2N2906U
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage
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2N2906U
-50nA
-50mA,
x10-4
-10mA,
-10mA
-50mA
-100mA
2N2906U
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM A A1 B 1 6 2 5 3 4 A C : ICEX=-50nA Max. , IBL=-50nA(Max.) A1 C Low Leakage Current @VCE=-30V, VEB=-3V. D Excellent DC Current Gain Linearity.
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2N2906U
-50nA
-50mA,
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1N916
Abstract: 2N2906E 2N2906U
Text: SEMICONDUCTOR 2N2906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM A A1 B 1 6 2 5 3 4 A C : ICEX=-50nA Max. , IBL=-50nA(Max.) A1 C Low Leakage Current @VCE=-30V, VEB=-3V. D Excellent DC Current Gain Linearity.
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2N2906U
-50nA
-50mA,
1N916
2N2906E
2N2906U
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2N2906U
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N2906U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking ZC 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark ZC 2N2906U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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2N2906U
2N2906U
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