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    2N3819 TRANSISTOR Search Results

    2N3819 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    2N3819 TRANSISTOR Price and Stock

    NTE Electronics Inc 2N3819

    N-channel RF Amplifier Transistor - 2-20 mA - 25V - TO-92 Package.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N3819 1
    • 1 $2.48
    • 10 $2.48
    • 100 $1.91
    • 1000 $1.61
    • 10000 $1.52
    		Buy Now

    2N3819 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2N3819

    Abstract: 2N3819 2N3819 equivalent 2n3819 transistor 2N3819 fairchild 2n3819 datasheet 2N3819 application N-Channel RF Amplifier
    Text: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor


    Original     		PDF 2N3819 450MHz, transistor 2N3819 2N3819 2N3819 equivalent 2n3819 transistor 2N3819 fairchild 2n3819 datasheet 2N3819 application N-Channel RF Amplifier

    Untitled

    Abstract: No abstract text available
    Text: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor


    Original     		PDF 2N3819 450MHz,

    Untitled

    Abstract: No abstract text available
    Text: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source NPN Epitaxial Silicon Transistor


    Original     		PDF 2N3819 450MHz,

    BC237

    Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
    Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53


    Original     		PDF 1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1

    2n3819 field-effect transistors

    Abstract: MPF102 MMBF-5457 bf245b
    Text: Junctional Field−Effect Transistors JFETs Low−Frequency/Low−Noise Re Yfs @ 1 kHz Re Yos @ 1 kHz mmho Min µmho Max − − − 2N5460 2N5461 2N5462 − − − 3.0 1.0 1.5 1.0 1.5 2.0 3.0 3.0 4.5 MMBF5460LT1 BFR30LT1 BFR31LT1 N−Channel 2N3819 2N5457


    Original     		PDF 2N3819 2N5457 2N5458 BF245A BF245B BF256A 2N5460 2N5461 2N5462 O-226AA, 2n3819 field-effect transistors MPF102 MMBF-5457

    Untitled

    Abstract: No abstract text available
    Text: One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3819 N-Channel RF Amplifier w • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low


    Original     		PDF 2N3819 450MHz, 86MAX

    306-803

    Abstract: 2N3819 application 741 opamp 2N3819 Application Note 2N3819 transistor 2N3819 opamp 741 RS 305-636
    Text: Issued November 1983 J2983 Electronic attenuator Stocknumber 306-803 A silicon monolithic gain controlled A.C. amplifier programmed by an external D.C voltage or resistor. Applications include remote volume controls, speech compressors and expandor circuits. The device is


    Original     		PDF J2983 100mV 2N3819 306-803 2N3819 application 741 opamp 2N3819 Application Note transistor 2N3819 opamp 741 RS 305-636

    306-803

    Abstract: 741 opamp 4.7k Preset 741 op-amp compressor audio use transistor 2N3819 Application Note 400V to 6V DC Regulator transistor 2N3819 opamp 741 audio compressor
    Text: Issued November 1983 002-983 Data Pack J Electronic attenuator Data Sheet RS stock number 306-803 A silicon monolithic gain controlled ac amplifier programmed by an external dc voltage or resistor. Applications include remote volume controls, speech compressors and expander circuits. The device is


    Original     		PDF 20Vdc 100mV 306-803 741 opamp 4.7k Preset 741 op-amp compressor audio use transistor 2N3819 Application Note 400V to 6V DC Regulator transistor 2N3819 opamp 741 audio compressor

    306-803

    Abstract: 4.7k Preset 741 opamp 2N3819 Application Note 1M preset 741 op-amp 2N3819 application audio compressor transistor 2N3819 rs amplifier 741
    Text: Issued March 1997 232-2245 Data Pack J Electronic attenuator Data Sheet RS stock number 306-803 A silicon monolithic gain controlled ac amplifier programmed by an external dc voltage or resistor. Applications include remote volume controls, speech compressors and expander circuits. The device is


    Original     		PDF 20Vdc 100mV 306-803 4.7k Preset 741 opamp 2N3819 Application Note 1M preset 741 op-amp 2N3819 application audio compressor transistor 2N3819 rs amplifier 741

