2N3637 JAN Search Results

2N3635

Abstract: 2N3634 2N3637 2n3637 data 2N3636 2N3636 transistor 2N3637 JAN 2N3634L 2N3635L 2N3636L
Contextual Info: TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L Qualified Level JAN JANTX JANTXV JANS 2N3637 2N3637L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

2N3634

Abstract: 2N3635 JAN 2N3637 2N3635
Contextual Info: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Product Preview Low Power Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C unless otherwise noted

Contextual Info: TECHNICAL DATA 2N3634/ L, JTX, JTXV, JANS 2N3635/ L, JTX, JTXV, JANS 2N3636/ L, JTX, JTXV, JANS 2N3637/ L, JTX, JTXV, JANS MIL-PRF QML DEVICES Processed per MIL-PRF-19500/357 PNP SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Ratings Symbol S2N3634, L S2N3636, L Unit

2n3637

Contextual Info: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted

2N3635

Abstract: 2n3634
Contextual Info: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted

2n3637

Abstract: 2N3636 2N3635 2N3634
Contextual Info: TECHNICAL DATA 2N3634, 2N3634L JTX, JTXV 2N3635, 2N3635L JTX, JTXV 2N3636, 2N3636L JTX, JTXV 2N3637, 2N3637L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/357 PNP SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

2N1132A

Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743

2N4033

Abstract: 2N3494 2N5415
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637

Contextual Info: 2 N 3634 THRU 2N3637 HIGH VOLTAGE PNP SILICON TRANSISTORS GEOMETRY 400 • JAN. JAN-TX. JAN-TXV Available TJgTTVSTTage— to 175 • Sw itching and A m plifier A pplications MAXIMUM RATINGS S ym bol * * in g C o O c lo r E m ilia« V o i» « » wc e o vc»

Contextual Info: 2N3637+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)175 V(BR)CBO (V)175 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3834

Abstract: id9e
Contextual Info: T É L E » Y NE COMPO NENTS" Û T l T b ü a O Q Q b S a ? t. aöE D 2N3634 THRU 2N3637 HIGH VOLTAGE PNP SILICON TRANSISTORS O GEOMETRY 480 • JAN, JAN-TX, JAN-TXV Available • High Voltage— to 175 V. VCE0 • Switching and Amplifier Applications MAXIMUM RATINGS

Contextual Info: 2N3637+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)175 V(BR)CBO (V)175 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3637+JANS Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)175 V(BR)CBO (V)175 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3637+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)175 V(BR)CBO (V)175 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3634 MOTOROLA

Abstract: m21 transistor 2N3634 2N3637 transistor m21 MIL-19500 2N3634JTX 2N3635 2N3635JTX 2N3636
Contextual Info: MOTOROU Orderth18 document by2N3WWD SEMICONDUCTOR TECHNICAL DATA o 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, JTXV JTXV, JANS JTXV, JANS JTXV, JANS Processed per MIL+-19500/357 PNP Silicon SmallSignal o General-Purpose Transistor Ic Collector Current,Maimurn

2N3636 transistor

Abstract: 2N3635 10VDC 2N3637UB 2N3637 2N3636 2N3634 2n3635ub 50krads 2N363
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L

10VDC

Abstract: 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637UB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON SWITCHING TRANSISTOR

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L

2N3637UB

Abstract: 2N3634UB 2N3634 2N3637 10VDC 2n3637 data 2N3634L 2N3635 2N3635L 2N3636
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON SWITCHING TRANSISTOR

2N3634

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 6 August 2013. MIL-PRF-19500/357M 6 May 2013 SUPERSEDING MIL-PRF-19500/357L 17 July 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER,

2N3635

Abstract: 2N3637UB 2N3634 JANTX 2N3634UB 2N3636 2n3635ub 2N3637 10VDC 2N3634 2N3634L
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L 2N3634UB 2N3635 2N3635L

MIL-PRF-19500

Abstract: 2N4033 2N3055 2N5038 JANS 2n2222au MIL-PRF-19500/336 MIL-PRF-19500/2n7588 MIL-PRF-19500/391 mil-prf-19500/JANTXV2N6341 2N5415
Contextual Info: New England Semiconductor Announces Its Certified Mil-Prf-19500 JANS Program. JANS Qualification Lots In Process By Family Mil-Prf-19500/251 -2N2219 Mil-Prf-19500/291 -2N2907A Mil-Prf-19500/455 -2N5665 Mil-Prf-19500/251 -2N2219A Mil-Prf-19500/291 -2N2907AUA

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index