2N3019J Search Results
2N3019J Price and Stock
Microchip Technology Inc 2N3019JAN/TRTransistor GP BJT NPN 80V 1A 3-Pin TO-5 T/R - Tape and Reel (Alt: JAN2N3019/TR) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N3019JAN/TR | Reel | 100 |
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Microchip Technology Inc 2N3019JANTX/TRTransistor GP BJT NPN 80V 1A 3-Pin TO-5 T/R - Tape and Reel (Alt: JANTX2N3019/TR) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N3019JANTX/TR | Reel | 100 |
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Microchip Technology Inc 2N3019JANTXV/TRTransistor GP BJT NPN 80V 1A 3-Pin TO-5 T/R - Tape and Reel (Alt: JANTXV2N3019/TR) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N3019JANTXV/TR | Reel | 100 |
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CDAS 2N3019JANTX |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N3019JANTX | 23 |
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2N3019JANTX | 18 |
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Motorola Semiconductor Products 2N3019JANS |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N3019JANS | 40 |
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2N3019J Datasheets (11)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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2N3019J | Semico | Package = TO-5 Level = Jans Vceo (V) = 80 Vcbo (V) = 140 Vebo (V) = 7.0 Ic (A) = 1.00 Power (W) ta = 0.8 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 | Original | |||
2N3019JAN | New England Semiconductor | LOW POWER NPN SILICON TRANSISTOR | Original | |||
2N3019JAN | New England Semiconductor | BJT: NPN: Small Signal Transistor: IC 1A | Original | |||
2N3019JANS | New England Semiconductor | LOW POWER NPN SILICON TRANSISTOR | Original | |||
2N3019JANS | New England Semiconductor | BJT: NPN: Small Signal Transistor: IC 1A | Original | |||
2N3019JANTX | New England Semiconductor | LOW POWER NPN SILICON TRANSISTOR | Original | |||
2N3019JANTXV | New England Semiconductor | LOW POWER NPN SILICON TRANSISTOR | Original | |||
2N3019JS | Semico | Package = TO-5 Level = Jans Vceo (V) = 80 Vcbo (V) = 140 Vebo (V) = 7.0 Ic (A) = 1.00 Power (W) ta = 0.8 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 | Original | |||
2N3019JTX | New England Semiconductor | BJT: NPN: Small Signal Transistor: IC 1A | Original | |||
2N3019JV | Semico | Package = TO-5 Level = Jans Vceo (V) = 80 Vcbo (V) = 140 Vebo (V) = 7.0 Ic (A) = 1.00 Power (W) ta = 0.8 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 | Original | |||
2N3019JX | Semico | Package = TO-5 Level = Jans Vceo (V) = 80 Vcbo (V) = 140 Vebo (V) = 7.0 Ic (A) = 1.00 Power (W) ta = 0.8 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 | Original |
2N3019J Datasheets Context Search
Catalog Datasheet | MFG & Type | Document Tags | |
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2N3019
Abstract: 2N3019J 2N3019JS 2N3019JV 2N3019JX 2N3019 DIE
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2N3019 MIL-PRF-19500 2N3019J) 2N3019JX) 2N3019JV) 2N3019JS) MIL-STD-750 MIL-PRF-19500/391 2N3019 2N3019J 2N3019JS 2N3019JV 2N3019JX 2N3019 DIE | |
2N3019 DIE
Abstract: No abstract text available
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Original |
2N3019 MIL-PRF-19500 2N3019J) 2N3019JX) 2N3019JV) 2N3019JS) MIL-STD-750 MIL-PRF-19500/391 2N3019 DIE | |
2n3019
Abstract: No abstract text available
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Original |
2N3019 MIL-PRF-19500 2N3019J) 2N3019JX) 2N3019JV) 2N3019JS) 2N3019JSR) MIL-STD-750 MIL-PRF-19500/391 2n3019 | |
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
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OCR Scan |
AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 |