2N227 Search Results
2N227 Price and Stock
Central Semiconductor Corp 2N2270-PBFREETRANS NPN 45V 1A TO-39 |
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2N2270-PBFREE | Bulk | 992 | 1 |
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Microchip Technology Inc 2N2270TRANSISTOR POWER BJT |
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2N2270 | Bulk | 100 |
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2N2270 | Bulk | 22 Weeks | 100 |
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2N2270 |
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2N2270 | Bulk | 100 |
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2N2270 | 682 | 22 Weeks |
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2N2270 |
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2N2270 | 10 |
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2N2270 |
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Central Semiconductor Corp 2N2270-TIN-LEAD45V 1A 1W TH TRANSISTOR-SMALL SI |
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2N2270-TIN-LEAD | Box | 1,000 |
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Central Semiconductor Corp 2N2270- Boxed Product (Development Kits) (Alt: 2N2270) |
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2N2270 | Box | 6 Weeks | 500 |
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2N2270 | 4 |
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Central Semiconductor Corp 2N2270 TIN/LEADTransistor GP BJT NPN 45V 1A 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N2270 TIN/LEAD) |
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2N2270 TIN/LEAD | Box | 111 Weeks | 1,000 |
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2N2270 TIN/LEAD |
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2N227 Datasheets (146)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N227 |
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Motorola Semiconductor Datasheet Library | Scan | 65.75KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N227 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 33.51KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N227 | Unknown | Transistor Shortform Datasheet & Cross References | Scan | 82.2KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N227 | Unknown | Basic Transistor and Cross Reference Specification | Scan | 45.73KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N227 | Unknown | GE Transistor Specifications | Scan | 42.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N227 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 154.97KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N227 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 99.33KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N227 | Unknown | Shortform Transistor Datasheet Guide | Short Form | 89.45KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N227 | Unknown | Vintage Transistor Datasheets | Scan | 46.71KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N2270 |
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Leaded Small Signal Transistor General Purpose | Original | 54.62KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N2270 |
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Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 45V 1A TO-39 | Original | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N2270 | Advanced Semiconductor | Silicon Transistor Selection Guide | Scan | 393.54KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N2270 |
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NPN METAL CAN - SWITCHING AND GENERAL PURPOSE | Scan | 344.75KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N2270 | Continental Device India | Semiconductor Device Data Book 1996 | Scan | 92.45KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N2270 | Crimson Semiconductor | Transistor Selection Guide | Scan | 1.48MB | 36 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N2270 |
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Full Line Condensed Catalogue 1977 | Scan | 52.97KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N2270 | Ferranti Semiconductors | Shortform Data Book 1971 | Short Form | 81.15KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N2270 | Ferranti Semiconductors | Quick Reference Guide 1985 | Scan | 80.94KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N2270 | Ferranti Semiconductors | Metal Can Transistors (Short Form) | Scan | 148.09KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N2270 | General Diode | Transistor Selection Guide | Scan | 608.68KB | 10 |
2N227 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2N2271 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15ã V(BR)CBO (V)20 I(C) Max. (A)500m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.50 h(FE) Max. Current gain.100 |
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2N2271 Freq10k | |
