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    2N1889 Search Results

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    ITT Interconnect Solutions 2N1889

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    Bristol Electronics 2N1889 50 1
    • 1 $10.575
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    • 100 $6.6094
    • 1000 $6.6094
    • 10000 $6.6094
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    Quest Components 2N1889 40
    • 1 $14.1
    • 10 $10.575
    • 100 $9.5175
    • 1000 $9.5175
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    2N1889 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N1889 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=60 / Ic=0.25 / Hfe=40-120 / fT(Hz)=50M / Pwr(W)=0.8 Original PDF
    2N1889 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package Bipolar NPN Device - Pol=NPN / Pkg=TO39 / Vceo=60 / Ic=0.25 / Hfe=40-120 / fT(Hz)=50M / Pwr(W)=0.8 Original PDF
    2N1889 API Electronics Short form transistor data Short Form PDF
    2N1889 API Electronics Low Frequency Silicon Power Transistor Scan PDF
    2N1889 API Electronics Short form transistor data Short Form PDF
    2N1889 Central Semiconductor NPN- METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N1889 Central Semiconductor NPN Metal Can Switching and General Purpose Transistors Scan PDF
    2N1889 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N1889 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N1889 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N1889 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1889 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1889 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1889 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1889 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1889 Unknown GE Transistor Specifications Scan PDF
    2N1889 Unknown GE Transistor Specifications Scan PDF
    2N1889 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N1889 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N1889 Unknown Transistor Replacements Scan PDF

    2N1889 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N1889 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A) Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)75 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)50m


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    PDF 2N1889 Freq50M

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2N1889

    Abstract: No abstract text available
    Text: 2N1889 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


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    PDF 2N1889 O205AD) 1-Aug-02 2N1889

    2n1720

    Abstract: 2N1716 N2989 2N1718 2N1252 2N3665 2N5682 MT-13 2N2993 2N4001
    Text: high-rei power transistors 77 SILICON NPN TRANSISTORS 2 Amp BREAKDOWN VOLTAGE I TYPE NUMBER CASE SIZE 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 N2988 N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720 2N1889 2N1890 N2989 2N3665 2N5682 MT-13 2N2993 2N4001

    2N1718

    Abstract: 2N1720 2N1714
    Text: 8440355 SPACE POWER SPACE POWER 89C ELECTRONICS 00098 D J^JS~0 DE | 5440355 ODOOOIA 0 Hi-Rel PLANAR P O W E R — 2 AMP NPN ELECTRONICS FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T ENGINEERING MOTES I (Three Leads (Dim. .011 mln. and .019 aax.) applies between (.050


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    2N2243

    Abstract: 2n2405
    Text: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B


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    PDF 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N2243 2n2405

    Untitled

    Abstract: No abstract text available
    Text: COLLECTOR CURRENT = 2 AMPS NPN TYPES 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238 2N4239 2N4240 2N4862 2N4863 2N4864 2N4910 2N4911 2N4912 2N5050


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719

    2n1833

    Abstract: 2N720 n719 2N1890 2n871 2N698 2N719 2N1889 2N639
    Text: TYPES 2N698, 2N639. 2N719, 2N719A, 2N720, 2N720A. 7.nm 2N871, 2N1889, 2N1890, 2N1893 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 7 3 3 4 4 2 , M A Y 1 9 6 3 - R E V I S E D M A R C H 1 9 7 3 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications


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    PDF 2N698, 2N639. 2N719, 2N719A, 2N720, 2N720A. 2N871, 2N1889, 2N1890, 2N1893 2n1833 2N720 n719 2N1890 2n871 2N698 2N719 2N1889 2N639

    2n 699

    Abstract: 2N698 2N719A 2N699 2n720
    Text: TYPES 2N698, 2N699. 2N719. 2N719A, 2 N / 2 Q 2N720A 2H970 2N871. 2N1889. 2N1890. 2N1893 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 7 3 3 4 4 2 . M A Y 1 9 6 3 - R E V I S E D M A R C H 197 3 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications


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    PDF 2N698, 2N699. 2N719. 2N719A, 2N720A 2N871. 2N1889. 2N1890. 2N1893 2N719, 2n 699 2N698 2N719A 2N699 2n720