    2N3819

    Abstract: transistor 2N3819 2n3819 transistor J-FET 2N3819
    Text: MIE D PHILIPS INTERNATIONAL D ata sheet status Preliminary specification d a te of issue October 1990 FEATURES • Low cost • Specified at 100 MHz • Automatic insertion package. • 711002b G02b333 0 ■ PHIN 2N3819 T-3S-2S N-channel J-FET PINNING - TO-92


    OCR Scan     		PDF 711002b G02b333 2N3819 MBB081 G02b334 T-35-25 711i0fiBb 005b33b 2N3819 transistor 2N3819 2n3819 transistor J-FET 2N3819

    transistor 2N3819

    Abstract: 2N3819 2N3819 ti 2n3819 transistor J-FET-2N3819 2N3819 data JFET 2N3819 J-FET TRANSISTOR UBB081 philips jfet
    Text: Philips Components Data sheet status Preliminary specification date of issue October 1990 2N3819 N-channel J-FET PINNING - TO-92 FEA T U R E S • Low cost • Specified at 100 M Hz • Automatic insertion package. PIN 1 2 3 DESCRIPTION drain gate source DESCRIPTIO N


    OCR Scan     		PDF 2N3819 UBB081 D035fl44 J-FET-2N3819 transistor 2N3819 2N3819 2N3819 ti 2n3819 transistor J-FET-2N3819 2N3819 data JFET 2N3819 J-FET TRANSISTOR UBB081 philips jfet

    transistor 2N3819

    Abstract: 2N3819 n 3819 2n3819 transistor 2N3819 ti 3819 transistor J-FET philips jfet n-channel JFET J-FET-2N3819
    Text: Philips Com ponents Data sheet status Preliminary specification date of issue October 1990 FEATUR ES • Lo w c o s t • S p e cifie d at 100 M H z • A uto m atic insertion package. 2N3819 N-channel J-FET PINNING - TO-92 PIN 1 2 3 PIN CONFIGURATION DESCRIPTION


    OCR Scan     		PDF 2N3819 J-FET-2N3819 transistor 2N3819 2N3819 n 3819 2n3819 transistor 2N3819 ti 3819 transistor J-FET philips jfet n-channel JFET J-FET-2N3819

    5T3824

    Abstract: ME1600 5T3821 2N3819 Texas Instruments
    Text: TYPE 2N3819 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 6 8 8 0 4 7 , A U G U S T 1 9 6 5 - R E V IS E D M A Y 1968 S IL E C T t F IE L D -E F F E C T T R A N S IS T O R * • For Industrial and Consumer Small-Signal Applications


    OCR Scan     		PDF 2N3819 5T3821 5T3824 ME1600 2N3819 Texas Instruments

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a ta s h e e t s ta tu s P re lim in a ry s p e c ific a t io n d a te o f is s u e O c t o b e r 1990 2N3819 N-channel J-FET PINNING - TO-92 FE A T U R E S • Low cost • Specified at 100 M Hz • Automatic insertion package. PIN 1


    OCR Scan     		PDF 2N3819 bb53T31

    2N3819

    Abstract: transistor 2N3819 philips jfet 2N3819 data 2n3819 transistor "N-Channel JFET" JFET 2N3819 Philips International 00Sb3
    Text: 41E D PHILIPS INTERNATIONAL 711062b 00Sb333 □ M P H I N T-3 ^ 2 5 - S h itin e fîn m n n n A n t« ! D ata sheet status Preliminary specification d ate of issue October 1990 FEATURES • Low cost • Specified at 100 MHz • Automatic insertion package.


    OCR Scan     		PDF 2N3819 7110S2b 00Sb333 T-3S-25' MBB081 711Dfl2b 002b334 711002b 002b33b 2N3819 transistor 2N3819 philips jfet 2N3819 data 2n3819 transistor "N-Channel JFET" JFET 2N3819 Philips International 00Sb3

    2N3820

    Abstract: No abstract text available
    Text: riOTOROLA SC -CDIODES/OPT0 } Type Number Page Number Page Number D-S D-S S-G Power 2N3743 3-105 3-107 3-107 3-100 3-109 3-109 3-111 3-111 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2-6 2-7 2-7 THYRISTORS 2-7 3-105 2N4199 through 2N4206 2-5 3-120 TRANSISTORS


    OCR Scan     		PDF 2N3743 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2N3715 2N3716 2N3820