Contextual Info: TY P E 2N2270 N -P -N SILIC ON TR A N S IS TO R B U L L E T IN N O . D L -S 7 3 1 1 9 4 7 , M A R C H 1 9 7 3 FOR M EDIUM -PO W ER, G E N E R A L PURPOSE A PPLICATIO N S •mechanical data absolute maximum ratings at 25°C case temperature unless otherwise noted |
OCR Scan |
2N2270 | |
RCA-2N2270
Abstract: 2N2270 2N2270 RCA rca 2N2270 transistor 2n2270 SILICON TRANSISTOR FS 2 RCA Solid State Power Transistor
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0D170T7 2N2270 RCA-2N2270 92CS-III79RI 2N2270 2N2270 RCA rca 2N2270 transistor 2n2270 SILICON TRANSISTOR FS 2 RCA Solid State Power Transistor | |
2N2270
Abstract: transistor 2n2270
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2N2270 com/2n2270 2N2270 transistor 2n2270 | |
2N2270Contextual Info: 2N2270 MAXIMUM RATINGS R ating Sym bol V alu e U n it C o lle c to r-E m itte r V o lta g e v CEO 45 Vdc C o lle c to r -E m itte r V o lta g e , RgE *= 10 O h m s V CER 60 Vdc C o lle c to r-B a s e V o lta g e v CBO 60 V dc E m itte r-B a s e V o lta g e |
OCR Scan |
2N2270 O-205AD) 2N2270 | |
2N2273
Abstract: germanium pnp transistor
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OCR Scan |
2N2273 2N2273 10MHz 10MHz germanium pnp transistor | |
Contextual Info: 2N2279 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)140þ I(CBO) Max. (A)1.0n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N2279 Freq67M | |
Contextual Info: 2N2275 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)140þ I(CBO) Max. (A)3.0n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N2275 | |
Contextual Info: 2N2274 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)140þ I(CBO) Max. (A)3.0n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N2274 | |
2N2270
Abstract: transistor 2n2270
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2N2270 C-120 2N2270Rev 040904E 2N2270 transistor 2n2270 | |
2N2270ALContextual Info: 2N2270AL Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) |
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2N2270AL O205AA) 20-Aug-02 2N2270AL | |
2N2273Contextual Info: 2N2273 GERMANIUM PNP TRANSISTOR DESCRIPTION: The 2N2273 is Designed for General Purpose Switching, and VHF Amplifier Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS < o m Ie p d is s 1OO mA -15 V 15O mW @ Ta $ 25 °C Tj -65 0C to +1OO 0C Ts tg -65 0C to +1OO 0C |
OCR Scan |
2N2273 | |
2n3072Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE(sat) VCE max (V) (V) (A) 2N2243A 2N2270 2N2297 2N2303 2N2309 N N N P N TO-39 TO-39 TO-39 TO-39 TO-39 800 1000 800 600 600 1 1 1 0.5 |
OCR Scan |
2N2243A 2N2270 2N2297 2N2303 2N2309 2N2380 2N2380A 2N2405 2N2479 2N2800 2n3072 | |
harris 2n2270
Abstract: 2n2270 27e transistor
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OCR Scan |
2N2270 2N2270 92CS-III79RI harris 2n2270 27e transistor | |
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2N2270
Abstract: transistor 2n2270 RCA-2N2270 RCA Solid State Power Transistor D-07 2N2270 RCA
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OCR Scan |
2N2270 RCA-2N2270 92CS-IU7IH2 92CS-III79RI GD171DQ 2N2270 transistor 2n2270 RCA Solid State Power Transistor D-07 2N2270 RCA | |
transistor 2n2270
Abstract: 2n2270 2N2270 equivalent
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ISO/TS16949 2N2270 C-120 2N2270Rev 040904E transistor 2n2270 2n2270 2N2270 equivalent | |
Contextual Info: 2N2278 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)140þ I(CBO) Max. (A)1.0n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N2278 | |
Contextual Info: 2N2277 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)15 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)140þ I(CBO) Max. (A)3.0n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N2277 | |
2N3019A
Abstract: 2N3501A
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OCR Scan |
O-5/TO205AD/TO-39 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N3019A 2N3501A | |
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N2270 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION |
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2N2270 C-120 2N2270Rev210901 | |
ESM2369
Abstract: 2N3605A MPS4275 2n3564 2N4418 2SC321H tis49 2N3606 BSY19 BSX88
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EN914 2N708 2N914A BSY19 2N3605A 2N3606A ESM2369 MPS4275 2n3564 2N4418 2SC321H tis49 2N3606 BSX88 | |
2N2270Contextual Info: 2N2270 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2270 is a NPN silicon transistor, mounted in a hermetically sealed package, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER |
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2N2270 100mA, 100mA 150mA, 150mA 17-August | |
Contextual Info: 2N227 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)150m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)65õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.20 h(FE) Max. Current gain.120 |
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2N227 Freq400k | |
Contextual Info: 2N2270 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).90 @I(C) (A) (Test Condition)150m |
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2N2270 Freq60M |