2N2060 Search Results

2n2407

Abstract: 2N3907 transistor 2N3907 2N3908 2N4651 INTEX 2N2910 2N3680 2N2453 Programmable unijunction
Contextual Info: IN T E X / SE M IT R Ô N IC S CORP 27E D discrete devices GG002flL> 3 semitron hot line 7^ 7 -• ¿7 37 TOLL FREE NUMBER 800-777-3960 multiple devices dual transistors A Vb e -1— Vb E.2 Breakdown Voltate: (volts) T)fH VcB VCE Veb Min. Max. 2N2060 2N2060A

2N2919

Abstract: 2N2642
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920

2N2223

Abstract: 2N2060 2n2223 transistor 2N2223A 2N2480
Contextual Info: MOTOROLA SC -CXSTRS/R 6367254 ~TL> F> MOTOROLA SC XSTRS/R 96D F Collector-Emitter Voltage 2N2060 Symbol 2N2223.A VCEO 60 Collector-Emitter Voltage VCER 80 Collector-Base Voltage VCBO 100 Emitter-Base Voltage VEBO 7.0 Collector Current — Continuous PD Total Device Dissipation

2N2060M

Contextual Info: Datasheet 2N2060M w g h C h C i i Semiconductor Corp. NPN SILICON DUAL TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JED EC TO-78 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2060M is a silicon NPN dual transistor utilizing two individual chips mounted

Contextual Info: 2N2060+JANS Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)50m

transistor data

Abstract: npn transistor data CHIP transistor 348
Contextual Info: 2N2060 Silicon NPN Transistor Data Sheet Description Applications Semicoa Corporation offers: • Matched, Dual Transistors • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N2060J • JANTX level (2N2060JX)

Transistor 78 L 05

Abstract: 2N2919 130L 2N2903 2N2916
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 / 24 DEVICE TYPE ^CEO sus VOLTS Ic (max) AMPS hpE @ Ic/ ^CE min/max @ mA/V ^CE(sat) @ I q/I b V @ mA/mA /t (MHz) 2N2060 60 0.5 30/90@0.1/5 1.2@50/5 P 15 2N2223 60 0.5 25/150@0.1/5

2M222

Abstract: 2n2223 2N2223A
Contextual Info: TYPES 2N2060, t W l i n . . 2M2223A DUAL N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L - S 721 1678, M A R C H 1972 TW O T R A N S IS T O R S IN O N E P A C K A G E F O R D IF F E R E N T IA L A M P L IF IE R A P P L IC A T IO N S • Medium Power •

*2N2920* LCC

Abstract: 2N2920* LCC 2N2222AUB 2N2907AUB 2N2906AUB
Contextual Info: SURFACE MOUNT CATALOGUE SURFACE MOUNT DEVICES CERAMIC LCC MIL-PRF-19500 QUALIFIED DEVICES SMALL SIGNAL - NPN * SMALL SIGNAL - PNP * 2N2221AUA 2N2222AUA 2N2221AUB 2N2222AUB 2N3700UB 2N2906AUB 2N2907AUB DUAL PACK TRANSISTORS* 2N2060U 2N4854U 2N5793U 2N5794U

N2219

Abstract: 2N2453 2N2243 Hirel 2N1991 2N1937 2N2060 2N2102 2N2192 2N2192A
Contextual Info: 37E D SEtlELAB l t d 6133167 0000013 0 ISMLB 7=27- 0 / T-Jl-Ol Type No. Reliability Polarity Option Package V^e o ic cont hFE@ VCE/*C *T Pd 2N1937 2N1991 2N2060 2N2102 .2N2192 HI-REL SCREEN HI-REL HI-REL HI-REL NPN PNP PNP NPN NPN T063 T039 T077 T039 T039