    2n5248

    Abstract: BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103 BC264A BC264B
    Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS oir Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 Pd (mW) BVGSS (V) min m ai (mmhos) min m i min (mA) BC264A BC264B BC264C BC264D BF246A TO-92DE


    OCR Scan     		PDF BC264A O-92DE BC264B BC264C BC264D BF246A O-92DA 2n5248 BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103

    2n3819

    Abstract: bf245b
    Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. CASE MAXIMUM RATINGS BV css P4 mW (V) loss (mA) min max Y* (nimbos) min max Vcsf««) (V) min max Cte (pF) max (pF) max Cr„ NF (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11+ 1.2+ 1.2+ 1.2+ 1.2+


    OCR Scan     		PDF BC264A BC264B BC264C BC264D BF246A BF246B BF246C BF247A BF247B BF247C 2n3819 bf245b

    2N4303

    Abstract: 2N3437 2n3866 noise 2N5566 2N4039 2N4304 2N4393 uhf vhf amplifier UHF UHF Transistors BF161
    Text: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES


    OCR Scan     		PDF DQD0144 2N3069 2N4038 2N4339 2N3436 2N4039 2N4391 2N3437 2N4091 2N4392 2N4303 2n3866 noise 2N5566 2N4304 2N4393 uhf vhf amplifier UHF UHF Transistors BF161

    T018

    Abstract: t018 transistor 2N4303 2n4304 BF161 UHF UHF Transistors transistor t052 2N4221 transistor 2N4095 uhf transistor amplifier
    Text: diode TR ANS ISTOR CO INC A4 DE I 5 5 4 5 3 5 5 0000144 T \ ^ D1QDE TRdf\l515TQR CQ.,lf\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5863 _ SILICON FIELD EFFECT TRANSISTORS- •N— CHANNEL DEVICES


    OCR Scan     		PDF 2N3069 2N4038 2N4339 2N3436 2N4039 2N4391 2N3437 2N4091 2N4392 2N3686 T018 t018 transistor 2N4303 2n4304 BF161 UHF UHF Transistors transistor t052 2N4221 transistor 2N4095 uhf transistor amplifier

    Untitled

    Abstract: No abstract text available
    Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Pd mW BVGSS (V) min (mA) Yfs mai (mmhos) min m i VGS(oir) Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 min BC264A BC264B BC264C BC264D BF246A TO-92DE


    OCR Scan     		PDF BC264A BC264B BC264C BC264D BF246A O-92DE O-92DA

    TO-92DD

    Abstract: BC264B BC264A BC264C BC264D BF246A BF246B BF246C BF247A BF247B
    Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS ofF Ciss Crss NF (V) max (piO max (PF) max (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11 + 1.2+ 1.2+ 1.2+ 1.2+ 3.5+ 2 2 2 2 Pd (mW) BVGSS (V) min max (mmhos) min


    OCR Scan     		PDF BC264A O-92DE BC264B BC264C T092DE BC264D BF246A O-92DA TO-92DD BF246B BF246C BF247A BF247B

    2N4039

    Abstract: 2N4303 2N4304 t018 transistor T018 2N4417 t071 uhf vhf amplifier 2N4038 2N4221
    Text: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES


    OCR Scan     		PDF DQD0144 2N3069 2N4038 2N4339 2N3436 2N4039 2N4391 2N3437 2N4091 2N4392 2N4303 2N4304 t018 transistor T018 2N4417 t071 uhf vhf amplifier 2N4221

    2N4342

    Abstract: 2N4360 2N5033 2N4343 2N4381 2N5474 2N4303 2n6485 2N4382 2N4039
    Text: 2048352 "DÌÒDÈ fRANSI STÖR 'cÒ INC 840 00137 D r a aaMê 3 sa 000D137 1 -17 r. -DIODE TRANSISTOR CÜ.ÍWC. T PNPTO-66 » i o d e ’ ransis‘ tor co inc 201 689-0400 « T e le x; 139485 • Outside NY & NJ area call T O L L F R E E 800-526-4581 jF A X No. 201-575-5883


    OCR Scan     		PDF PNPTO-66 000D137 J31QDE TRdf\J515T0R 30a/a) 2N3740 2N3766 2N3740A 2N3767 2N3741 2N4342 2N4360 2N5033 2N4343 2N4381 2N5474 2N4303 2n6485 2N4382 2N4039