2N3404 NPN Search Results

2N3404 NPN Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8
2SC5200	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L)

2N3404 NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2n3404 Contextual Info: 2N3404 Si NPN Lo-Pwr BJT 4.70 Transistors Transistors Bipolar Si NP. 1 of 1 Home Part Number: 2N3404 Online Store 2N3404 Diodes Si NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits	Original	2N3404 com/2n3404 2N3404	PDF
2N3402 Abstract: 2n3404 2N3405 2N3403 2N3638 N3404 2N2711 2N2712 2N2713 2N2714 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3402 2n3404 2N3405 2N3403 2N3638 N3404	PDF
2N4425 Abstract: GES6220-J1 2N3404 2N3405 GES6220 HS5306 Contextual Info: Sm all signal Transistors TO-92HS Case PD @ TC =25°C =1 0Watt TYPE NO. 2N3402 POLARITY BVc b o BVc e O NPN bveb0 >CBO v CBO <V) (V) (V) <nA) MIN MIN MIN MAX 25 25 5.0 100 hl•E 00 MIN o lC e v CE <mA) (V) MAX NF VCE(SA T ) « ' C c ob <mA) m (MHz) (dB)	OCR Scan	O-92HS 2n3402 2n3403 2n3404 2n3405 2n4425 hs3402 hs3403 ges6015-j1 ges6016-j1 GES6220-J1 GES6220 HS5306	PDF
Contextual Info: ALLEGRO MICROSYSTEMS 8514019 INC SPRAGUE. T3 » • G50433Ö G003SÖS SEM ICO ND S/ ICS 93D G ■ AL6R 03 585 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘T P ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C *CBO Max. ^ BRICBO V r CEO V(BR)EBO Max. (a ^CB »W hFE Oi ic	OCR Scan	G50433Ã G003SÃ TP918 TP930 TP2218 TP2218A TP2219 TP2219A TP2221 TP2221A	PDF
Contextual Info: Small signal Transistors TO-92HS Case Pd @Tq =25°C =1 .OWatt TYPE NO. 2N3402 POLARITY BV c b o BVCEo BVEb o NPN ICBO v CBO (V) (V) (V) <nA) MIN MIN MIN MAX 25 25 5.0 100 e ic hl=E (mA) (V) 25 MIN MAX 75 225 ® VCE (V) VCE(SA T ) ® ' C (V) 4.5 0.3 *T NF	OCR Scan	O-92HS 2N3402 2N3403 2N3404 2N3405 GES6218-J1 GES6219-J1 GES6220-J1 GES6221-J1 Q002U27	PDF
2N3405 Abstract: transistors equivalent AP 3706 P mps3702 MPS3704 equivalent T0-92B transistors mps3704 2N3404 2n3402 Contextual Info: 2N3702 trough 2N 3706 MPS 3702 through MPS 3706 I PNP . NPN SILICON GENERAL PURPOSE AP TRANSISTORS THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AP MEDIUM POWER APPLICATIONS. THE 2N3702 SERIES ARE SUPPLIED IN CASE TO-92B. THE MPS3702 SERIES ARE SUPPLIED IN	OCR Scan	2N3702 O-92B. MPS3702 T0-92A. T0-92B T0-92A 2N/MPS3702 2N/MPS3703 360mW 2N3405 transistors equivalent AP 3706 P MPS3704 equivalent T0-92B transistors mps3704 2N3404 2n3402	PDF
