T092A Search Results

Contextual Info: MICRO CASE T0-92A THE 2N4400, 2N4401 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N4402 AND 2N4403 RESPECTIVELY. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage

2N3904

Abstract: 2N39Q4 2N3906 2N39 2N3903 2N3905 tr 2n3904 2N3904 hfe
Contextual Info: NPN SILICON PUNAR EPITAXIAL TRANSISTORS :» I CASE T0-92A 2N3903, 2N3904 are NPN silicon planar epitaxial transistors designed for general purpose switching and amplifier applications. They are complementary to PNP types 2N3905 and 2N3906. EBC ABSOLUTE MAXIMUM RATINGS

Contextual Info: 2N3905 2N3906 PNP SILICON PLANAR EPITAXIAL TRANSI STOBS THE 2N3905 AND 2N3906 ABE PNP SILICON PLANAR EPITAXIAL TRANSISTORS. THEY ARE INTENDED FOR GENERAL PURPOSE, SATUHATEDSWITCHING AND AMPLIFIER APPLICATIONS. THEY ARE COMPLIMENTARY TO 2N3903 AND 2N3904 RESPECTIVELY.

HT3820B

Abstract: ding-dong CMOS one shot HT3820U HT3820K HT3820J DING DONG BELL hey Jude HT3820 HT3820C
Contextual Info: H O LTEK r y ^ HT3820 128 Note Melody Generator Features • • • • • • E x trem ely few e x tern al com ponents • D rive a n 8 Q.sp eak er th ro u g h a n N P N tra n s is to r • 3-pin TO -92 or 16 D IP/SO P package W orking voltage: 2.4V~5.0V

3906 pnp

Abstract: 2N3903 2N3904 2N3905 2N3906 BOX69477 2N3906 MICRO ELECTRONICS E3040
Contextual Info: Vj.sl 2N3905 'i i /• 2N 3906 PNP SILICON PLANAR EPITAXIAL TRáNSISTOBS . » . . * •••• . • s . . . . . k. . V . ’ V • . t, *. . i . •• . . . . . . <y -

2N2905

Abstract: PN2905
Contextual Info: K+}:'*<>> , r . < - . • ; . > V " A • ' ' * • : - v s v . - . : < .''a " ; ^ ^ j. v : *>'%'•.• * \ V ; •-., * '\*.^''*v • ^ ¿ k \ !>v^ ’ jr* 2N/PN2905 . . '- s j V ' » « ^ / s V ^ s i S i - ^ v V - - ; - ' l i A - ^ A s V ’ -'V. V .r '

2n3053 complementary

Abstract: 2N3053 2N4037 PN3053 PN4037
Contextual Info: 2N/PN3053 2N/PN4037 COMPLEMENTARY SILICON TRANSISTORS T0-92A TO-39 2N/PN3053 NPN & 2N/PN4037(PNP) are complementary silicon planar epitaxial transistors for use in AF medium power drivers and outputs, as well as for switching applications. C E B 2N3053 2NÌ037

bc1078

Abstract: BC317 BC167 BC1O7 BCI69 BC168 bc108 cbe BC257 bc2378 T0-92A
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

2N2905

Abstract: PN2905 T0-92A
Contextual Info: 2N/PN2905 PNP SILICON TRANSISTORS transistors. stage of power It is intended amplifiers for and PN29Q5 T0-92A 2N2905 TO-39 2N/PN2905 are PNF silicon planar epitaxial ~ driver switching applications. EBC ABSOLUTE MAXIMUM RATINGS 2N2905 PN2905 Collector-Base Voltage

2N2712

Abstract: 2n2923 2N2711 MPS6573 ps/MPS+2515 2N2925 transistor 2n2712
Contextual Info: CRO M PS/2N6573 thru' 6576 and similar types NPN SILICON TRANSISTOR DESCRIPTION T he above types are N P N silico n planar epitaxial transistors for use in A F sm all am plifiers and direct coupled circu its. T h eir m axim um po w er dissipation = I6O111W at T a = 2 5 ° C .

