043592 A P I ELECTRON ICS INC 26C 00217 D _ _P A R A M E T E R T A B L E S A P I ELECTRONICS INC ' 2b dY ^ D O M B S T E □□□□217 E, COLLECTOR CURRENT = 1 AMP NPN TYPES Device No Case v CBO Volts 2N1479 2N1480 2N1486

transistor 1234 npn

Contextual Info: 2N1480 NPN Transistor 9.87 Transistors Bipolar Silicon NPN Power Transistors Americ. Page 1 of 1 Enter Your Part # Home Part Number: 2N1480 Online Store 2N1480 Diodes NPN Transistor Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

JAN2N5339

Abstract: JANTX2N4150 JANS2N3439
Contextual Info: Microsemi NPN Transistors Part Number JANTXV2N3440L 2N3439 2N3439L JAN2N3439 JAN2N3439L JANS2N3439 JANS2N3439S JANTX2N3439 JANTX2N3439L JANTXV2N3439 JANTXV2N3439L 2N1479 2N1481 2N1480 2N1482 2N2890 2N2891 2N4225 2N2983 2N2985 2N2984 2N2986 2N3017 2N4150 2N4150S

AP1131

Abstract: 2N1479 2N1480 2N1481 2N1486 2N1700 2N2102 AP1125 AP1127 AP1128
Contextual Info: 0043592 A P I ELECTRONICS INC _ _ _ P A R A M E T E R T A B L E S A P I EL ECTRONICS INC 2b 26C 00217 D lT | 0 0 4 3 5 ^ D 7": 3> J - o / □□□0217 L, COLLECTOR CURRENT = 1 AMP NPN TYPES Device No 2N1479 2N1480 2N1486 2N1700

2N1482

Abstract: 2N1479 2N1480 2N1481
Contextual Info: TECHNICAL DATA 2N1479 JAN, JTX, JTXV 2N1480 JAN, JTX, JTXV 2N1481 JAN, JTX, JTXV 2N1482 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/207 NPN SILICON MEDIUM-POWER TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

2N1720

Abstract: 2N1479 2N1480 2N1481 2N1486 2N1700 2N2102 AP1125 AP1127 AP1128
Contextual Info: 0043592 A P I ELECTRONICS INC 26 C _ _P A R A M E T E R T A B L E S A P I ELECTRONICS INC ' 2b 00217 dY ^ D O M B S T E D □□□□217 E, COLLECTOR CURRENT = 1 AMP NPN TYPES Device No Case v CBO Volts 2N1479 2N1480 2N1486

Contextual Info: I max = 0 .0 5 to lO A V cE O (SU S) = 4 0 -8 0 0 V fi = I to 5 0 MHz NPN TG-39/TO-5 Case 801 PNP Com ple­ ment PO @ VCEO (SUS) 1C (MAX) w w 2N1479 40 1.5 20-60@.2/4 1.4 . 21.02 3@.2/4 .25@ 60 5 150 1.5 2N1480 55 1.5 20-60@.2/4 1.4®.2/.02 3®.2/4 .25® 100

2n1701

Abstract: 2N2035
Contextual Info: POWER TRANSISTORS TYPE NO TO-5 PT MAXIMUM RATINGS @ 25°C •ü'ÆÜl f:fKT51 l:WT51 Ic A V V V Watts 2N1116 .6 60 60 2N1117 60 60 2N1479 .6 5.0 60 40 2N1480 5.0 100 55 2N1481 5.0 60 2N1482 5.0 2N1700 6 I Hfe , A V V ce V VB£ V Ic MIN MAX Sat Voltages <iD

2N1482

Abstract: 2N1479 GG1C
Contextual Info: i ~ 3 3 -Q 5 - cq Power Transistors 2N1479, 2N1480, 2N1481, 2N1482 HARRI S S E M I C O N D S E C T O R File Number 27E D • 43D2271 135 G G 1 C1772 T ■ HAS Silicon N-P-N Power Transistors G e n e ra l-P u rp o s e T yp e s fo r M e d iu m -P o w e r A p p lic a tio n s

S S 850-03

Abstract: ST 7502 2N3742 2N5146 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418
Contextual Info: NEU EN GL A N D S E M I C O N D U C T O R STE D • b S b M T T a Ü O Ü D D S 1 725 * N E S I max = 0 .0 5 to lO A V ceo(sus) = 4 0 - 8 0 0 V fl = 1 to 5 0 MHz NPN TÜ-39/TÜ-5 Case 801 T-S3 (MAX) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 15 15 15 15 20-60 2/4

NSP5665

Abstract: sat 1205
Contextual Info: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *

2N1482

Abstract: 2N1481 2N1479 2N1480
Contextual Info: TECHNICAL DATA NPN SILICON MEDIUM POWER TRANSISTOR Qualified per MIL-PRF-19500/207 Devices 2N1479 Qualified Level 2N1480 2N1481 JAN JANTX JANTXV 2N1482 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

Contextual Info: 2N1480+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)100º V(BR)CBO (V)100 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175# I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 NPN TO-39 NPN TO-5 DEVICE TYPE 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N4150 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237 2N5238 2N5337 2N5338 2N5339

2N3439A

Abstract: 2N1890 2N3418A 2N3419A 1016npn 2N1717A npn 505 142 transistor
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 V ceo PACKAGE NPN TO-39 /¡ I NPN TO-5 Tjr i$f Ic DEVICE TYPE sus VOLTS (m ax ) 1*FE@ V CE (m in /m ax AMPS @ A/V) 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A VcE(s»t) @ (V @ A/A)

2N1479

Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

2n5863

Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Contextual Info: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V

rca 101m

Abstract: Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50