2N2924 Abstract: 2N3856 2N3404 2N2712 2N2714 2N3856A 2n2923 2N3405 n3860 2N2711 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3856 2N3404 2N3856A 2N3405 n3860	PDF
n3860 Abstract: 2N2713 2N292 2N2925 2N2711 2N2712 2N2714 2N2923 2N2924 2N2926 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 n3860 2N292	PDF
Contextual Info: SPRAGUE/SEMICOND GROUP T3 D • ÖS13ÖSO 0Ü03SÔS ! 8 5 1 4 0 1 9 SPRAGUE. SEM ICONDS/ IC S 1 ■ 93D 0 35 85 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO	OCR Scan	1flS13fiSQ O-226AA/STYLE	PDF
2N2925 Abstract: 2N3405 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3405 n3860	PDF
BSY44 Abstract: 2SC634A SA2720 2n3404 2SC503 2S0220 2SC109A 2N2193 LOW-POWER SILICON NPN 2SC486 Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216	Original	2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 BFY34 SA2710 BSY44 2SC634A SA2720 2n3404 2SC503 2S0220 2SC109A 2N2193 LOW-POWER SILICON NPN	PDF
T092A Abstract: T0-92A 2N5451 2N3402 AP 3706 P MPS3704 equivalent 2N5702 2N3404 MPS3704 2N3417 equivalent Contextual Info: 2N3702 trough 2N 3706 MPS 3702 through MPS 3706 I PNP . NPN SILICON GENERAL PURPOSE AP TRANSISTORS CASE T0-92B THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AP MEDIUM POWER APPLICATIONS. THE 2NJ702 SERIES ARE SUPPLIED IN CASE TO-92B. THE MPS3702 SERIES ARE SUPPLIED IN	OCR Scan	2N3702 O-92B. MPSJ702 T0-92A. O-92B T0-92A 2N/MPS3702 2N/MPS3703 2N/MPS3704 2N/MPS3705 T092A T0-92A 2N5451 2N3402 AP 3706 P MPS3704 equivalent 2N5702 2N3404 MPS3704 2N3417 equivalent	PDF
2N3643 TO-105 Abstract: 2N3566 2N3569 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N3568 central Contextual Info: T 1989963 "CENTRAL SEMICONDUCTOR 61C 00210 TËT\| 1l i m b 3 QDD0210 D \| L .1 NPN EPOXY - SWITCHING AND GENERAL PURPOSE VCB V CE V EB hFE at *C V V V min max mA 2N2711 2N2712 2N2713 2N2714 2N2923 18 18 18 18 25 18 18 18 18 25 5 5 5 5 5 30 75 30 75 90 90 225	OCR Scan	DD00S10 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926 2N3392 CBR12 2N3643 TO-105 2N3566 2N3569 2N3568 central	PDF
Contextual Info: 1989963 "CENTRAL SEMICONDUCTOR -_ ~ V\. 61C 00210 T d T I n a n t. 3 d d d o s i d d\| _ NPN EPOXY - SW ITCHING A N D G ENERAL PURPOSE	OCR Scan	CBR10 CBR25Ser/es CBR12 CBR30 O-105 O-106	PDF