2N3405

Abstract: transistors equivalent AP 3706 P mps3702 MPS3704 equivalent T0-92B transistors mps3704 2N3404 2n3402
Contextual Info: 2N3702 trough 2N 3706 MPS 3702 through MPS 3706 I PNP . NPN SILICON GENERAL PURPOSE AP TRANSISTORS THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AP MEDIUM POWER APPLICATIONS. THE 2N3702 SERIES ARE SUPPLIED IN CASE TO-92B. THE MPS3702 SERIES ARE SUPPLIED IN

MMP-4A

Abstract: MM1180 MM1181
Contextual Info: 低ノイズ低飽和 3 端子レギュレータ MM1180, 1181 MITSUMI 低ノイズ低飽和 3 端子レギュレータ Monolithic IC MM1180, 1181 概要 本ICは低入力電圧の時の無効電流を低減させ、かつ、出力電流40mAでの入出力電圧差を0.2Vと小さくし

Contextual Info: í w MPS 6512 thru’ MPS 6515 r NPN SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6512 th ru1 MPS6515 are NPN silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. EBC ABSOLUTE MAXIMUM RATINGS

Contextual Info: MPS 6 5 3 0 through MPS 6535 COMPLEMENTARY SILICON GENERAL PURPOSE AMPLIFIERS & SWITCHES CASÉ T0-92A THE MPS653 O THROUGH MPSÔ535 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE .AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS UP TO 600mA

2sc 9015

Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
Contextual Info: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K

2N2901

Abstract: npn 2907a EBC 2N2907 PN2907A FN2907 PH2907 2N2222 2N2907A LB-15N PN2907
Contextual Info: CRO 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,

MPS6516

Abstract: MPS6519 MPS6517 MPS6518 E3060
Contextual Info: MPS 6516 thru’ MPS 6519 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6516 thru' MPS6519 are PNP silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. ebc ABSOLUTE MAXIMUM RATINGS

2n508

Abstract: 2N5086 2N5088 2N5089 2N5087 2N5089 power
Contextual Info: 2N5086 2N5088 2N5087 2N 5089 PHP . NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS -%. -C•-'■!■- -% Jy , I CASE T0-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN ÂP LOW NOISE PREAMPLIFIER CIRCUITS.

2n2711

Abstract: 2N2924 2n3394 2N3397 2N2925 transistor 2n3391 2N3396 TRANSISTOR MPS 2N2923 2N2716
Contextual Info: MPS/2N6573 thru' 6576 and similar types NPN SILICON TRANSISTOR DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in A F small amplifiers and direct coupled circuits. Their maximum power I6O111W at Ta = 25°C . dissipation CASE T0-92A

2N2907

Abstract: 2N2907A PN2907 PN2907A pn2222 2n2222 2N2222 2N2222A PN2222 PN2222A pn2907 2n2907
Contextual Info: 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE T0-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY.

BC519

Abstract: fbc237 BC317 BC167 bc107-108-109 BC313 BC320 BC107 BC237 complementary BC238
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

T0-92B

Abstract: transistors equivalent 2N3702 2N3404 2N5450 MPS3704 equivalent 2N5355 2n EQUIVALENT MPS3702 2N5221 equivalent
Contextual Info: 2N3702 MPS 3702 2 N 3706 MPS 3706 rough through PNP . KPN SILICON GENERAL PURPOSE AF TRANSISTORS • i . VT. r 4 - - T f " 7 • ! ‘ T- • • ^-y-XV" -ai. ^ V — r ^ - T K ; •‘ ’V ’ '' M . A I J" CASE T0-92B THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL

1N3904

Abstract: 2N3903 2N3904 2N3906 2N3906/1N3904
Contextual Info: NPN SILICON PLANAR EPITAXIAL TRANSISTORS \ ^ ' r ï y ^ ï Ÿ . . . . . CASE T0-92A 2N3903, 2N3904 are NPN silicon planar epitaxial transistors designed for general purpose switching and amplifier applications. They are complementary to PNP types 2N3905 and 2N3906.

2N2907

Abstract: PN2907 PN2907A J 2N2907 2N2222 2N2222A 2N2907A PN2222 PN2222A PNP pN2907
Contextual Info: CASE TO-18 CASE T0-92A CBE EBC 2N2907 2N2907A PN2907 PN2907A THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,