2N3507 JAN Search Results

2N3507

Contextual Info: Data Sheet No. 2N3507 Generic Part Number: 2N3507 Type 2N3507 Geometry 1506 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/349 Features: • General-purpose silicon transistor for switching and amplifier applications. • Housed in TO-39 case. •

2n3507

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2N3506 MOTOROLA

Abstract: 2N3507 2N3506 2N3507 JAN IN MOTOROLA 2N3507 JAN MHP-F
Contextual Info: MOTOROLA SC XSTRS/R F b3fc,7SS4 aüöfc.342 3 | D | T-3&H 2N3506 2N3507 M A X I M U M R A T IN G S ' Sym bol 2N3S06 2N3507 Unit VCEO 40 50 Vdc JAN, JTX, JTXV AVAILABLE Collector-Base Voltage VCBO 60 80 Vdc CASE 79-04, STYLE 1 Emitter-Base Voltage Veb o S.O

Contextual Info: 2N3507 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3507J • JANTX level (2N3507JX)

Contextual Info: 2N3507 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3507J • JANTX level (2N3507JX)

Contextual Info: 2N3507 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3507J

2N3507

Abstract: 2N3507J 2N3507JS 2N3507JV 2N3507JX 2N3507 JAN
Contextual Info: 2N3507 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3507J

2N3507

Abstract: 2N3507J 2N3507JS 2N3507JV 2N3507JX
Contextual Info: 2N3507 Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3507J • JANTX level (2N3507JX)

2N3507

Contextual Info: 2N3507 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N3507 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N3507+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)50 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3507+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)50 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3507+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)50 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3507 equivalent

Abstract: 2N3506 2N3507
Contextual Info: 2N3506 thru 2N3507A Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature

2N3507

Abstract: 2N3506 2N3506A 2N3506AL 2N3506L 2N3507A 2N3507L 2N3507 equivalent
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 25 November 2009. MIL-PRF-19500/349H 25 August 2009 SUPERSEDING MIL-PRF-19500/349G 1 August 2006 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING,

2N3506

Abstract: 2N3506A 2N3506AL 2N3506L 2N3507 2N3507A 2N3507AL 2N3507L
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 November 2000. INCH-POUND MIL-PRF-19500/349E 28 August 2000 SUPERSEDING MIL-PRF-19500/349D 12 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING

2N3016

Abstract: 2N3419 TO61 package 2N2891 2N2892 2N2893 2N2984 2N2985 2N2986 2N3017
Contextual Info: _10 a u l i i E LE C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES—Continued Case 2N2891 2N2892 TO-5 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO-5 STUD TO61/1 TO-5 TO-5 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418

Contextual Info: BIPOLAR NPN PLAN AR POW ER T R A N SIST O R S PACKAGE T0-205 TO-5 4 J1I DEVICE TYPE b v CEO VOLTS PEAK !C AMPS hFE min/max 'C @ VCE A V VCE (sat) max VOLTS •c @ 'b A A 2N3439* 350 1.0 40-160 .02/10.0 0.5 .05/.004 2N3440* 250 1.0 40-160 .02/10.0 0.5 .05/.004

2n6190

Contextual Info: A POW ERHOUSE BIPOLAR NPN PLANAR POWER T R A N S IS T O R S VOLTS T0-205 1*0-5 111I PEAK *C AMPS min/max hFE LU bvceo O > > DEVICE TYPE _o < PACKAGE VCE (sat) max VOLTS !C @ *B A A 2N3439* 350 1.0 40-160 .02/ 10.0 0.5 .05 /. 004 2N3440* 250 1.0 40-160 .02/ 10.0

2N3016

Abstract: TO61 package TO111 package 2N3419 2N2891 2N2892 2N2893 2N2984 2N2985 2N2986
Contextual Info: _10 a u l i i E L E C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No Case 2N2891 2N2892 TO-5 TO111 TO- 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418 2N3419 JAN 2N3419 JTX 2N3419 JTXV

2N2891

Abstract: 2N3016 2N3419
Contextual Info: _10 a u l i i E L E C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued D evice No Case 2N2891 2N2892 TO-5 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO-5 STUD TO61/1 TO-5 TO-5 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX

Contextual Info: tt < mà o & PACKAGE TO-204 TO-3 D E V IC I TYPE BV«0 VO LTS 'C AM PS 2N5741 60 20.0 20-80 10.0/5.0 1.5 10.0/1.0 2N5742 100 20.0 20-80 10.0/5.0 1.5 10.0/1.0 2N6246 60 15.0 20-100 7.0/5.0 2.5 15.0/1.5 2N6247 80 15.0 20-100 6.0/5.0 3.5 15.0/1.5 k @ VC! hf l

Contextual Info: 2N3506L thru 2N3507AL Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature

motorola 2N2270

Abstract: 2N5861 MOTOROLA
Contextual Info: MOTOROLA SC ÎXSTRS/R F} D E | b 3 b 7 a 5 4 DD?b707 D Small-Signal Metal Transistors Selector Guide Errata s< This errata provides the missing page number references for the device index appearing on Page 2. Device Index Also Available In Specification Levels: