2N3810 DIE Search Results

2N3810

Abstract: 2N3810A IC-100A IC100A
Contextual Info: 2N3810 2N3810A DUAL PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3810 and 2N3810A types are dual PNP silicon transistors manufactured by the epitaxil planar process utilizing two individual chips mounted in a

Contextual Info: 2N3810 2N3810A SILICON DUAL PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3810 and 2N3810A are dual silicon PNP transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed

2n3810

Abstract: 2N3799 2N3811 2N2605 2N3789 2N3798 2n3810 datasheet 2C2605 2N2604
Contextual Info: Data Sheet No. 2C2605 Generic Packaged Parts: Chip Type 2C2605 Geometry 0220 Polarity NPN 2N2604, 2N2605, 2N3798, 2N3799, 2N3810, 2N3811 Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high

Contextual Info: 2N3810 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Matched Dual transistors • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3810J • JANTX level (2N3810JX)

2N3810 JANS

Contextual Info: 2N3810 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Matched Dual transistors • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3810J • JANTX level (2N3810JX)

2N3810

Abstract: 2N3810J 2N3810JS 2N3810JV 2N3810JX 2N3810 DIE
Contextual Info: 2N3810 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Matched Dual transistors • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3810J • JANTX level (2N3810JX)

2N3807

Abstract: 2N3806 2N3808 2N3806A 2N3811 JANTX K/2N3806
Contextual Info: 2N3806,A thru 2N3809,A 2N3810*,A 2N3811*,A *also available as JAN, JANTX, JANTXV PNP SILICON DUAL AMPLIFIER TRANSISTOR RATINGS Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage Collector C u rren t - Continuous SYMBOL ^CEO ^CBO ^EBO Ic

2N3810

Abstract: 2N3806 2n3808 LTADC 2N3811A 2N3807 2n3811 2N3810A 2n3806 transistor
Contextual Info: 2N3806 thru 2N3810,A 2N3811,A SOLID STATE INC 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com MAXIMUM RATINGS Rating Sym bol Value U n it Collector-Em itter Voltage v CE0 60 Vdc Collector-Base Voltage VcBO 60 Vdc Emitter-Base Voltage vebo

2N3810

Abstract: 2N3810L 2N3810U 2N3811 2N3811L 2N3811U 2N3810 JANTXV 2N3811 JANTX
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 1 July 2009. INCH-POUND MIL-PRF-19500/336K w/AMENDMENT 1 1 April 2009 SUPERSEDING MIL-PRF-19500/336K 25 April 2008 PERFORMANCE SPECIFICATION SHEET

2n3810

Abstract: 2n3811 2n3808
Contextual Info: MOTOROLA SC 1EE D I b3b?2S4 000ti37fc> I | XSTRS/R F 2N3806, A - a 4? - * ? thru 2N3811, A CASE 654-07, STYLE 1 Collector 1 7 Collector M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage

2N3810

Abstract: N3810 n3811 2N3811
Contextual Info: 2N 3810 CRYSTALONCS 2805 Veterans Highway Suite 14 2N3811 PNP Silicon Dual Small-Signal Transistors . Ronkonkoma, N.Y. 11773 d e sig n e d for g e n e ra l-p u rp o s e a m p lifie r a p p lica tio ns. M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage

2N3726

Abstract: 2N2453 2N3806 2N2919A 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE (V) @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % 2N2060 NPN AMPL/SWITCH 500

2n2453

Contextual Info: Dual Transistors TO-78 Case P q @ T/\=25°C=600m W Total Both Die Equal Power DESCRIPTION " TYPE NO. I v CBO VCEO (V) 00 h =E @ lc <mA) @ V cE (V) v c e (s ; I T ) (V) 'C (mA) h (MHz) I *TYP MIN MAT<; h in g h FE v Be MIN MIN MIN MAX NPN AMPL/SWITCH 500

N248

Abstract: 2N2453 2N3726 2N3806 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2639
Contextual Info: Dual Transistors TO-78 Case P q @ T/^=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c (mA) v CBO VCEO (V) (V) h =E @ lc @ Vce <mA) (V) VCE(S/kT) >C (V) (mA) *T (MHz) *TYP MIN MAT«IH IN G h FE VBE MAX MIN MAX 500 100 50 150 10 5.0 MAX

2N3806

Abstract: 2N2453 2N3726 "low noise" npn 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH

Contextual Info: D a ta S h e e t N o. 2 C 2 6 0 5 Is L SEMICONDUCTORS Chip Type 2C2605 G e n e ric P a c k a g e d P arts: Geometry 0220 Polarity NPN 2N 26 0 4 , 2N 2 6 0 5 , 2N 3 7 9 8 , 2N 3 7 9 9 , 2 N 3 8 1 0, 2 N 3 8 1 1 1 8 M IL S - Chip type 2C2605 by Semicoa Semi­

MD8003

Abstract: MD7005
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH

2N2453A

Contextual Info: Dual Transistors TO-78 Case PD TA=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c v CBO VCEO (n»A) (V) (V) h|=E @lc @ VCE (mA) (V) MATCHING VCE(SAT )® 'C (mA) M (MHz) h FE VBE % 10 <mV) 5.0 3.0 10 5.0 MAX 1.2 50 *TYP MIN 60 150 10 5.0

MD8002

Abstract: 2n2903
Contextual Info: Dual Transistors TO-78 Case P q @ T ^=2 5°C =6 0 0m W Total Both Die Equal Power TYPE NO. DESCRIPTION «C v CBO v CEO (mA) (V) (V) hl=E IC ® V CE (mA) (V) VCE(SV T ) ® ' C <V) ' MAX (mA) ' % (MHz) MATCHING Hf e V BE *TYP MIN % <">V) MIN MAX NPN AMPL/SWITCH

2n3810 datasheet

Abstract: 2N3806 2N3726 2N2453 2N2453A 2N4016 2n4854 to-78 10 amp npn power transistors 2n2913 2N2060 MD6100
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH

Contextual Info: M A XIM U M RATINGS Symbol MPQ3798 MPQ3799 Unit C o lle cto r-E m itte r Voltage VCEO -4 0 -6 0 Vdc C ollector-Base Voltage VCBO -6 0 Em itter-Base Voltage v EBO - 5 .0 Vdc *C -5 0 m A dc Rating C o lle ctor C u rre n t — C o ntinuous Total Device D issipation

transistors c 2216

Contextual Info: M A X IM U M R A T IN G S Symbol MPQ3798 MPQ3799 Unit C o llector-E m itter Voltage VCEO -4 0 -6 0 Vdc Collector-Base Voltage VCBO - 60 Vdc Em itter-Base Voltage vebo - 5.0 Vdc Rating C ollector C urrent — Continuous Total Device Dissipation in Ta - 25CC|1

8B473

Abstract: 7003AB D7003 2N3810 MOTOROLA 2n3810
Contextual Info: 'MOTOROLA SC Í X S T R S / R FJ 6367254 D i f | b 3 b 7 S S 4 0 0 8 B 473 T MOTOROLA SC 96D 8 2 4 7 3 D _ 7 XSTRS/R F MAXIM UM RATINGS Symbol Value U nit Collector-Emltter Voltage VCEO 40 Vdc Collector-Base Voltage VcBO SO Vdc Emitter-Base Voltage

D7003

Abstract: 2N3810 B 342 Dc MD7003
Contextual Info: MOTOROLA SC XS T R S /R F i pc n B , 15E D I t3b?5Sq QOflbSbl M I MAXIMUM RATINGS • Rating Symbol Value U nit Collector-Emitter Voltage VCEO 40 Vdc Collector*Base Voltage Vc b o 50 Vdc Emitter-Base Voltage vebo 5.0 Vdc 'c 50 mAdc Collector Current — Continuous