    2N2243

    Abstract: No abstract text available
    Text: DEVICE TYPF pa c k a g e ByCEO BVC80 BVEBO ICBO @ VCB IV i M- N i V l M>N . MN i •• A1 MAX JV» HFE @ VC & IC MIN MAR .V COB J v*. FT 2N1507 2N1566 2N16I3 2N1711 2N1889 NPN NPN NPN NPN NPN ro-5 ro-5 TO 5 ro- 5 TO-5 30 60 50 50 60 60 00 75 75 100 5 5 7


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    PDF BVC80 2N1507 2N1566 2N16I3 2N1711 2N1889 2NI890 2NI973 2N1974 2N1975 2N2243

    2N1718

    Abstract: 2N1720 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717
    Text: Ü J iä ELECTRONICS, INC. \ - 7 PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES Device No 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720 2N1721 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720

    Untitled

    Abstract: No abstract text available
    Text: Ú j ÍM E LE C T R O N IC S , INC. \ - 7 PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES Device No 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720 2N1721 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719

    2N1252

    Abstract: 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719
    Text: Ú j ÍM E LE C T R O N IC S , INC. \ - 7 PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES Device No 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720 2N1721 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719

    sC3228

    Abstract: BC286 bc 7-25 pnp MPS9681T BC527-25 BC5508 BC537 BC5568 2N5222 8C416
    Text: CRIMSON SEMICONDUCTOR INC TT 25 14 09 6 C R I M S O N S E M I C O N D U C T O R 99D 00293 DEVICF 2N1507 2N1566 2N I613 2 N I7 U 2N1889 2N1890 TYPE NPN NPN NPN NPN NPN PACKAGE DE | S S I M Q T L INC D T Ô / - COB HFE @ VC & iC By.CEO BVCBO BVEBO ICBO @ VCB


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    PDF 15514CHb 2N1507 2N1566 2NI613 2N1889 2N1890 2N1893 2N1973 2N1974 O-237 sC3228 BC286 bc 7-25 pnp MPS9681T BC527-25 BC5508 BC537 BC5568 2N5222 8C416

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    transistor vergleichsliste

    Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
    Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G


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    MA3232

    Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF BVCBO-100V BVCE0-80V BVEBO-15V BVCBO-60V BVCEO-40V BVCB0-80V BVCE0-60V BVCB0-100V MA3232 BF123 CA3036 FT4017 2n1613 replacement A431 BF121 DIODE SJ 98 DM01B

    transistor a640

    Abstract: transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor a640 transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918

    n4300

    Abstract: 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N1507 2N3419 2N1711
    Text: Case T ype No. C o n s tru c tio n see note 1 Silicon Transistors M a xim u m R a tin g s a t2 5 °C am b. S P E C IA L C h a ra c te ris tic s FE A T U R E S h h FE V CB V V CE V v EB V •c A 15 2 30 15 2 M in. P to t W mA 0-2 10 50 20 0-2 10 50 20 Max.


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    PDF TIXS12 TIXS13 1200t 2N696 2N697 2N698 2N1507 2N1613 2N1711 2N3418 n4300 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N3419

    2N244

    Abstract: bfy5
    Text: TO-39 METAL-CAN PACKAGE TRAN SISTO RS NPN Type No. tßO m Max VCB (V) hFE VCB0 VCEO VEBO (V) Min (V) Min (V) Min 2N3439 450 350 7 20.000 360 40 2N3742 300 300 7 0.200 200 lc •& VCE (mA) (V) Min Max (MA) (V) Max 0.75 15 10.0 1.00 200 30.000 10.0 50.000


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    PDF 2N3439 2N3742 BF259 2N19S7 2N2195 BSY52 2N1838 2N1B40 2N1644 2N1990 2N244 bfy5

    2n3298

    Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
    Text: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max


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    PDF 2N1613 2N16I3A 2N1613B 2N17I1 2N17IIA 2N3725A 2N3947 2N40B0 2N4137 2N4207 2n3298 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    2N2049

    Abstract: 2N1132 2N1420 2N1507 2N1566 2N1613 2N1613A 2N1613B 2N720A 2N721
    Text: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE HFE MAXIMUM RATINGS VCEO Pd IC mW (V) min max (A) IC (mA) 10 10 10 10 10 Cob COMPLE­ max MENTARY TYPE (PF) (A) fT min (MHz) 5 1.5 1.2 1.5 1.5 0.15 0.15 0.05 0.15 0.15 50 50 50 70 60 15 45 15


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    PDF 2N720A 2N721 2N91I 2N956 2N1132 2N1420 2N1507 2N1566 2N1613 2N1613A 2N2049 2N1613B

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


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    PDF 00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238