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    2N2649 Search Results

    2N2649 Datasheets (6)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N2649
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 81.79KB 1
    2N2649
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 99.35KB 1
    2N2649
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 204.41KB 2
    2N2649
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 90.48KB 1
    2N2649
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 86.93KB 1
    2N2649
    Unknown GE Transistor Specifications Scan PDF 40.97KB 1

    2N2649 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2N2649 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)65 V(BR)CBO (V)65 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)8.7 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.


    Original
    2N2649 Freq100M Code3-12 PDF

    B3597

    Abstract: B3603 4JD7A35 2N2649 B3604 bfs23 BLY25 sdt1665 2N2485 MHT9003
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


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    NPN110. 300MS BR101FS MT50a BR200B5 200MS BR201BS B3597 B3603 4JD7A35 2N2649 B3604 bfs23 BLY25 sdt1665 2N2485 MHT9003 PDF

    2N2648

    Abstract: BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601
    Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 BCX59-7 BC107AP BC560 BCY59 BCY59VII BC582 BC582 BC582 2N3043 2N3044 2N304:, 2N2642 2N2643 2N2644 JC501P BCY76 BCY76 MD2974


    Original
    BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 2N2648 BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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