2N2906U Search Results

2N2906U Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2N2906U		Korea Electronics	EPITAXIAL PLANAR PNP TRANSISTOR		Original	PDF

2N2906U Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N2906U Abstract: No abstract text available Text: SEMICONDUCTOR 2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage	Original	PDF	2N2906U -50nA -50mA, x10-4 -10mA, -10mA -50mA -100mA 2N2906U
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR 2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM A A1 B 1 6 2 5 3 4 A C : ICEX=-50nA Max. , IBL=-50nA(Max.) A1 C Low Leakage Current @VCE=-30V, VEB=-3V. D Excellent DC Current Gain Linearity.	Original	PDF	2N2906U -50nA -50mA,
1N916 Abstract: 2N2906E 2N2906U Text: SEMICONDUCTOR 2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM A A1 B 1 6 2 5 3 4 A C : ICEX=-50nA Max. , IBL=-50nA(Max.) A1 C Low Leakage Current @VCE=-30V, VEB=-3V. D Excellent DC Current Gain Linearity.	Original	PDF	2N2906U -50nA -50mA, 1N916 2N2906E 2N2906U
2N2906U Abstract: No abstract text available Text: SEMICONDUCTOR 2N2906U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking ZC 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark ZC 2N2906U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.	Original	PDF	2N2906U 2N2906U