T4 3570 Abstract: transistor t4 3570 2N2712 transistor 2n2712 2N2711 2N2713 2N3900 2N2646 2N3405 n3860 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 T4 3570 transistor t4 3570 transistor 2n2712 2N3900 2N2646 2N3405 n3860	PDF
2N3643 TO-105 Abstract: 2N3566 2N3569 2N5129 2N3642 2N4140 2N4437 2N3643 2N4436 2N6136 Contextual Info: T 1989963 "CENTRAL SEMICONDUCTOR 61C 00210 TËT\| 1l i m b 3 QDD0210 D \| L .1 NPN EPOXY - SW ITCHING A N D G EN ER A L PURPOSE VCB VCE V EB h FE at *C V V V min max mA 2N2711 2N2712 2N2713 2N 2714 2N2923 18 18 18 18 25 18 18 18 18 25 5 5 5 5 5 30 75 30 75 90	OCR Scan	QDD0210 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926 2N3392 CBR30 2N3643 TO-105 2N3566 2N3569 2N5129 2N3642 2N4140 2N4437 2N3643 2N4436 2N6136	PDF
2N3856 Abstract: 2N3403 2N4256 2N3405 2N4425 2N4424 2N2926 029e1 2N5356 2N6000 Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA PNP NPN pn p GET3014 GET3S3B GET3638A GET3638 GET3638A	OCR Scan	50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N3856 2N3403 2N4256 2N3405 2N4425 2N4424 2N2926 029e1 2N5356 2N6000	PDF
2n2926 transistor Abstract: TRANSISTOR 2n3901 2N2926 NPN high power transistor beta transistor 150 2N3404 2N2711 2n3877 transistor 2N2714 2N2923 Contextual Info: SILICON S IG N A L TR A N S IS T O R S G E N E R A L PURPOSE A M PLIFIER S TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (SA T ) hF E Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2n2926 transistor TRANSISTOR 2n3901 NPN high power transistor beta transistor 150 2N3404 2n3877 transistor	PDF
2N3404 Abstract: 2N4425 GES5815-J1 GES6220-J1 2N3402 2N3403 2N3404 NPN 2N3405 HS5306 HS3402 Contextual Info: Small Signal Transistors TO-92HS Case PD @ TA=25oC =1.0 Watt TYPE NO. POLARITY BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (nA) MIN MIN MIN MAX hFE (V) MIN MAX @ IC VCE VCE (SAT) @ IC (mA) (V) (V) (mA) MAX Cob fT NF (pF) (MHz) (dB) MAX MIN MAX LEAD CODE 2N3402	Original	O-92HS 2N3402 2N3403 2N3404 2N3405 GES6218-J1 GES6219-J1 GES6220-J1 GES6221-J1 2N3404 2N4425 GES5815-J1 GES6220-J1 2N3402 2N3403 2N3404 NPN 2N3405 HS5306 HS3402	PDF
2N3404 Abstract: 2N4425 2n3403 Contextual Info: Small Signal Transistors TO-92HS Case PD @ TA=25oC =1.0 Watt TYPE NO. POLARITY BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (nA) MIN MIN MIN MAX hFE (V) MIN MAX @ IC VCE VCE (SAT) @ IC (mA) (V) (V) (mA) MAX Cob fT NF (pF) (MHz) (dB) MAX MIN MAX LEAD CODE 2N3402	Original	O-92HS 2N3402 2N3403 2N3404 2N3405 2N4425 HS3402 HS3403 HS3404 HS3405	PDF
2N4425 Contextual Info: Small signal Transistors TO-92HS Case P q @ T q =250C =1 .OWatt TYPE NO. p o l a r it y b v c b o b v c e 0 e v EBO «CBD >vCBO (V) 00 <V) (nA) MIN MW ium MAX » lC h FE e v CÊ VCE(SA T) ® fC C0\|, *t NF LEAD CODE (V) (mA) MIN MAX 00 (V) (mA) MAX <pF> (MHz)	OCR Scan	O-92HS 2N3402 2N3403 2N3404 2N3405 2N4425 HS3402 HS3403 HS3404 HS3405	PDF
n3860 Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO- 98 P A C KA GE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 n3860	PDF
2N2713 Abstract: 2N2714 2N2926 equivalent 2n2714 transistor 2N3404 2N2924 2N3391 equivalent 2N3392 equivalent NPN/2n2714 transistor 2N2712 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N2926 equivalent 2n2714 transistor 2N3404 2N3391 equivalent 2N3392 equivalent NPN/2n2714 transistor	PDF
2N3877 Abstract: 2n3877a GES6220 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3877 2n3877a GES6220	PDF

2N3404 NPN Search Results

2N3404 NPN Result Highlights (5)

2N3404 NPN Datasheets Context Search

2n3404

2N3402

2N4425

2N3405

2N2924

n3860

2N2925

BSY44

T092A

2N3643 TO-105

T4 3570

2N3643 TO-105

2N3856

2n2926 transistor

2N3404

2N3404

2N4425

n3860

2N2713

2N3877