2N2063A

Abstract: 2N2082 Emihus 2n2007 esr bc63 2N2019 2N2097A 2n2114 2n2079 2n2102 motorola
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC141-S BFW24 BC637 BFS61 2N489S BFX34 C266 C26S 2N1890 2N871 ~~rt:~OS 1S 20 BC44S BC44S-18 BC44S-S 2SC69 MPS-AOS MPS-AOS MPS-AOS PMBTASS ~~:0~~55 -2S 30 2N2060A 2N2060B 2N2SS2 2N2SS2A 2N2980 2N2980 2N2980 BFX99

BC431

Abstract: LOW-POWER SILICON NPN BC445A bcw9 2NS222
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC141-S BFW24 BC637 BFS61 2N489S BFX34 C266 C26S 2N1890 2N871 ~~rt:~OS 1S 20 BC44S BC44S-18 BC44S-S 2SC69 MPS-AOS MPS-AOS MPS-AOS PMBTASS ~~:0~~55 -2S 30 2N2060A 2N2060B 2N2SS2 2N2SS2A 2N2980 2N2980 2N2980 BFX99

2N2060A

Contextual Info: SEME 2N2060A LAB MECHANICAL DATA Dimensions in mm inches DUAL AMPLIFIER TRANSISTOR 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. Small Signal Dual Transistor in a TO–77 Hermetic Package.

2N2937

Abstract: 2N2804
Contextual Info: DIFFERENTIAL AND DUAL AMPLIFIERS Electrical Characteristics @ 25°C One Side Maximum Ratings Type NPN A m bient PD V CE(Sat) @ l c / l B H F E @ *C v EB One Side mW Both Sides mW V CB V CE Volts Volts 2N2060 500 600 100 60 7 30/90 0.1 0.5 2N2060A 500 600

2N2060DCSM

Contextual Info: 2N2060DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

2N3806

Abstract: 2N2453 2N3726 "low noise" npn 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH

2N2060M

Contextual Info: 2N2060M w w w. c e n t r a l s e m i . c o m SILICON DUAL NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2060M is a silicon dual NPN transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.

2N2060

Abstract: 2N2060L 2N206
Contextual Info: TECHNICAL DATA 2N2060 JAN, JTX, JTXV 2N2060L JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/270 UNITIZED DUAL NPN SILICON TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

Contextual Info: INTEX/ SEMITRÔNICS CORP 27E D discrete devices GG002flL> 3 semitron hot line 7^ 7 -• ¿7 37 TOLL FREE NUMBER 800-777-3960 multiple devices dual transistors A Vb e -1— Vb E.2 Breakdown Voltate: (volts) T)fH VcB VCE Veb 2N2060 2N2060A 2N20S0B 2N2223 2H2223A

2n3810 datasheet

Abstract: 2N3806 2N3726 2N2453 2N2453A 2N4016 2n4854 to-78 10 amp npn power transistors 2n2913 2N2060 MD6100
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH

L1201

Abstract: 2N2060J 2N2060JTX small signal transistor
Contextual Info: , MOTOROW Order thie document by 2N2080JWD SEMICONDUCTOR TECHNICAL DATA ● *{iv \ :,+ \ ‘! .,? .>W, : \ .,i. ,: . ~ ,:, , , IIUlp 2N2060JTX, JANS Processed per MIL4-195001270 J ’11. ~1. .8:6 : qo ~ Dual NPN Silicon Smal14ignal Transistor .dasignedfor genera~urpose amptifierap~oations.

2N2060

Abstract: 2N2060L
Contextual Info: TECHNICAL DATA UNITIZED DUAL NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/270 Devices Qualified Level JAN JANTX JANTXV 2N2060 2N2060L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol

npn transistor data

Contextual Info: 2N2060 Silicon NPN Transistor Data Sheet Description Applications Semicoa Corporation offers: • Matched, Dual Transistors • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2060J • JANTX level (2N2060JX)

2N3726

Abstract: 2N2453 2N3806 2N2919A 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE (V) @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % 2N2060 NPN AMPL/SWITCH 500