2N221 Search Results

2N2218AL

Abstract: 2N2218ALJ 2N2218ALJX
Contextual Info: 2N2218AL Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2218ALJ • JANTX level (2N2218ALJX)

2N2219AL

Abstract: 2N2219ALJ 2N2219ALJS 2N2219ALJX
Contextual Info: 2N2219AL Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2219ALJ • JANTX level (2N2219ALJX)

Contextual Info: 2N2219AHR Hi-Rel NPN bipolar transistor 40 V, 0.8 A Datasheet — production data Features BVCEO 40 V IC max 0.8 A HFE at 10 V - 150 m > 100 Operating temperature range - 65 °C to + 200 °C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics

Contextual Info: 2N2218A Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N2218AJ • JANTX level (2N2218AJX)

Transistor 2N2219A

Contextual Info: 2N2219A Silicon NPN Transistor Data Sheet Description Applications Semicoa Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2219AJ • JANTX level (2N2219AJX)

HFE6

Contextual Info: 2N2218 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N2218J • JANTX level (2N2218JX) • JANTXV level (2N2218JV)

Contextual Info: 2N2219AHR NPN low power transistor for Hi-Rel applications Features • Low voltage ■ Low current ■ Linear gain characteristics Applications ■ Low current switching ■ Linear preamplifier TO-39 Description The 2N2219AHR is a silicon planar epitaxial NPN

250M

Abstract: 2N2218AX
Contextual Info: 2N2218AX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016)

250M

Abstract: 2N2218A
Contextual Info: 2N2218A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016)

2N2219 transistor

Abstract: 250M 2N2219
Contextual Info: 2N2219 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)

tn-59

Abstract: 2222 NPN N 2222 2N2221 2N2221A 2N2222A 2N2369 2N2906 2N2906A 2N2907
Contextual Info: A/Ietal-Encased SPRAGUE Silicon SEPT T ran sistors HIGH-SPEED, MEDIUM CURRENT Type No. 2N2221 2N2221A 2N2222 2N2222A 2N2369 2N2906 2N2906A 2N2907 2N2907A 2N3115 2N3116 2N3135 2N3136 TN-54 TN-60 TN-62 TN-64 TQ-60 TQ-62 TQ-64 2N1469 2 N1469A 2N2218 2N2218A

Contextual Info: 30E D *57 6 S • T 'i S 'I S a ? G 031115 S C S -T H O M S O N H L U m *! 3 ■ 2 N 2 2 1 8 A -2 N 2 2 1 9 A 2 N 2 2 2 1 A -2 N 2 2 2 2 A S-THOMSON H IG H SP EE D SWITCHES DESC RIPTIO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec

2N2222A 331

Abstract: 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331
Contextual Info: MOTOROLA SC XSTRS/R 12E F 2N2218A 2N2219A 2N2221A 2N2222A 2N5581 2N55S2 Unît 40 40 Vdc Vdc Sym bol 2N2218 2N2219 2N2221 2N2222 Collector-Emitter Voltage v CEO 30 Collector-Base Voltage VCBO 60 75 75 Emrtter*Base Voltage Ve b o 5.0 6.0 6.0 Vdc 'c 800 800 800

2N2219AT1

Abstract: st marking code 2N2219AHR
Contextual Info: 2N2219AHR Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BVCEO 40 V IC max 0.8 A HFE at 10 V - 150 mA > 100 Operating temperature range - 65 °C to + 200 °C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL

Contextual Info: N AMER P H I L I P S / D I S C R E T E D BSE • T~-2’7~0I bl3S3T31 D O l b n a S ■ Small Signal Devices GENERAL PURPOSE AND SWITCHING TRANSISTORS - NPN TYPES TYPE PKG . bvc eo - te . • ^ /- : *T r >c - i _-iiiln : 2N1613 2N1711 2N1893 2N2218 2N2219

Contextual Info: 2N2219A Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2219AJ • JANTX level (2N2219AJX)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N2219A SWITCHING TRANSISTOR Features • • • • • Collector - Base Voltage 75 V Collector - Current 800 mA

2N2219

Contextual Info: 2N2219, 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/251 Qualified • Available as JAN, JANTX, and JANTXV 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic

N3020

Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A
Contextual Info: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F | n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220

BEL100N

Abstract: bel 100n transistor 41 bf BEL100 BEL100N TRANSISTOR transistor BF 245 BEL 167 transistor BEL 100N BEL BF200 BF200 transistor
Contextual Info: Si Device No VCEO Volts mm V cB O Volts mm V ebo Volts mm hFE at bias mm /max Ic mA V ce Volts 1 CM Plot ICBO mA mW uA max max typ V ce Sat Volts typ M Hz Cob Pt- typ typ ÍT ts N ns typ dB typ toff nsec — f Package NPN SWITCHING TRANSISTORS 20. 2N2218

2N2218

Abstract: 386 amplifier
Contextual Info: 2N2218 NPN Small Signal General Purpose Amplifier & Switch. 3.86 Tr. 1 of 2 Home Part Number: 2N2218 Online Store 2N2218 Diodes NPN Sm all Signal G eneral Purpo s e Am plifier & Sw it ch. Transistors

TRANSISTORS BJT list

Abstract: 2N2217
Contextual Info: 2N2217 Si NPN LP HF BJT 2.00 Transistors Transistors Bipolar Si NPN. 1 of 1 Home Part Number: 2N2217 Online Store 2N2217 Diodes Si NPN LP HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N2219

Abstract: 2N2219A 2n2218 2N2218A Transistor 2N2219A Transistor 2N2218a 2n2219a npn transistor 2N2218-2N2219
Contextual Info: TECHNICAL DATA 2N2218, 2N2218A JAN, JTX, JTXV 2N2218AL JAN, JTX, JTXV 2N2219, 2N2219A JAN, JTX, JTXV 2N2219AL JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/251 NPN SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage

Contextual Info: 2N2218A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016)